{"title":"利用克尔效应捕获负折射率材料中的光脉冲","authors":"Dimishree Neog, Abhijeet Das, Subrata Hazarika","doi":"10.1007/s11082-024-07981-5","DOIUrl":null,"url":null,"abstract":"<div><p>Kerr non-linearity can induce epsilon-near-zero material characteristics in negative index material when incident pulse intensity is at its threshold value. Such Kerr induced epsilon-near-zero regime in negative index material, where group velocity approaches zero and phase velocity diverges, is ideal for strong exciton -photon interaction that can lead to the formation of polaritons oscillating between photonic and excitonic states with frequency <span>\\(\\frac{{\\Omega_{R} }}{\\sqrt \\hbar }\\)</span>, <span>\\(\\Omega_{R}\\)</span> being the Rabi frequency. Quantum mechanical analysis using polariton dynamics shows that the optical pulse will be self-trapped in Kerr induced epsilon-near-zero regime and, thereby, suggest that maintaining the intensity of an incident light pulse at the threshold value in negative index material may be an alternative means to trap light, unlike slow light, stopped light or stationary light generated conventionally through electromagnetically induced transparency.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 1","pages":""},"PeriodicalIF":3.3000,"publicationDate":"2024-12-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Trapping of optical pulse in negative index material via Kerr effect\",\"authors\":\"Dimishree Neog, Abhijeet Das, Subrata Hazarika\",\"doi\":\"10.1007/s11082-024-07981-5\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Kerr non-linearity can induce epsilon-near-zero material characteristics in negative index material when incident pulse intensity is at its threshold value. Such Kerr induced epsilon-near-zero regime in negative index material, where group velocity approaches zero and phase velocity diverges, is ideal for strong exciton -photon interaction that can lead to the formation of polaritons oscillating between photonic and excitonic states with frequency <span>\\\\(\\\\frac{{\\\\Omega_{R} }}{\\\\sqrt \\\\hbar }\\\\)</span>, <span>\\\\(\\\\Omega_{R}\\\\)</span> being the Rabi frequency. Quantum mechanical analysis using polariton dynamics shows that the optical pulse will be self-trapped in Kerr induced epsilon-near-zero regime and, thereby, suggest that maintaining the intensity of an incident light pulse at the threshold value in negative index material may be an alternative means to trap light, unlike slow light, stopped light or stationary light generated conventionally through electromagnetically induced transparency.</p></div>\",\"PeriodicalId\":720,\"journal\":{\"name\":\"Optical and Quantum Electronics\",\"volume\":\"57 1\",\"pages\":\"\"},\"PeriodicalIF\":3.3000,\"publicationDate\":\"2024-12-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Optical and Quantum Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s11082-024-07981-5\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Optical and Quantum Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s11082-024-07981-5","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Trapping of optical pulse in negative index material via Kerr effect
Kerr non-linearity can induce epsilon-near-zero material characteristics in negative index material when incident pulse intensity is at its threshold value. Such Kerr induced epsilon-near-zero regime in negative index material, where group velocity approaches zero and phase velocity diverges, is ideal for strong exciton -photon interaction that can lead to the formation of polaritons oscillating between photonic and excitonic states with frequency \(\frac{{\Omega_{R} }}{\sqrt \hbar }\), \(\Omega_{R}\) being the Rabi frequency. Quantum mechanical analysis using polariton dynamics shows that the optical pulse will be self-trapped in Kerr induced epsilon-near-zero regime and, thereby, suggest that maintaining the intensity of an incident light pulse at the threshold value in negative index material may be an alternative means to trap light, unlike slow light, stopped light or stationary light generated conventionally through electromagnetically induced transparency.
期刊介绍:
Optical and Quantum Electronics provides an international forum for the publication of original research papers, tutorial reviews and letters in such fields as optical physics, optical engineering and optoelectronics. Special issues are published on topics of current interest.
Optical and Quantum Electronics is published monthly. It is concerned with the technology and physics of optical systems, components and devices, i.e., with topics such as: optical fibres; semiconductor lasers and LEDs; light detection and imaging devices; nanophotonics; photonic integration and optoelectronic integrated circuits; silicon photonics; displays; optical communications from devices to systems; materials for photonics (e.g. semiconductors, glasses, graphene); the physics and simulation of optical devices and systems; nanotechnologies in photonics (including engineered nano-structures such as photonic crystals, sub-wavelength photonic structures, metamaterials, and plasmonics); advanced quantum and optoelectronic applications (e.g. quantum computing, memory and communications, quantum sensing and quantum dots); photonic sensors and bio-sensors; Terahertz phenomena; non-linear optics and ultrafast phenomena; green photonics.