5 -戊酸碘化铵添加剂对三碘化甲基铵铅钙钛矿薄膜结构和光学性能的影响

IF 3.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
A. M. El-naggar, Anwar Q. Alanazi, A. M. Kamal, Ghaida S. Al hisan, A. M. Aldhafiri, Ahmad A. Alsaleh, Amanullah Fatehmulla, Mohamed Bakr Mohamed
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The optical band gap energy (<i>E</i><sub>g</sub>) value of MAPbI<sub>3</sub> is 1.58 eV. The direct and indirect <i>E</i><sub>g</sub> values of the films became 1.52–1.59 or 1.31–1.49 eV depending on the amount of AVAI on the films, respectively. Various specified models were used to determine the refractive index (<i>n</i>) of different films. The <i>n</i>-average rose from 2.95 (based on direct <i>E</i><sub>g</sub> value) or 2.99 (based on indirect <i>E</i><sub>g</sub>) for the ​ film (x = 0) to 2.98 (based on direct <i>E</i><sub>g</sub> value) or 3.08 (based on indirect <i>E</i><sub>g</sub>) for the film with 15% AVAI. Film with 15% AVAI has the highest dielectric value, while film with 25% AVAI has the maximum dielectric loss value as compared with MAPbI<sub>3</sub> and other dopant ratios. Film with 25% AVAI has the highest optical conductivity value. 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引用次数: 0

摘要

在氩气环境下的手套箱中,采用自旋镀膜方法制备了三碘化铅甲基铵(AVAI)x(MAPbI3)1-x (x = 0,0.05, 0.1, 0.15, 0.25)钙钛矿薄膜。用x射线衍射技术研究了所形成薄膜的结构。探讨了AVAI用量对衍射峰强度的影响。AVAI含量为15%的薄膜具有最高的光学吸光度。在1700 nm范围内,AVAI含量为25%的薄膜比未掺杂的薄膜透光率有所提高,但在1700 nm范围内透光率下降。MAPbI3的光学带隙能(Eg)值为1.58 eV。根据AVAI用量的不同,膜的直接Eg值为1.52 ~ 1.59 eV,间接Eg值为1.31 ~ 1.49 eV。使用各种指定模型来确定不同薄膜的折射率(n)。对于含有15% AVAI的电影,n-平均值从2.95(基于直接Eg值)或2.99(基于间接Eg值)上升到2.98(基于直接Eg值)或3.08(基于间接Eg值)。与MAPbI3及其他掺杂比相比,AVAI含量为15%的薄膜介电值最高,而AVAI含量为25%的薄膜介电损耗值最大。AVAI含量为25%的薄膜具有最高的光学导电性。具有15% AVAI的薄膜在非线性光学(NLO)参数值方面表现出显着的增益,使其成为各种NLO和未来光子应用的合适选择。在532 nm激光激发波长下,研究了不同薄膜的光致发光特性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Influence of 5‑ammonium valeric acid iodide additive on the structural and optical behaviors of methylammonium lead tri-iodide perovskite thin films

Methylammonium lead tri-iodide, (AVAI)x(MAPbI3)1-x (x = 0, 0.05, 0.1, 0.15, 0.25) perovskite thin films were formed using a spin coating method in a glove box beneath an argon environment. The structures of the formed films were investigated using the X-ray diffraction technique. The effect of AVAI amount on the intensity of diffraction peaks was explored. Film with 15% AVAI has the highest optical absorbance. The transmittance of the film 25% AVAI was enhanced as compared with undoped film in the wavelength range up to 1700 nm but it decreased beyond this range. The optical band gap energy (Eg) value of MAPbI3 is 1.58 eV. The direct and indirect Eg values of the films became 1.52–1.59 or 1.31–1.49 eV depending on the amount of AVAI on the films, respectively. Various specified models were used to determine the refractive index (n) of different films. The n-average rose from 2.95 (based on direct Eg value) or 2.99 (based on indirect Eg) for the ​ film (x = 0) to 2.98 (based on direct Eg value) or 3.08 (based on indirect Eg) for the film with 15% AVAI. Film with 15% AVAI has the highest dielectric value, while film with 25% AVAI has the maximum dielectric loss value as compared with MAPbI3 and other dopant ratios. Film with 25% AVAI has the highest optical conductivity value. The film with 15% AVAI showed significant gains in nonlinear optical (NLO) parameter values, making it a suitable option for a variety of NLO and future photonic uses. We studied the photoluminescence features of different films using a 532 nm laser excitation wavelength.

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来源期刊
Optical and Quantum Electronics
Optical and Quantum Electronics 工程技术-工程:电子与电气
CiteScore
4.60
自引率
20.00%
发文量
810
审稿时长
3.8 months
期刊介绍: Optical and Quantum Electronics provides an international forum for the publication of original research papers, tutorial reviews and letters in such fields as optical physics, optical engineering and optoelectronics. Special issues are published on topics of current interest. Optical and Quantum Electronics is published monthly. It is concerned with the technology and physics of optical systems, components and devices, i.e., with topics such as: optical fibres; semiconductor lasers and LEDs; light detection and imaging devices; nanophotonics; photonic integration and optoelectronic integrated circuits; silicon photonics; displays; optical communications from devices to systems; materials for photonics (e.g. semiconductors, glasses, graphene); the physics and simulation of optical devices and systems; nanotechnologies in photonics (including engineered nano-structures such as photonic crystals, sub-wavelength photonic structures, metamaterials, and plasmonics); advanced quantum and optoelectronic applications (e.g. quantum computing, memory and communications, quantum sensing and quantum dots); photonic sensors and bio-sensors; Terahertz phenomena; non-linear optics and ultrafast phenomena; green photonics.
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