氢化非晶硅中尾态载流子的热激发和重组率

IF 2.8 4区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Materials Science: Materials in Electronics Pub Date : 2024-12-18 DOI:10.1007/s10854-024-14062-6

Chisato Ogihara

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Thermal excitation of carriers at tail states and recombination rate in hydrogenated amorphous silicon

Measurements of low-energy photoluminescence (PL) in hydrogenated amorphous silicon (a-Si:H) have been performed by means of frequency-resolved spectroscopy. Temperature variation of radiative recombination rate of electron–hole pairs and thermal excitation of carriers at the tail states are discussed. The results suggest that the tail electrons do not contribute to the PL of the energy lower than 1.0 eV. Experimental results are quantitatively explained by considering a two-level system instead of the tail states.

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来源期刊

Journal of Materials Science: Materials in Electronics 工程技术-材料科学：综合

CiteScore

5.00

自引率

7.10%

发文量

1931

审稿时长

2 months

期刊介绍： The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.