绿色合成的 Ag2S 纳米粒子的结构、光学和介电性能

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Krishna Gopal Mondal, Soumen Rakshit, Bappa Sona Kar, Satyajit Saha, Paresh Chandra Jana, Makhanlal Nanda Goswami, Debabrata Maji, Jatindranath Mirda
{"title":"绿色合成的 Ag2S 纳米粒子的结构、光学和介电性能","authors":"Krishna Gopal Mondal,&nbsp;Soumen Rakshit,&nbsp;Bappa Sona Kar,&nbsp;Satyajit Saha,&nbsp;Paresh Chandra Jana,&nbsp;Makhanlal Nanda Goswami,&nbsp;Debabrata Maji,&nbsp;Jatindranath Mirda","doi":"10.1007/s10854-024-14071-5","DOIUrl":null,"url":null,"abstract":"<div><p>A facile, convenient, environment friendly green synthesis method has been used to synthesize Ag<sub>2</sub>S nanoparticles (NPs) using lemon extract. The various characterizations such as XRD, FESEM, FTIR and UV–Vis absorption spectrum confirm the good quality of nanosized Ag<sub>2</sub>S particles. The temperature and frequency dependent dielectric properties have been studied to investigate the electric behaviour of Ag<sub>2</sub>S NPs. A relaxation peak observed in loss tangent vs. frequency plot and it shifted towards higher frequency with increasing temperature. The variation of AC conductivity with frequency reveals that at lower frequency region obeys Jonsher’s Power Law (JPL) and Super-linear Power Law (SPL) at higher frequency region. Non-overlapping Small Polaron Tunnelling (NSPT) model is used to clarify the conduction process of JPL portion of the curve. The Nyquist plot of the sample has demonstrated two semi-circular arches, which suggests the effect of grain and grain boundary resistance in the Ag<sub>2</sub>S NPs. The grain and grain boundary resistance decrease with increasing temperature, which indicates the Negative Temperature Coefficient of Resistance (NTCR) behaviour like a semiconductor. The activation energy (<i>E</i><sub><i>a</i></sub>) has been estimated from the temperature dependent AC conductivity measurement. The P-E hysteresis loop measurement of Ag<sub>2</sub>S NPs shows the relaxor-ferroelectric behaviour at room temperature. The fabrication of p–n junction diode (Ag<sub>2</sub>S/Si) has been constructed and demonstrated the diode characteristics for the device applications.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"35 36","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2024-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Structural, optical and dielectric properties of green synthesized Ag2S nanoparticles\",\"authors\":\"Krishna Gopal Mondal,&nbsp;Soumen Rakshit,&nbsp;Bappa Sona Kar,&nbsp;Satyajit Saha,&nbsp;Paresh Chandra Jana,&nbsp;Makhanlal Nanda Goswami,&nbsp;Debabrata Maji,&nbsp;Jatindranath Mirda\",\"doi\":\"10.1007/s10854-024-14071-5\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>A facile, convenient, environment friendly green synthesis method has been used to synthesize Ag<sub>2</sub>S nanoparticles (NPs) using lemon extract. The various characterizations such as XRD, FESEM, FTIR and UV–Vis absorption spectrum confirm the good quality of nanosized Ag<sub>2</sub>S particles. The temperature and frequency dependent dielectric properties have been studied to investigate the electric behaviour of Ag<sub>2</sub>S NPs. A relaxation peak observed in loss tangent vs. frequency plot and it shifted towards higher frequency with increasing temperature. The variation of AC conductivity with frequency reveals that at lower frequency region obeys Jonsher’s Power Law (JPL) and Super-linear Power Law (SPL) at higher frequency region. Non-overlapping Small Polaron Tunnelling (NSPT) model is used to clarify the conduction process of JPL portion of the curve. The Nyquist plot of the sample has demonstrated two semi-circular arches, which suggests the effect of grain and grain boundary resistance in the Ag<sub>2</sub>S NPs. The grain and grain boundary resistance decrease with increasing temperature, which indicates the Negative Temperature Coefficient of Resistance (NTCR) behaviour like a semiconductor. The activation energy (<i>E</i><sub><i>a</i></sub>) has been estimated from the temperature dependent AC conductivity measurement. The P-E hysteresis loop measurement of Ag<sub>2</sub>S NPs shows the relaxor-ferroelectric behaviour at room temperature. The fabrication of p–n junction diode (Ag<sub>2</sub>S/Si) has been constructed and demonstrated the diode characteristics for the device applications.</p></div>\",\"PeriodicalId\":646,\"journal\":{\"name\":\"Journal of Materials Science: Materials in Electronics\",\"volume\":\"35 36\",\"pages\":\"\"},\"PeriodicalIF\":2.8000,\"publicationDate\":\"2024-12-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Materials Science: Materials in Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s10854-024-14071-5\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-024-14071-5","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

摘要

采用一种简单、方便、环保的绿色合成方法,利用柠檬提取物合成Ag2S纳米粒子。XRD、FESEM、FTIR和UV-Vis吸收光谱等多种表征证实了纳米Ag2S颗粒的良好质量。研究了温度和频率对Ag2S NPs介电性能的影响。损耗正切-频率图中有一个松弛峰,随着温度的升高,松弛峰向高频偏移。交流电导率随频率的变化表明,在低频区服从Jonsher幂律(JPL),在高频区服从超线性幂律(SPL)。采用非重叠小极化子隧穿(NSPT)模型来解释曲线中JPL部分的传导过程。样品的Nyquist图显示出两个半圆拱,这表明Ag2S NPs中晶粒和晶界电阻的影响。晶粒和晶界电阻随温度的升高而减小,表现出类似半导体的负温度电阻系数(NTCR)行为。从温度相关的交流电导率测量中估计了活化能。对Ag2S NPs的P-E磁滞回线测量表明,Ag2S NPs在室温下具有弛豫-铁电特性。本文构建了p-n结二极管(Ag2S/Si)的制备方法,并证明了其器件应用的二极管特性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Structural, optical and dielectric properties of green synthesized Ag2S nanoparticles

A facile, convenient, environment friendly green synthesis method has been used to synthesize Ag2S nanoparticles (NPs) using lemon extract. The various characterizations such as XRD, FESEM, FTIR and UV–Vis absorption spectrum confirm the good quality of nanosized Ag2S particles. The temperature and frequency dependent dielectric properties have been studied to investigate the electric behaviour of Ag2S NPs. A relaxation peak observed in loss tangent vs. frequency plot and it shifted towards higher frequency with increasing temperature. The variation of AC conductivity with frequency reveals that at lower frequency region obeys Jonsher’s Power Law (JPL) and Super-linear Power Law (SPL) at higher frequency region. Non-overlapping Small Polaron Tunnelling (NSPT) model is used to clarify the conduction process of JPL portion of the curve. The Nyquist plot of the sample has demonstrated two semi-circular arches, which suggests the effect of grain and grain boundary resistance in the Ag2S NPs. The grain and grain boundary resistance decrease with increasing temperature, which indicates the Negative Temperature Coefficient of Resistance (NTCR) behaviour like a semiconductor. The activation energy (Ea) has been estimated from the temperature dependent AC conductivity measurement. The P-E hysteresis loop measurement of Ag2S NPs shows the relaxor-ferroelectric behaviour at room temperature. The fabrication of p–n junction diode (Ag2S/Si) has been constructed and demonstrated the diode characteristics for the device applications.

求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信