Danni Dang, Yang Ren, Chaoqun Hou, Yuhe Gao, Ping Liu, Masaya Fujioka, Kai Tang, Haiyan He, Li Lei
{"title":"掺锡氧化铟薄膜的制备及其在磷酸质子导体全固态电致变色器件中的应用","authors":"Danni Dang, Yang Ren, Chaoqun Hou, Yuhe Gao, Ping Liu, Masaya Fujioka, Kai Tang, Haiyan He, Li Lei","doi":"10.1016/j.jallcom.2024.178197","DOIUrl":null,"url":null,"abstract":"Tin-doped indium oxide (ITO) films are often used as transparent electrodes for optoelectronic applications such as electrochromic devices (ECDs) and solar cells. Preparing ITO films below intermediate temperatures (≤ 350 °C) has become a challenge that must be solved to expand their range of applications (such as all-solid-state ECDs based on phosphate proton conductors and flexible optoelectronic devices). This work aims to develop a practical technique for preparing ITO films at intermediate temperatures. The performances of ITO films prepared by sol-gel and magnetron sputtering methods at these temperatures were compared. The scattering effect of the organic residues in the film, such as the C–H and C=C groups, hinders the substitution of Sn<sup>4+</sup> with In<sup>3+</sup>, the grain growth and the carrier migration, leading to poor carrier concentration and mobility. These factors hindered the preparation of highly transparent and conductive ITO films obtained by sol-gel method. By combining room temperature magnetron sputtering with heat treatment under an O<sub>2</sub> followed by a reducing atmosphere below 350 °C, a carbon-free ITO film with an average visible light transmittance of 87.0% (with substrate) and a resistivity of 2.3×10<sup>-4</sup> Ω·cm was obtained. Further experiments investigated the feasibility of applying the obtained film in all-solid-state ECDs with ITO/tungsten oxide/phosphate proton conductor/nickel oxide/ITO structure. This ECD exhibits good electrochromic capabilities, particularly demonstrated by a bleached state transmittance of up tp 76% at 650<!-- --> <!-- -->nm, which endows it with outstanding transparency characteristics. This work not only clarifies the limitations and causes of the intermediate temperatures preparation of ITO films by sol-gel method, offering a theoretical reference for the selection of ITO film preparation technologies, but also lays a foundation for the development of novel substrate-free all-solid-state ECDs.","PeriodicalId":344,"journal":{"name":"Journal of Alloys and Compounds","volume":"31 1","pages":""},"PeriodicalIF":6.3000,"publicationDate":"2024-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Preparation of tin-doped indium oxide films and application in all-solid-state electrochromic devices based on phosphate proton conductors\",\"authors\":\"Danni Dang, Yang Ren, Chaoqun Hou, Yuhe Gao, Ping Liu, Masaya Fujioka, Kai Tang, Haiyan He, Li Lei\",\"doi\":\"10.1016/j.jallcom.2024.178197\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Tin-doped indium oxide (ITO) films are often used as transparent electrodes for optoelectronic applications such as electrochromic devices (ECDs) and solar cells. Preparing ITO films below intermediate temperatures (≤ 350 °C) has become a challenge that must be solved to expand their range of applications (such as all-solid-state ECDs based on phosphate proton conductors and flexible optoelectronic devices). This work aims to develop a practical technique for preparing ITO films at intermediate temperatures. The performances of ITO films prepared by sol-gel and magnetron sputtering methods at these temperatures were compared. The scattering effect of the organic residues in the film, such as the C–H and C=C groups, hinders the substitution of Sn<sup>4+</sup> with In<sup>3+</sup>, the grain growth and the carrier migration, leading to poor carrier concentration and mobility. These factors hindered the preparation of highly transparent and conductive ITO films obtained by sol-gel method. By combining room temperature magnetron sputtering with heat treatment under an O<sub>2</sub> followed by a reducing atmosphere below 350 °C, a carbon-free ITO film with an average visible light transmittance of 87.0% (with substrate) and a resistivity of 2.3×10<sup>-4</sup> Ω·cm was obtained. Further experiments investigated the feasibility of applying the obtained film in all-solid-state ECDs with ITO/tungsten oxide/phosphate proton conductor/nickel oxide/ITO structure. This ECD exhibits good electrochromic capabilities, particularly demonstrated by a bleached state transmittance of up tp 76% at 650<!-- --> <!-- -->nm, which endows it with outstanding transparency characteristics. This work not only clarifies the limitations and causes of the intermediate temperatures preparation of ITO films by sol-gel method, offering a theoretical reference for the selection of ITO film preparation technologies, but also lays a foundation for the development of novel substrate-free all-solid-state ECDs.\",\"PeriodicalId\":344,\"journal\":{\"name\":\"Journal of Alloys and Compounds\",\"volume\":\"31 1\",\"pages\":\"\"},\"PeriodicalIF\":6.3000,\"publicationDate\":\"2024-12-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Alloys and Compounds\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.1016/j.jallcom.2024.178197\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"CHEMISTRY, PHYSICAL\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Alloys and Compounds","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1016/j.jallcom.2024.178197","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
Preparation of tin-doped indium oxide films and application in all-solid-state electrochromic devices based on phosphate proton conductors
Tin-doped indium oxide (ITO) films are often used as transparent electrodes for optoelectronic applications such as electrochromic devices (ECDs) and solar cells. Preparing ITO films below intermediate temperatures (≤ 350 °C) has become a challenge that must be solved to expand their range of applications (such as all-solid-state ECDs based on phosphate proton conductors and flexible optoelectronic devices). This work aims to develop a practical technique for preparing ITO films at intermediate temperatures. The performances of ITO films prepared by sol-gel and magnetron sputtering methods at these temperatures were compared. The scattering effect of the organic residues in the film, such as the C–H and C=C groups, hinders the substitution of Sn4+ with In3+, the grain growth and the carrier migration, leading to poor carrier concentration and mobility. These factors hindered the preparation of highly transparent and conductive ITO films obtained by sol-gel method. By combining room temperature magnetron sputtering with heat treatment under an O2 followed by a reducing atmosphere below 350 °C, a carbon-free ITO film with an average visible light transmittance of 87.0% (with substrate) and a resistivity of 2.3×10-4 Ω·cm was obtained. Further experiments investigated the feasibility of applying the obtained film in all-solid-state ECDs with ITO/tungsten oxide/phosphate proton conductor/nickel oxide/ITO structure. This ECD exhibits good electrochromic capabilities, particularly demonstrated by a bleached state transmittance of up tp 76% at 650 nm, which endows it with outstanding transparency characteristics. This work not only clarifies the limitations and causes of the intermediate temperatures preparation of ITO films by sol-gel method, offering a theoretical reference for the selection of ITO film preparation technologies, but also lays a foundation for the development of novel substrate-free all-solid-state ECDs.
期刊介绍:
The Journal of Alloys and Compounds is intended to serve as an international medium for the publication of work on solid materials comprising compounds as well as alloys. Its great strength lies in the diversity of discipline which it encompasses, drawing together results from materials science, solid-state chemistry and physics.