具有新型可重构四路Wilkinson功率合成器的双功率模式Q/ v波段SiGe HBT级联功率放大器

IF 4 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Circuits and Systems II: Express Briefs Pub Date : 2024-11-27 DOI:10.1109/TCSII.2024.3507175

Insu Han;Hanjung Lee;Seong-Mo Moon;Inchan Ju

{"title":"具有新型可重构四路Wilkinson功率合成器的双功率模式Q/ v波段SiGe HBT级联功率放大器","authors":"Insu Han;Hanjung Lee;Seong-Mo Moon;Inchan Ju","doi":"10.1109/TCSII.2024.3507175","DOIUrl":null,"url":null,"abstract":"This brief presents a dual power mode (DPM) Q/V-band SiGe HBT cascode power amplifier (PA) for emerging very low-earth-orbit (VLEO) satellite communication (SATCOM). A novel reconfigurable four-way Wilkinson power combiner balun (WPCB) is proposed, where built-in a collector-to-base (CB) junction of upper HBTs in a SiGe HBT cascode is reconfigured to either reverse- or forward-biased to support high power (HP) or low power (LP) modes of the PA, respectively. This DPM scheme neither requires any lossy series switch at the PA output nor dual power supplies, which improves PA efficiency at power back off (PBO) and reduces system complexity. The DPM PA prototype is fabricated in 0.13 \n<inline-formula> <tex-math>$\\mu $ </tex-math></inline-formula>\nm SiGe HBT BiCMOS. For HP/LP modes, the PA attains measured peak output power (POUT) and peak power added efficiency (PAE) 23.3/18.7 dBm and 30.4/25.8% at 45.0 GHz, respectively, demonstrating its DPM capability. For HP/LP modes at 45 GHz, it delivers linear \n<inline-formula> <tex-math>$P_{\\mathrm { OUT}}$ </tex-math></inline-formula>\n (PAVG) of 17.0/11.8 dBm with average PAE (PAEAVG) of 17.7/13.0% at 250MHz symbol rate DVB-S2X 64 ASPK modulation signal.","PeriodicalId":13101,"journal":{"name":"IEEE Transactions on Circuits and Systems II: Express Briefs","volume":"72 1","pages":"168-172"},"PeriodicalIF":4.0000,"publicationDate":"2024-11-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A Dual Power Mode Q/V-Band SiGe HBT Cascode Power Amplifier With a Novel Reconfigurable Four-Way Wilkinson Power Combiner Balun\",\"authors\":\"Insu Han;Hanjung Lee;Seong-Mo Moon;Inchan Ju\",\"doi\":\"10.1109/TCSII.2024.3507175\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This brief presents a dual power mode (DPM) Q/V-band SiGe HBT cascode power amplifier (PA) for emerging very low-earth-orbit (VLEO) satellite communication (SATCOM). A novel reconfigurable four-way Wilkinson power combiner balun (WPCB) is proposed, where built-in a collector-to-base (CB) junction of upper HBTs in a SiGe HBT cascode is reconfigured to either reverse- or forward-biased to support high power (HP) or low power (LP) modes of the PA, respectively. This DPM scheme neither requires any lossy series switch at the PA output nor dual power supplies, which improves PA efficiency at power back off (PBO) and reduces system complexity. The DPM PA prototype is fabricated in 0.13 \\n<inline-formula> <tex-math>$\\\\mu $ </tex-math></inline-formula>\\nm SiGe HBT BiCMOS. For HP/LP modes, the PA attains measured peak output power (POUT) and peak power added efficiency (PAE) 23.3/18.7 dBm and 30.4/25.8% at 45.0 GHz, respectively, demonstrating its DPM capability. For HP/LP modes at 45 GHz, it delivers linear \\n<inline-formula> <tex-math>$P_{\\\\mathrm { OUT}}$ </tex-math></inline-formula>\\n (PAVG) of 17.0/11.8 dBm with average PAE (PAEAVG) of 17.7/13.0% at 250MHz symbol rate DVB-S2X 64 ASPK modulation signal.\",\"PeriodicalId\":13101,\"journal\":{\"name\":\"IEEE Transactions on Circuits and Systems II: Express Briefs\",\"volume\":\"72 1\",\"pages\":\"168-172\"},\"PeriodicalIF\":4.0000,\"publicationDate\":\"2024-11-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Transactions on Circuits and Systems II: Express Briefs\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10769487/\",\"RegionNum\":2,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Circuits and Systems II: Express Briefs","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10769487/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

摘要

摘要介绍了一种用于极低地球轨道卫星通信的双功率模式（DPM） Q/ v波段SiGe HBT级联功率放大器（PA）。提出了一种新的可重构的四路威尔金森功率组合均衡器（WPCB），其中SiGe HBT级联码中上部HBT的内置集电极-基极（CB）结被重新配置为反向偏置或正向偏置，以分别支持PA的高功率（HP）或低功率（LP）模式。该DPM方案不需要在PA输出端使用任何有损耗的串联开关，也不需要双电源，从而提高了PA在PBO时的效率，降低了系统的复杂性。DPM PA原型是在0.13 $\mu $ m SiGe HBT BiCMOS中制造的。在HP/LP模式下，PA在45.0 GHz时的实测峰值输出功率（POUT）和峰值功率附加效率（PAE）分别为23.3/18.7 dBm和30.4/25.8%，证明了其DPM能力。对于45 GHz的HP/LP模式，它在250MHz符号速率DVB-S2X 64 ASPK调制信号下提供17.0/11.8 dBm的线性$P_{\ maththrm {OUT}}$ （PAVG）和17.7/13.0%的平均paeg。

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查看原文本刊更多论文

A Dual Power Mode Q/V-Band SiGe HBT Cascode Power Amplifier With a Novel Reconfigurable Four-Way Wilkinson Power Combiner Balun

This brief presents a dual power mode (DPM) Q/V-band SiGe HBT cascode power amplifier (PA) for emerging very low-earth-orbit (VLEO) satellite communication (SATCOM). A novel reconfigurable four-way Wilkinson power combiner balun (WPCB) is proposed, where built-in a collector-to-base (CB) junction of upper HBTs in a SiGe HBT cascode is reconfigured to either reverse- or forward-biased to support high power (HP) or low power (LP) modes of the PA, respectively. This DPM scheme neither requires any lossy series switch at the PA output nor dual power supplies, which improves PA efficiency at power back off (PBO) and reduces system complexity. The DPM PA prototype is fabricated in 0.13

$\mu $

m SiGe HBT BiCMOS. For HP/LP modes, the PA attains measured peak output power (POUT) and peak power added efficiency (PAE) 23.3/18.7 dBm and 30.4/25.8% at 45.0 GHz, respectively, demonstrating its DPM capability. For HP/LP modes at 45 GHz, it delivers linear

$P_{\mathrm { OUT}}$

(PAVG) of 17.0/11.8 dBm with average PAE (PAEAVG) of 17.7/13.0% at 250MHz symbol rate DVB-S2X 64 ASPK modulation signal.

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来源期刊

IEEE Transactions on Circuits and Systems II: Express Briefs 工程技术-工程：电子与电气

CiteScore

7.90

自引率

20.50%

发文量

883

审稿时长

3.0 months

期刊介绍： TCAS II publishes brief papers in the field specified by the theory, analysis, design, and practical implementations of circuits, and the application of circuit techniques to systems and to signal processing. Included is the whole spectrum from basic scientific theory to industrial applications. The field of interest covered includes: Circuits: Analog, Digital and Mixed Signal Circuits and Systems Nonlinear Circuits and Systems, Integrated Sensors, MEMS and Systems on Chip, Nanoscale Circuits and Systems, Optoelectronic Circuits and Systems, Power Electronics and Systems Software for Analog-and-Logic Circuits and Systems Control aspects of Circuits and Systems.