掺锡氧化铟薄膜的制备及其在磷酸质子导体全固态电致变色器件中的应用

IF 6.3 2区 材料科学 Q2 CHEMISTRY, PHYSICAL
Danni Dang, Yang Ren, Chaoqun Hou, Yuhe Gao, Ping Liu, Masaya Fujioka, Kai Tang, Haiyan He, Li Lei
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引用次数: 0

摘要

锡掺杂氧化铟(ITO)薄膜通常用作光电应用的透明电极,如电致变色器件(ECDs)和太阳能电池。制备低于中间温度(≤350°C)的ITO薄膜已经成为必须解决的挑战,以扩大其应用范围(例如基于磷酸盐质子导体和柔性光电器件的全固态ECDs)。本工作旨在开发一种在中温条件下制备ITO薄膜的实用技术。比较了溶胶-凝胶法和磁控溅射法制备的ITO薄膜在这些温度下的性能。薄膜中C - h和C=C基团等有机残留物的散射作用,阻碍了Sn4+与In3+的取代,阻碍了晶粒的生长和载流子的迁移,导致载流子浓度和迁移率较差。这些因素阻碍了溶胶-凝胶法制备高透明导电ITO薄膜。将室温磁控溅射与O2热处理结合,再进行350℃以下的还原气氛处理,得到了平均可见光透过率为87.0%(含衬底)、电阻率为2.3×10-4 Ω·cm的无碳ITO薄膜。进一步的实验研究了将所得薄膜应用于ITO/氧化钨/磷酸质子导体/氧化镍/ITO结构的全固态ECDs的可行性。该ECD表现出良好的电致变色能力,特别是在650 nm处漂白状态透射率高达76%,这使其具有出色的透明特性。本工作不仅明确了溶胶-凝胶法中温制备ITO薄膜的局限性和原因,为ITO薄膜制备技术的选择提供了理论参考,也为新型无底物全固态ECDs的发展奠定了基础。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Preparation of tin-doped indium oxide films and application in all-solid-state electrochromic devices based on phosphate proton conductors
Tin-doped indium oxide (ITO) films are often used as transparent electrodes for optoelectronic applications such as electrochromic devices (ECDs) and solar cells. Preparing ITO films below intermediate temperatures (≤ 350 °C) has become a challenge that must be solved to expand their range of applications (such as all-solid-state ECDs based on phosphate proton conductors and flexible optoelectronic devices). This work aims to develop a practical technique for preparing ITO films at intermediate temperatures. The performances of ITO films prepared by sol-gel and magnetron sputtering methods at these temperatures were compared. The scattering effect of the organic residues in the film, such as the C–H and C=C groups, hinders the substitution of Sn4+ with In3+, the grain growth and the carrier migration, leading to poor carrier concentration and mobility. These factors hindered the preparation of highly transparent and conductive ITO films obtained by sol-gel method. By combining room temperature magnetron sputtering with heat treatment under an O2 followed by a reducing atmosphere below 350 °C, a carbon-free ITO film with an average visible light transmittance of 87.0% (with substrate) and a resistivity of 2.3×10-4 Ω·cm was obtained. Further experiments investigated the feasibility of applying the obtained film in all-solid-state ECDs with ITO/tungsten oxide/phosphate proton conductor/nickel oxide/ITO structure. This ECD exhibits good electrochromic capabilities, particularly demonstrated by a bleached state transmittance of up tp 76% at 650 nm, which endows it with outstanding transparency characteristics. This work not only clarifies the limitations and causes of the intermediate temperatures preparation of ITO films by sol-gel method, offering a theoretical reference for the selection of ITO film preparation technologies, but also lays a foundation for the development of novel substrate-free all-solid-state ECDs.
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来源期刊
Journal of Alloys and Compounds
Journal of Alloys and Compounds 工程技术-材料科学:综合
CiteScore
11.10
自引率
14.50%
发文量
5146
审稿时长
67 days
期刊介绍: The Journal of Alloys and Compounds is intended to serve as an international medium for the publication of work on solid materials comprising compounds as well as alloys. Its great strength lies in the diversity of discipline which it encompasses, drawing together results from materials science, solid-state chemistry and physics.
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