Fe3GaTe2/Fe3GeTe2范德华异质结构中交换偏置的电气控制

IF 3.6 2区物理与天体物理 Q2 PHYSICS, APPLIED

Applied Physics Letters Pub Date : 2025-01-02 DOI:10.1063/5.0235511

Hongjing Chen, Yuntong Xing, Xia Wang, Guan Wang, Jinsong Wu, Aoyu Zhang, Qinghua Hao, Menghao Cai, Xiaodie Chen, Longde Li, Wenzhanhong Chen, Jun-Bo Han

{"title":"Fe3GaTe2/Fe3GeTe2范德华异质结构中交换偏置的电气控制","authors":"Hongjing Chen, Yuntong Xing, Xia Wang, Guan Wang, Jinsong Wu, Aoyu Zhang, Qinghua Hao, Menghao Cai, Xiaodie Chen, Longde Li, Wenzhanhong Chen, Jun-Bo Han","doi":"10.1063/5.0235511","DOIUrl":null,"url":null,"abstract":"Magnetic heterojunctions with large exchange bias have promising applications in magnetic sensing and data storage. Ferromagnetic/antiferromagnetic (FM/AFM) heterojunctions are often used to generate exchange bias. However, the requirement of thermal manipulation makes controlling exchange bias in FM/AFM heterojunctions inconvenient. Herein, a Fe3GeTe2/Fe3GaTe2 FM/FM heterojunction is constructed to generate large exchange bias and reflected magnetic circular dichroism and magneto-optical Kerr effect techniques are used for the magnetic characterization of the heterojunction. The results show that strong magnetic coupling occurs at the Fe3GeTe2/Fe3GaTe2 interface when the temperature is &lt;80 K. By fixing the spin direction of Fe3GaTe2, large exchange bias can be generated in Fe3GeTe2 because of the magnetic pinning effect. Furthermore, the strength of exchange bias can be manipulated by applying an ultralow current between Fe3GeTe2 and Fe3GaTe2 layers without changing the temperature. These results provide potential ways for generating and manipulating exchange bias in two-dimensional (2D) materials and pave the way for implementing the 2D van der Waals exchange bias effect in spintronic devices.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"15 1","pages":""},"PeriodicalIF":3.6000,"publicationDate":"2025-01-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Electrical control of exchange bias in Fe3GaTe2/Fe3GeTe2 van der Waals heterostructures\",\"authors\":\"Hongjing Chen, Yuntong Xing, Xia Wang, Guan Wang, Jinsong Wu, Aoyu Zhang, Qinghua Hao, Menghao Cai, Xiaodie Chen, Longde Li, Wenzhanhong Chen, Jun-Bo Han\",\"doi\":\"10.1063/5.0235511\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Magnetic heterojunctions with large exchange bias have promising applications in magnetic sensing and data storage. Ferromagnetic/antiferromagnetic (FM/AFM) heterojunctions are often used to generate exchange bias. However, the requirement of thermal manipulation makes controlling exchange bias in FM/AFM heterojunctions inconvenient. Herein, a Fe3GeTe2/Fe3GaTe2 FM/FM heterojunction is constructed to generate large exchange bias and reflected magnetic circular dichroism and magneto-optical Kerr effect techniques are used for the magnetic characterization of the heterojunction. The results show that strong magnetic coupling occurs at the Fe3GeTe2/Fe3GaTe2 interface when the temperature is &lt;80 K. By fixing the spin direction of Fe3GaTe2, large exchange bias can be generated in Fe3GeTe2 because of the magnetic pinning effect. Furthermore, the strength of exchange bias can be manipulated by applying an ultralow current between Fe3GeTe2 and Fe3GaTe2 layers without changing the temperature. These results provide potential ways for generating and manipulating exchange bias in two-dimensional (2D) materials and pave the way for implementing the 2D van der Waals exchange bias effect in spintronic devices.\",\"PeriodicalId\":8094,\"journal\":{\"name\":\"Applied Physics Letters\",\"volume\":\"15 1\",\"pages\":\"\"},\"PeriodicalIF\":3.6000,\"publicationDate\":\"2025-01-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Applied Physics Letters\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1063/5.0235511\",\"RegionNum\":2,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"PHYSICS, APPLIED\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applied Physics Letters","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1063/5.0235511","RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}

引用次数: 0

摘要

具有大交换偏置的磁异质结在磁传感和数据存储方面具有广阔的应用前景。铁磁/反铁磁（FM/AFM）异质结常用于产生交换偏置。然而，由于热操作的要求，使得控制FM/AFM异质结中的交换偏置变得不方便。本文构建了Fe3GeTe2/Fe3GaTe2 FM/FM异质结以产生大交换偏置和反射磁圆二色性，并使用磁光克尔效应技术对异质结进行了磁性表征。结果表明：当温度为80 K时，Fe3GeTe2/Fe3GaTe2界面发生强磁耦合；通过固定Fe3GeTe2的自旋方向，Fe3GeTe2由于磁钉钉效应而产生较大的交换偏置。此外，交换偏置的强度可以通过在Fe3GeTe2和Fe3GaTe2层之间施加超低电流而不改变温度来控制。这些结果为在二维（2D）材料中产生和控制交换偏置提供了潜在的方法，并为在自旋电子器件中实现二维范德华交换偏置效应铺平了道路。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Electrical control of exchange bias in Fe3GaTe2/Fe3GeTe2 van der Waals heterostructures

Magnetic heterojunctions with large exchange bias have promising applications in magnetic sensing and data storage. Ferromagnetic/antiferromagnetic (FM/AFM) heterojunctions are often used to generate exchange bias. However, the requirement of thermal manipulation makes controlling exchange bias in FM/AFM heterojunctions inconvenient. Herein, a Fe3GeTe2/Fe3GaTe2 FM/FM heterojunction is constructed to generate large exchange bias and reflected magnetic circular dichroism and magneto-optical Kerr effect techniques are used for the magnetic characterization of the heterojunction. The results show that strong magnetic coupling occurs at the Fe3GeTe2/Fe3GaTe2 interface when the temperature is <80 K. By fixing the spin direction of Fe3GaTe2, large exchange bias can be generated in Fe3GeTe2 because of the magnetic pinning effect. Furthermore, the strength of exchange bias can be manipulated by applying an ultralow current between Fe3GeTe2 and Fe3GaTe2 layers without changing the temperature. These results provide potential ways for generating and manipulating exchange bias in two-dimensional (2D) materials and pave the way for implementing the 2D van der Waals exchange bias effect in spintronic devices.

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来源期刊

Applied Physics Letters 物理-物理：应用

CiteScore

6.40

自引率

10.00%

发文量

1821

审稿时长

1.6 months

期刊介绍： Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology. In addition to regular articles, the journal also publishes invited Fast Track, Perspectives, and in-depth Editorials which report on cutting-edge areas in applied physics. APL Perspectives are forward-looking invited letters which highlight recent developments or discoveries. Emphasis is placed on very recent developments, potentially disruptive technologies, open questions and possible solutions. They also include a mini-roadmap detailing where the community should direct efforts in order for the phenomena to be viable for application and the challenges associated with meeting that performance threshold. Perspectives are characterized by personal viewpoints and opinions of recognized experts in the field. Fast Track articles are invited original research articles that report results that are particularly novel and important or provide a significant advancement in an emerging field. Because of the urgency and scientific importance of the work, the peer review process is accelerated. If, during the review process, it becomes apparent that the paper does not meet the Fast Track criterion, it is returned to a normal track.