了解氧诱导反应及其对n型聚合物混合导体基器件的影响。

IF 12.7 1区 化学 Q1 CHEMISTRY, MULTIDISCIPLINARY
ACS Central Science Pub Date : 2024-11-19 eCollection Date: 2024-12-25 DOI:10.1021/acscentsci.4c00654
Prem D Nayak, Büsra Dereli, David Ohayon, Shofarul Wustoni, Tania Cecilia Hidalgo Castillo, Victor Druet, Yazhou Wang, Adel Hama, Craig Combe, Sophie Griggs, Maryam Alsufyani, Rajendar Sheelamanthula, Iain McCulloch, Luigi Cavallo, Sahika Inal
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引用次数: 0

摘要

电子传输(n型)聚合物混合导体是一类令人兴奋的材料,用于具有水电解质界面的器件,如生物电子传感器,致动器和软电荷存储系统。然而,它们的电荷传输性能不如p型,主要是由于电化学副反应,如氧还原反应(ORR)。为了减轻ORR, n型有机半导体设计中的一个常见策略是降低最低未占据分子轨道(LUMO)水平。尽管经验观察表明深LUMO水平、低ORR和水中电化学循环稳定性增强之间存在相关性,但这种关系缺乏强有力的证据。在这项工作中,我们深入研究了不同LUMO水平的n型聚合物混合导体的电化学反应,并评估了ORR对电荷存储性能和有机电化学晶体管(OECT)工作的影响。我们的研究结果揭示了LUMO水平与ORR电流以及薄膜的电化学操作稳定性之间的有限相关性。在固定偏置条件下,ORR电流对OECT通道电流的贡献最小,而在类似电容器的结构中,n型薄膜在浮动电位下迅速自放电。密度泛函理论分析和x射线光电子能谱分析强调了骨架化学在控制o2相关降解途径和器件性能损失方面的关键作用。这些发现强调了ORR在n型半导体设计中所面临的持续挑战,并主张将重点转向探索具有有限O2相互作用的化学部分,以提高n型膜/水界面的操作稳定性和性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Understanding Oxygen-Induced Reactions and Their Impact on n-Type Polymeric Mixed Conductor-Based Devices.

Electron transporting (n-type) polymeric mixed conductors are an exciting class of materials for devices with aqueous electrolyte interfaces, such as bioelectronic sensors, actuators, and soft charge storage systems. However, their charge transport performance falls short of their p-type counterparts, primarily due to electrochemical side reactions such as the oxygen reduction reaction (ORR). To mitigate ORR, a common strategy in n-type organic semiconductor design focuses on lowering the lowest unoccupied molecular orbital (LUMO) level. Despite empirical observations suggesting a correlation between deep LUMO levels, low ORR, and enhanced electrochemical cycling stability in water, this relationship lacks robust evidence. In this work, we delve into the electrochemical reactions of n-type polymeric mixed conductors with varying LUMO levels and assess the impact of ORR on charge storage performance and organic electrochemical transistor (OECT) operation. Our results reveal a limited correlation between LUMO levels and ORR currents, as well as the electrochemical operational stability of the films. While ORR currents minimally contribute to OECT channel currents under fixed biasing conditions, n-type films self-discharge rapidly at floating potentials in a capacitor-like configuration. The density functional theory analysis, complemented by X-ray photoelectron spectroscopy, underscores the critical role of backbone chemistry in controlling O2-related degradation pathways and device performance losses. These findings highlight the persistent challenge posed by ORR in n-type semiconductor design and advocate for shifting the focus toward exploring chemical moieties with limited O2 interactions to enhance operational stability and performance at n-type film/water interfaces.

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来源期刊
ACS Central Science
ACS Central Science Chemical Engineering-General Chemical Engineering
CiteScore
25.50
自引率
0.50%
发文量
194
审稿时长
10 weeks
期刊介绍: ACS Central Science publishes significant primary reports on research in chemistry and allied fields where chemical approaches are pivotal. As the first fully open-access journal by the American Chemical Society, it covers compelling and important contributions to the broad chemistry and scientific community. "Central science," a term popularized nearly 40 years ago, emphasizes chemistry's central role in connecting physical and life sciences, and fundamental sciences with applied disciplines like medicine and engineering. The journal focuses on exceptional quality articles, addressing advances in fundamental chemistry and interdisciplinary research.
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