{"title":"The Effect of Relative Humidity in Conductive Atomic Force Microscopy (Adv. Mater. 51/2024)","authors":"Yue Yuan, Mario Lanza","doi":"10.1002/adma.202470411","DOIUrl":null,"url":null,"abstract":"<p><b>Conductive Atomic Force Microscopy</b></p><p>In article number 2405932, Yue Yuan and Mario Lanza clarify what is the effect of relative humidity in conductive atomic force microscopy. They measure over 17,000 different locations on the surface of ten different samples (insulating, semiconducting and conducting) under seven different relative humidity levels. In insulators and thick (>5 nm) semiconductors, the water meniscus at the tip/sample junction increases the currents registered.\n\n <figure>\n <div><picture>\n <source></source></picture><p></p>\n </div>\n </figure></p>","PeriodicalId":114,"journal":{"name":"Advanced Materials","volume":"36 51","pages":""},"PeriodicalIF":27.4000,"publicationDate":"2024-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/adma.202470411","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Materials","FirstCategoryId":"88","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/adma.202470411","RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
The Effect of Relative Humidity in Conductive Atomic Force Microscopy (Adv. Mater. 51/2024)
Conductive Atomic Force Microscopy
In article number 2405932, Yue Yuan and Mario Lanza clarify what is the effect of relative humidity in conductive atomic force microscopy. They measure over 17,000 different locations on the surface of ten different samples (insulating, semiconducting and conducting) under seven different relative humidity levels. In insulators and thick (>5 nm) semiconductors, the water meniscus at the tip/sample junction increases the currents registered.
期刊介绍:
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