从二维AgTe单层到一维AgTe纳米线:碲浓度调制结构和电子特性的转变。

IF 9.1 2区 材料科学 Q1 CHEMISTRY, PHYSICAL
Yuhang Yang, Gefei Niu, Jianchen Lu, Xi Geng, Ruizhi He, Yong Zhang, Shicheng Li, Yi Zhang, Li Sun, Lei Gao, Jinming Cai
{"title":"从二维AgTe单层到一维AgTe纳米线:碲浓度调制结构和电子特性的转变。","authors":"Yuhang Yang, Gefei Niu, Jianchen Lu, Xi Geng, Ruizhi He, Yong Zhang, Shicheng Li, Yi Zhang, Li Sun, Lei Gao, Jinming Cai","doi":"10.1002/smtd.202402025","DOIUrl":null,"url":null,"abstract":"<p><p>Controllably modulating the structure of transition-metal chalcogenides (TMCs) from 2D to 1D and tuning their electronic properties has drawn particular attention currently due to their remarkable properties and potential applications. In this work, by precisely controlling the chemical concentration of Te atoms, the transformation from the 2D honeycomb AgTe monolayer to high-quality and well-defined 1D AgTe nanowires on the Ag(111) substrate has been successfully achieved. The combination of scanning tunneling microscopy measurements and first-principles calculations has confirmed that the mechanism underlying the entire dimensional transformation lies in the directional movement of Ag atoms in the 2D AgTe monolayer regulated by the concentration of Te atoms. The scanning tunneling spectroscopy results reveal that the bandgap of as-synthesized 1D AgTe nanowires is 0.9 eV. Additionally, between the 2D honeycomb AgTe monolayer and the 1D AgTe nanowires, a 1D well-defined and sharp interface has emerged, with a 1D interface state existing at this interface due to charge accumulation. This work may provide valuable guidance for the preparation of 1D nanowires within TMCs, the exploration of novel physical properties, as well as the development of future quantum devices.</p>","PeriodicalId":229,"journal":{"name":"Small Methods","volume":" ","pages":"e2402025"},"PeriodicalIF":9.1000,"publicationDate":"2024-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"From 2D AgTe Monolayer to 1D AgTe Nanowires: Tellurium Concentration Modulated Structural and Electronic Properties Transformation.\",\"authors\":\"Yuhang Yang, Gefei Niu, Jianchen Lu, Xi Geng, Ruizhi He, Yong Zhang, Shicheng Li, Yi Zhang, Li Sun, Lei Gao, Jinming Cai\",\"doi\":\"10.1002/smtd.202402025\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p><p>Controllably modulating the structure of transition-metal chalcogenides (TMCs) from 2D to 1D and tuning their electronic properties has drawn particular attention currently due to their remarkable properties and potential applications. In this work, by precisely controlling the chemical concentration of Te atoms, the transformation from the 2D honeycomb AgTe monolayer to high-quality and well-defined 1D AgTe nanowires on the Ag(111) substrate has been successfully achieved. The combination of scanning tunneling microscopy measurements and first-principles calculations has confirmed that the mechanism underlying the entire dimensional transformation lies in the directional movement of Ag atoms in the 2D AgTe monolayer regulated by the concentration of Te atoms. The scanning tunneling spectroscopy results reveal that the bandgap of as-synthesized 1D AgTe nanowires is 0.9 eV. Additionally, between the 2D honeycomb AgTe monolayer and the 1D AgTe nanowires, a 1D well-defined and sharp interface has emerged, with a 1D interface state existing at this interface due to charge accumulation. This work may provide valuable guidance for the preparation of 1D nanowires within TMCs, the exploration of novel physical properties, as well as the development of future quantum devices.</p>\",\"PeriodicalId\":229,\"journal\":{\"name\":\"Small Methods\",\"volume\":\" \",\"pages\":\"e2402025\"},\"PeriodicalIF\":9.1000,\"publicationDate\":\"2024-12-31\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Small Methods\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.1002/smtd.202402025\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"CHEMISTRY, PHYSICAL\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Small Methods","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1002/smtd.202402025","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
引用次数: 0

摘要

对过渡金属硫族化合物(TMCs)从二维到一维的结构进行可控调制并对其电子性质进行调谐,由于其显著的性质和潜在的应用前景,目前已引起人们的特别关注。在这项工作中,通过精确控制Te原子的化学浓度,成功地实现了从二维蜂窝状AgTe单层到Ag(111)衬底上高质量和明确定义的1D AgTe纳米线的转变。扫描隧道显微镜测量和第一性原理计算的结合证实了整个维度转变的机制在于受Te原子浓度调节的二维AgTe单层中Ag原子的定向运动。扫描隧道光谱结果表明,合成的一维AgTe纳米线带隙为0.9 eV。此外,在二维蜂窝AgTe单层和一维AgTe纳米线之间,出现了一个清晰的一维界面,该界面由于电荷积累而存在一维界面状态。这项工作可能为tmc内一维纳米线的制备、新物理性质的探索以及未来量子器件的发展提供有价值的指导。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
From 2D AgTe Monolayer to 1D AgTe Nanowires: Tellurium Concentration Modulated Structural and Electronic Properties Transformation.

Controllably modulating the structure of transition-metal chalcogenides (TMCs) from 2D to 1D and tuning their electronic properties has drawn particular attention currently due to their remarkable properties and potential applications. In this work, by precisely controlling the chemical concentration of Te atoms, the transformation from the 2D honeycomb AgTe monolayer to high-quality and well-defined 1D AgTe nanowires on the Ag(111) substrate has been successfully achieved. The combination of scanning tunneling microscopy measurements and first-principles calculations has confirmed that the mechanism underlying the entire dimensional transformation lies in the directional movement of Ag atoms in the 2D AgTe monolayer regulated by the concentration of Te atoms. The scanning tunneling spectroscopy results reveal that the bandgap of as-synthesized 1D AgTe nanowires is 0.9 eV. Additionally, between the 2D honeycomb AgTe monolayer and the 1D AgTe nanowires, a 1D well-defined and sharp interface has emerged, with a 1D interface state existing at this interface due to charge accumulation. This work may provide valuable guidance for the preparation of 1D nanowires within TMCs, the exploration of novel physical properties, as well as the development of future quantum devices.

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来源期刊
Small Methods
Small Methods Materials Science-General Materials Science
CiteScore
17.40
自引率
1.60%
发文量
347
期刊介绍: Small Methods is a multidisciplinary journal that publishes groundbreaking research on methods relevant to nano- and microscale research. It welcomes contributions from the fields of materials science, biomedical science, chemistry, and physics, showcasing the latest advancements in experimental techniques. With a notable 2022 Impact Factor of 12.4 (Journal Citation Reports, Clarivate Analytics, 2023), Small Methods is recognized for its significant impact on the scientific community. The online ISSN for Small Methods is 2366-9608.
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