{"title":"半导体 Janus \\(\\hbox {M}_{2}\\)COS (M = Zr, Hf) MXenes 热电性能的理论研究","authors":"Gourav Rana, Chandan Bera","doi":"10.1007/s11664-024-11560-5","DOIUrl":null,"url":null,"abstract":"<div><p>A theoretical investigation is conducted on semiconducting MXenes <span>\\(\\hbox {M}_{2}\\)</span>COS (M = Zr, Hf) using both density functional theory and the Boltzmann transport equation. The findings suggest that optimization of thermoelectric properties is more effective through <i>n</i>-type doping than <i>p</i>-type doping. At 300 K, <i>n</i>-type doping yields a power factor of 4.3<span>\\(\\times \\)</span> 10<span>\\(^{3}\\)</span> <span>\\(\\mu \\)</span>W/<span>\\(\\hbox {mK}^{2}\\)</span> for Zr<span>\\({_2}\\)</span>COS and 4.5<span>\\(\\times \\)</span> 10<span>\\(^{3}\\)</span> <span>\\(\\mu \\)</span>W/<span>\\(\\hbox {mK}^{2}\\)</span> for Hf<span>\\({_2}\\)</span>COS. Furthermore, lattice thermal conductivity (<span>\\(\\kappa _{l}\\)</span>) values of 21.8 W/m K and 27 W/m K are obtained for Zr<span>\\({_2}\\)</span>COS and Hf<span>\\({_2}\\)</span>COS, respectively, at 300 K. These values are lower than the lattice thermal conductivity of oxygen-functionalized MXenes <span>\\(\\hbox {Zr}_2\\hbox {CO}_2\\)</span> (61.9 W/m K) and <span>\\(\\hbox {Hf}_2\\hbox {CO}_2\\)</span> (86.3 W/m K). The projected thermoelectric figure of merit value can potentially reach 0.27 and 0.23 at 700 K for <i>n</i>-type Zr<span>\\({_2}\\)</span>COS and Hf<span>\\({_2}\\)</span>COS, respectively. These findings reveal the promising application prospects for <i>n</i>-type Zr<span>\\({_2}\\)</span>COS and Hf<span>\\({_2}\\)</span>COS in the field of thermoelectric materials.</p></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"54 1","pages":"432 - 439"},"PeriodicalIF":2.2000,"publicationDate":"2024-11-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Theoretical Investigation of Thermoelectric Properties of Semiconducting Janus \\\\(\\\\hbox {M}_{2}\\\\)COS (M = Zr, Hf) MXenes\",\"authors\":\"Gourav Rana, Chandan Bera\",\"doi\":\"10.1007/s11664-024-11560-5\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>A theoretical investigation is conducted on semiconducting MXenes <span>\\\\(\\\\hbox {M}_{2}\\\\)</span>COS (M = Zr, Hf) using both density functional theory and the Boltzmann transport equation. The findings suggest that optimization of thermoelectric properties is more effective through <i>n</i>-type doping than <i>p</i>-type doping. At 300 K, <i>n</i>-type doping yields a power factor of 4.3<span>\\\\(\\\\times \\\\)</span> 10<span>\\\\(^{3}\\\\)</span> <span>\\\\(\\\\mu \\\\)</span>W/<span>\\\\(\\\\hbox {mK}^{2}\\\\)</span> for Zr<span>\\\\({_2}\\\\)</span>COS and 4.5<span>\\\\(\\\\times \\\\)</span> 10<span>\\\\(^{3}\\\\)</span> <span>\\\\(\\\\mu \\\\)</span>W/<span>\\\\(\\\\hbox {mK}^{2}\\\\)</span> for Hf<span>\\\\({_2}\\\\)</span>COS. Furthermore, lattice thermal conductivity (<span>\\\\(\\\\kappa _{l}\\\\)</span>) values of 21.8 W/m K and 27 W/m K are obtained for Zr<span>\\\\({_2}\\\\)</span>COS and Hf<span>\\\\({_2}\\\\)</span>COS, respectively, at 300 K. These values are lower than the lattice thermal conductivity of oxygen-functionalized MXenes <span>\\\\(\\\\hbox {Zr}_2\\\\hbox {CO}_2\\\\)</span> (61.9 W/m K) and <span>\\\\(\\\\hbox {Hf}_2\\\\hbox {CO}_2\\\\)</span> (86.3 W/m K). The projected thermoelectric figure of merit value can potentially reach 0.27 and 0.23 at 700 K for <i>n</i>-type Zr<span>\\\\({_2}\\\\)</span>COS and Hf<span>\\\\({_2}\\\\)</span>COS, respectively. These findings reveal the promising application prospects for <i>n</i>-type Zr<span>\\\\({_2}\\\\)</span>COS and Hf<span>\\\\({_2}\\\\)</span>COS in the field of thermoelectric materials.</p></div>\",\"PeriodicalId\":626,\"journal\":{\"name\":\"Journal of Electronic Materials\",\"volume\":\"54 1\",\"pages\":\"432 - 439\"},\"PeriodicalIF\":2.2000,\"publicationDate\":\"2024-11-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Electronic Materials\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s11664-024-11560-5\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Electronic Materials","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s11664-024-11560-5","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
摘要
利用密度泛函理论和玻尔兹曼输运方程对半导体 MXenes \(\hbox {M}_{2}\)COS (M = Zr、Hf)进行了理论研究。研究结果表明,通过 n 型掺杂比 p 型掺杂能更有效地优化热电性能。在300 K时,Zr({_2}\)COS的n型掺杂产生的功率因数为4.3(\times \)10(^{3}\)\(\mu \)W/\(\hbox {mK}^{2}\),而Hf({_2}\)COS的功率因数为4.5(\times \)10(^{3}\)\(\mu \)W/\(\hbox {mK}^{2}\)。此外,Zr\({_2}\)COS 和 Hf\({_2}\)COS 在 300 K 时的晶格热导率(\(\kappa _{l}\))值分别为 21.8 W/m K 和 27 W/m K。这些值低于氧官能化 MXenes 的晶格热导率(61.9 W/m K)和(86.3 W/m K)。在 700 K 时,n 型 Zr\({_2}\)COS 和 Hf\({_2}\)COS 的预计热电功勋值可能分别达到 0.27 和 0.23。这些发现揭示了 n 型 Zr\({_2}\)COS 和 Hf\({_2}\)COS 在热电材料领域的广阔应用前景。
Theoretical Investigation of Thermoelectric Properties of Semiconducting Janus \(\hbox {M}_{2}\)COS (M = Zr, Hf) MXenes
A theoretical investigation is conducted on semiconducting MXenes \(\hbox {M}_{2}\)COS (M = Zr, Hf) using both density functional theory and the Boltzmann transport equation. The findings suggest that optimization of thermoelectric properties is more effective through n-type doping than p-type doping. At 300 K, n-type doping yields a power factor of 4.3\(\times \) 10\(^{3}\)\(\mu \)W/\(\hbox {mK}^{2}\) for Zr\({_2}\)COS and 4.5\(\times \) 10\(^{3}\)\(\mu \)W/\(\hbox {mK}^{2}\) for Hf\({_2}\)COS. Furthermore, lattice thermal conductivity (\(\kappa _{l}\)) values of 21.8 W/m K and 27 W/m K are obtained for Zr\({_2}\)COS and Hf\({_2}\)COS, respectively, at 300 K. These values are lower than the lattice thermal conductivity of oxygen-functionalized MXenes \(\hbox {Zr}_2\hbox {CO}_2\) (61.9 W/m K) and \(\hbox {Hf}_2\hbox {CO}_2\) (86.3 W/m K). The projected thermoelectric figure of merit value can potentially reach 0.27 and 0.23 at 700 K for n-type Zr\({_2}\)COS and Hf\({_2}\)COS, respectively. These findings reveal the promising application prospects for n-type Zr\({_2}\)COS and Hf\({_2}\)COS in the field of thermoelectric materials.
期刊介绍:
The Journal of Electronic Materials (JEM) reports monthly on the science and technology of electronic materials, while examining new applications for semiconductors, magnetic alloys, dielectrics, nanoscale materials, and photonic materials. The journal welcomes articles on methods for preparing and evaluating the chemical, physical, electronic, and optical properties of these materials. Specific areas of interest are materials for state-of-the-art transistors, nanotechnology, electronic packaging, detectors, emitters, metallization, superconductivity, and energy applications.
Review papers on current topics enable individuals in the field of electronics to keep abreast of activities in areas peripheral to their own. JEM also selects papers from conferences such as the Electronic Materials Conference, the U.S. Workshop on the Physics and Chemistry of II-VI Materials, and the International Conference on Thermoelectrics. It benefits both specialists and non-specialists in the electronic materials field.
A journal of The Minerals, Metals & Materials Society.