{"title":"溶胶-凝胶法制备的超级电容器用NiMn2O4电极的电化学性能","authors":"Raman Duddi, Shivani, Shobhna Dhiman, Arun Kumar Singh, Navpreet Kamboj, Sanjeev Kumar","doi":"10.1007/s10854-024-14113-y","DOIUrl":null,"url":null,"abstract":"<div><p>Here, we report the synthesis of NiMn<sub>2</sub>O<sub>4</sub> nanostructures using sol–gel technique. The synthesized NiMn<sub>2</sub>O<sub>4</sub> electrode material exhibited a high BET surface area ~ 97.4 m<sup>2</sup>/g, contributing significantly to its enhanced electrochemical performance in supercapacitor applications The charge storage capability and cycle stability of the resulting NiMn<sub>2</sub>O<sub>4</sub> nanostructures were investigated using cyclic voltammetry (CV), galvanostatic charge–discharge (GCD), and electrochemical impedance spectroscopy (EIS) in a 1.0 M KOH electrolyte. These electrochemical techniques revealed that the as-prepared NiMn<sub>2</sub>O<sub>4</sub> nanostructures revealed a significantly enhanced specific capacitance of 1270 F g<sup>−1</sup> at a current density of 0.3 A g<sup>−1</sup>, indicating their excellent charge storage performance. Furthermore, the NiMn<sub>2</sub>O<sub>4</sub> electrode demonstrates remarkable cycling stability, retaining 94% of its initial capacitance after 5000 cycles and a coulombic efficiency of 98% at a current density of 0.7 A g<sup>−1</sup>. For supercapacitor application, the NiMn<sub>2</sub>O<sub>4</sub> material delivers a high energy density ~ 47 Wh kg<sup>−1</sup> along with power density ~ 5404 W kg<sup>−1</sup>. The exceptional storage properties of the NiMn<sub>2</sub>O<sub>4</sub> electrode make it an ideal candidate for energy storage applications.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 1","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2024-12-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Enhanced electrochemical performance of NiMn2O4 electrode synthesized via sol–gel technique for supercapacitor applications\",\"authors\":\"Raman Duddi, Shivani, Shobhna Dhiman, Arun Kumar Singh, Navpreet Kamboj, Sanjeev Kumar\",\"doi\":\"10.1007/s10854-024-14113-y\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Here, we report the synthesis of NiMn<sub>2</sub>O<sub>4</sub> nanostructures using sol–gel technique. The synthesized NiMn<sub>2</sub>O<sub>4</sub> electrode material exhibited a high BET surface area ~ 97.4 m<sup>2</sup>/g, contributing significantly to its enhanced electrochemical performance in supercapacitor applications The charge storage capability and cycle stability of the resulting NiMn<sub>2</sub>O<sub>4</sub> nanostructures were investigated using cyclic voltammetry (CV), galvanostatic charge–discharge (GCD), and electrochemical impedance spectroscopy (EIS) in a 1.0 M KOH electrolyte. These electrochemical techniques revealed that the as-prepared NiMn<sub>2</sub>O<sub>4</sub> nanostructures revealed a significantly enhanced specific capacitance of 1270 F g<sup>−1</sup> at a current density of 0.3 A g<sup>−1</sup>, indicating their excellent charge storage performance. Furthermore, the NiMn<sub>2</sub>O<sub>4</sub> electrode demonstrates remarkable cycling stability, retaining 94% of its initial capacitance after 5000 cycles and a coulombic efficiency of 98% at a current density of 0.7 A g<sup>−1</sup>. For supercapacitor application, the NiMn<sub>2</sub>O<sub>4</sub> material delivers a high energy density ~ 47 Wh kg<sup>−1</sup> along with power density ~ 5404 W kg<sup>−1</sup>. 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引用次数: 0
摘要
本文报道了溶胶-凝胶法制备NiMn2O4纳米结构。采用循环伏安法(CV)、恒流充放电法(GCD)和电化学阻抗谱法(EIS)在1.0 M KOH电解液中研究了所制备的纳米结构的电荷存储能力和循环稳定性。这些电化学技术表明,在0.3 ag−1电流密度下,制备的NiMn2O4纳米结构的比电容显著增强,达到1270 F g−1,表明其具有优异的电荷存储性能。此外,NiMn2O4电极表现出显著的循环稳定性,在5000次循环后保持94%的初始电容,在0.7 a g−1电流密度下库仑效率为98%。对于超级电容器的应用,NiMn2O4材料提供了高能量密度~ 47 Wh kg - 1和功率密度~ 5404 W kg - 1。NiMn2O4电极优异的存储性能使其成为储能应用的理想候选者。
Enhanced electrochemical performance of NiMn2O4 electrode synthesized via sol–gel technique for supercapacitor applications
Here, we report the synthesis of NiMn2O4 nanostructures using sol–gel technique. The synthesized NiMn2O4 electrode material exhibited a high BET surface area ~ 97.4 m2/g, contributing significantly to its enhanced electrochemical performance in supercapacitor applications The charge storage capability and cycle stability of the resulting NiMn2O4 nanostructures were investigated using cyclic voltammetry (CV), galvanostatic charge–discharge (GCD), and electrochemical impedance spectroscopy (EIS) in a 1.0 M KOH electrolyte. These electrochemical techniques revealed that the as-prepared NiMn2O4 nanostructures revealed a significantly enhanced specific capacitance of 1270 F g−1 at a current density of 0.3 A g−1, indicating their excellent charge storage performance. Furthermore, the NiMn2O4 electrode demonstrates remarkable cycling stability, retaining 94% of its initial capacitance after 5000 cycles and a coulombic efficiency of 98% at a current density of 0.7 A g−1. For supercapacitor application, the NiMn2O4 material delivers a high energy density ~ 47 Wh kg−1 along with power density ~ 5404 W kg−1. The exceptional storage properties of the NiMn2O4 electrode make it an ideal candidate for energy storage applications.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.