A. M. El-naggar, Anwar Q. Alanazi, A. M. Kamal, Ghaida S. Al hisan, A. M. Aldhafiri, Ahmad A. Alsaleh, Amanullah Fatehmulla, Mohamed Bakr Mohamed
{"title":"5 -戊酸碘化铵添加剂对三碘化甲基铵铅钙钛矿薄膜结构和光学性能的影响","authors":"A. M. El-naggar, Anwar Q. Alanazi, A. M. Kamal, Ghaida S. Al hisan, A. M. Aldhafiri, Ahmad A. Alsaleh, Amanullah Fatehmulla, Mohamed Bakr Mohamed","doi":"10.1007/s11082-024-07987-z","DOIUrl":null,"url":null,"abstract":"<div><p>Methylammonium lead tri-iodide, (AVAI)<sub>x</sub>(MAPbI<sub>3</sub>)<sub>1-x</sub> (x = 0, 0.05, 0.1, 0.15, 0.25) perovskite thin films were formed using a spin coating method in a glove box beneath an argon environment. The structures of the formed films were investigated using the X-ray diffraction technique. The effect of AVAI amount on the intensity of diffraction peaks was explored. Film with 15% AVAI has the highest optical absorbance. The transmittance of the film 25% AVAI was enhanced as compared with undoped film in the wavelength range up to 1700 nm but it decreased beyond this range. The optical band gap energy (<i>E</i><sub>g</sub>) value of MAPbI<sub>3</sub> is 1.58 eV. The direct and indirect <i>E</i><sub>g</sub> values of the films became 1.52–1.59 or 1.31–1.49 eV depending on the amount of AVAI on the films, respectively. Various specified models were used to determine the refractive index (<i>n</i>) of different films. The <i>n</i>-average rose from 2.95 (based on direct <i>E</i><sub>g</sub> value) or 2.99 (based on indirect <i>E</i><sub>g</sub>) for the film (x = 0) to 2.98 (based on direct <i>E</i><sub>g</sub> value) or 3.08 (based on indirect <i>E</i><sub>g</sub>) for the film with 15% AVAI. Film with 15% AVAI has the highest dielectric value, while film with 25% AVAI has the maximum dielectric loss value as compared with MAPbI<sub>3</sub> and other dopant ratios. Film with 25% AVAI has the highest optical conductivity value. The film with 15% AVAI showed significant gains in nonlinear optical (NLO) parameter values, making it a suitable option for a variety of NLO and future photonic uses. We studied the photoluminescence features of different films using a 532 nm laser excitation wavelength.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 1","pages":""},"PeriodicalIF":3.3000,"publicationDate":"2024-12-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Influence of 5‑ammonium valeric acid iodide additive on the structural and optical behaviors of methylammonium lead tri-iodide perovskite thin films\",\"authors\":\"A. M. El-naggar, Anwar Q. Alanazi, A. M. Kamal, Ghaida S. Al hisan, A. M. Aldhafiri, Ahmad A. Alsaleh, Amanullah Fatehmulla, Mohamed Bakr Mohamed\",\"doi\":\"10.1007/s11082-024-07987-z\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Methylammonium lead tri-iodide, (AVAI)<sub>x</sub>(MAPbI<sub>3</sub>)<sub>1-x</sub> (x = 0, 0.05, 0.1, 0.15, 0.25) perovskite thin films were formed using a spin coating method in a glove box beneath an argon environment. The structures of the formed films were investigated using the X-ray diffraction technique. The effect of AVAI amount on the intensity of diffraction peaks was explored. Film with 15% AVAI has the highest optical absorbance. The transmittance of the film 25% AVAI was enhanced as compared with undoped film in the wavelength range up to 1700 nm but it decreased beyond this range. The optical band gap energy (<i>E</i><sub>g</sub>) value of MAPbI<sub>3</sub> is 1.58 eV. The direct and indirect <i>E</i><sub>g</sub> values of the films became 1.52–1.59 or 1.31–1.49 eV depending on the amount of AVAI on the films, respectively. Various specified models were used to determine the refractive index (<i>n</i>) of different films. The <i>n</i>-average rose from 2.95 (based on direct <i>E</i><sub>g</sub> value) or 2.99 (based on indirect <i>E</i><sub>g</sub>) for the film (x = 0) to 2.98 (based on direct <i>E</i><sub>g</sub> value) or 3.08 (based on indirect <i>E</i><sub>g</sub>) for the film with 15% AVAI. Film with 15% AVAI has the highest dielectric value, while film with 25% AVAI has the maximum dielectric loss value as compared with MAPbI<sub>3</sub> and other dopant ratios. Film with 25% AVAI has the highest optical conductivity value. The film with 15% AVAI showed significant gains in nonlinear optical (NLO) parameter values, making it a suitable option for a variety of NLO and future photonic uses. 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Influence of 5‑ammonium valeric acid iodide additive on the structural and optical behaviors of methylammonium lead tri-iodide perovskite thin films
Methylammonium lead tri-iodide, (AVAI)x(MAPbI3)1-x (x = 0, 0.05, 0.1, 0.15, 0.25) perovskite thin films were formed using a spin coating method in a glove box beneath an argon environment. The structures of the formed films were investigated using the X-ray diffraction technique. The effect of AVAI amount on the intensity of diffraction peaks was explored. Film with 15% AVAI has the highest optical absorbance. The transmittance of the film 25% AVAI was enhanced as compared with undoped film in the wavelength range up to 1700 nm but it decreased beyond this range. The optical band gap energy (Eg) value of MAPbI3 is 1.58 eV. The direct and indirect Eg values of the films became 1.52–1.59 or 1.31–1.49 eV depending on the amount of AVAI on the films, respectively. Various specified models were used to determine the refractive index (n) of different films. The n-average rose from 2.95 (based on direct Eg value) or 2.99 (based on indirect Eg) for the film (x = 0) to 2.98 (based on direct Eg value) or 3.08 (based on indirect Eg) for the film with 15% AVAI. Film with 15% AVAI has the highest dielectric value, while film with 25% AVAI has the maximum dielectric loss value as compared with MAPbI3 and other dopant ratios. Film with 25% AVAI has the highest optical conductivity value. The film with 15% AVAI showed significant gains in nonlinear optical (NLO) parameter values, making it a suitable option for a variety of NLO and future photonic uses. We studied the photoluminescence features of different films using a 532 nm laser excitation wavelength.
期刊介绍:
Optical and Quantum Electronics provides an international forum for the publication of original research papers, tutorial reviews and letters in such fields as optical physics, optical engineering and optoelectronics. Special issues are published on topics of current interest.
Optical and Quantum Electronics is published monthly. It is concerned with the technology and physics of optical systems, components and devices, i.e., with topics such as: optical fibres; semiconductor lasers and LEDs; light detection and imaging devices; nanophotonics; photonic integration and optoelectronic integrated circuits; silicon photonics; displays; optical communications from devices to systems; materials for photonics (e.g. semiconductors, glasses, graphene); the physics and simulation of optical devices and systems; nanotechnologies in photonics (including engineered nano-structures such as photonic crystals, sub-wavelength photonic structures, metamaterials, and plasmonics); advanced quantum and optoelectronic applications (e.g. quantum computing, memory and communications, quantum sensing and quantum dots); photonic sensors and bio-sensors; Terahertz phenomena; non-linear optics and ultrafast phenomena; green photonics.