Nan Chen, Iqra Ramzan, Shuhui Li and Claire J. Carmalt*,
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引用次数: 0
摘要
利用一种简单、廉价和有效的薄膜制备方法--气溶胶辅助化学气相沉积(AACVD)--沉积了掺杂钼的氧化锌(MZO)、掺杂铪的氧化锌(FZO)和掺杂钼/铪的氧化锌(MFZO)薄膜。通过 X 射线光电子能谱 (XPS) 和 X 射线衍射 (XRD) 发现的单胞参数下降,证实了氧化锌成功掺杂了钼和/或氟。X 射线衍射还证实,所有薄膜都具有六方钨锌结构。扫描电子显微镜显示,所有薄膜都具有清晰的表面特征。通过霍尔效应测量,未掺杂 ZnO 薄膜具有 ∼102 Ω-cm 的高电阻率,通过紫外-可见(UV-vis)-红外光谱测定,其可见光透过率为 72%。掺杂和共掺薄膜的透射率提高到 75-85%。掺杂 6.2 原子% Mo 和 3.6 原子% F 的氧化锌薄膜在 550 ℃ 下沉积后电阻最小(5.084 × 10-3 Ω-cm),载流子浓度(5.483 × 1019 cm-3)和迁移率(21.78 cm2 V-1 s-1)显著提高。这些薄膜具有更好的光学和电学性能,并保持了六方菱形结构。这项研究证明了掺杂策略在提高氧化锌薄膜的光电应用性能方面的潜力。
Synthesis and Characterization of Optically Transparent and Electrically Conductive Mo-Doped ZnO, F-Doped ZnO, and Mo/F-Codoped ZnO Thin Films via Aerosol-Assisted Chemical Vapor Deposition
Mo-doped ZnO (MZO), F-doped ZnO (FZO), and Mo/F-codoped ZnO (MFZO) films have been deposited using a simple, cheap, and effective thin-film preparation route, aerosol-assisted chemical vapor deposition (AACVD). ZnO was successfully doped with Mo and/or F, confirmed by X-ray photoelectron spectroscopy (XPS) and by a decrease in unit cell parameters from X-ray diffraction (XRD). XRD also confirmed that all of the films had hexagonal wurtzite ZnO structures. Scanning electron microscopy showed that all of the films had well-defined surface features. The undoped ZnO film had a high resistivity of ∼102 Ω·cm, determined by Hall effect measurements, and a visible light transmittance of 72%, determined by ultraviolet–visible (UV–vis)-IR spectroscopy. The transmittance of the doped and codoped films was improved to 75–85%. The ZnO film codoped with 6.2 atom% Mo and 3.6 atom% F, deposited at 550 °C achieved the minimum resistance (5.084 × 10–3 Ω·cm) with a significant improvement in carrier concentration (5.483 × 1019 cm–3) and mobility (21.78 cm2 V–1 s–1).
Mo-doped, F-doped, and Mo/F-codoped ZnO thin films were synthesized using aerosol-assisted chemical vapor deposition (AACVD), a simple and cost-effective method. The films exhibited improved optical and electrical properties and maintained a hexagonal wurtzite structure. This study demonstrates the potential of doping strategies to enhance the performance of ZnO thin films for optoelectronic applications.
期刊介绍:
The aim of Crystal Growth & Design is to stimulate crossfertilization of knowledge among scientists and engineers working in the fields of crystal growth, crystal engineering, and the industrial application of crystalline materials.
Crystal Growth & Design publishes theoretical and experimental studies of the physical, chemical, and biological phenomena and processes related to the design, growth, and application of crystalline materials. Synergistic approaches originating from different disciplines and technologies and integrating the fields of crystal growth, crystal engineering, intermolecular interactions, and industrial application are encouraged.