基于CuO/α-Ga2O3异质结构的自供电宽禁带紫外探测器

IF 2.5 4区材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Applied Physics A Pub Date : 2024-12-23 DOI:10.1007/s00339-024-08172-5

Junjie Zhang, Xinming Guo, Wenliang Bai, Zhikun Zhang, Xinyu Yang, Yuheng Luo, Huanxing Wu, Lili Zhang, Baohua Zhang, Fuqiang Guo, Renqing Guo

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引用次数: 0

摘要

采用简单的浸渍法和再退火工艺，成功地将CuO纳米颗粒附着在α-Ga2O3纳米阵列/FTO结构上。这导致了基于FTO/α-Ga2O3/CuO异质结的自供电光电电化学光电探测器的创建。与FTO/α-Ga2O3结构相比，光电探测器响应的波长范围更广，包括365 nm紫外光。在254 nm深紫外光下，光电探测器的Iphoto/Idark比为0.27，光响应度为0.4 mA·W−1。同样，当暴露在365 nm紫外光下时，光电探测器的Iphoto/Idark比为1.09，光响应度为0.05 mA·W−1。CuO/α-Ga2O3光电探测器的光响应电流I-t曲线差异明显，可以有效区分不同波长（254 nm和365 nm）的紫外光。

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Self-powered wide bandgap UV detector based on CuO/α-Ga2O3 heterostructure

CuO nanoparticles were successfully attached to the α-Ga₂O₃ nanoarray/FTO structure using a simple dipping method and re-annealing process. This resulted in the creation of a self-powered photoelectrochemical photodetector based on FTO/α-Ga₂O₃/CuO heterojunction. The photodetector responds to a broader range of wavelengths, including 365 nm ultraviolet light, compared to the FTO/α-Ga₂O₃ structure. The photodetector exhibits an I_photo/I_dark ratio of 0.27 and a photoresponsivity of 0.4 mA·W⁻¹ when exposed to 254 nm deep ultraviolet light. Similarly, when exposed to 365 nm ultraviolet light, the photodetector has an I_photo/I_dark ratio of 1.09 and a photoresponsivity of 0.05 mA·W⁻¹. The photoresponse current I–t curves show clear differences, allowing for effective differentiation between ultraviolet light of different wavelengths (254 nm and 365 nm) in the CuO/α-Ga₂O₃ photodetector.

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来源期刊

Applied Physics A 工程技术-材料科学：综合

CiteScore

4.80

自引率

7.40%

发文量

964

审稿时长

38 days

期刊介绍： Applied Physics A publishes experimental and theoretical investigations in applied physics as regular articles, rapid communications, and invited papers. The distinguished 30-member Board of Editors reflects the interdisciplinary approach of the journal and ensures the highest quality of peer review.