立方体绝缘体上碳化硅平台上TE/TM微环谐振器的克尔非线性

IF 3.6 2区物理与天体物理 Q2 PHYSICS, APPLIED

Applied Physics Letters Pub Date : 2024-12-17 DOI:10.1063/5.0221324

Debin Meng, Liwei Li, Bin-Kai Liao, Xiaoke Yi

{"title":"立方体绝缘体上碳化硅平台上TE/TM微环谐振器的克尔非线性","authors":"Debin Meng, Liwei Li, Bin-Kai Liao, Xiaoke Yi","doi":"10.1063/5.0221324","DOIUrl":null,"url":null,"abstract":"Kerr nonlinearity plays a pivotal role in nonlinear photonics. Recent advancement in wafer bonding techniques has led to the creation of a cubic silicon carbide-on-insulator (3C-SiCOI) platform with improved crystalline quality, offering exciting prospects for investigating the Kerr effect in 3C-SiC. In this paper, we demonstrate 3C-SiC's Kerr effects through design, fabrication, and experimental investigation. By using the cavity enhanced four-wave mixing based on microring resonator (MRRs) supporting transverse electric or magnetic (TE/TM) polarizations on the 3C-SiCOI platform, we experimentally retrieve the Kerr nonlinear index (n2) of 3C-SiC within diverse waveguide dimensions, revealing a value of 4.92 and 5.00 × 10−19 m2/W for TE and TM polarizations, respectively. We further confirm the thermal stability of the 3C-SiC in Kerr effects at elevated temperatures from 100 °C to 300 °C, showing negligible change of n2. Moreover, we demonstrated optical parametric oscillation (OPO) in the fabricated single mode MRR via a dual-pump configuration. With an input power of less than 50 mW, a distinct OPO spectrum covering the C band has been achieved. These results signify the emergence of 3C-SiCOI as a promising platform for Kerr applications.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"30 1","pages":""},"PeriodicalIF":3.6000,"publicationDate":"2024-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Kerr nonlinearity in TE/TM microring resonators on cubic silicon carbide-on-insulator platforms\",\"authors\":\"Debin Meng, Liwei Li, Bin-Kai Liao, Xiaoke Yi\",\"doi\":\"10.1063/5.0221324\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Kerr nonlinearity plays a pivotal role in nonlinear photonics. Recent advancement in wafer bonding techniques has led to the creation of a cubic silicon carbide-on-insulator (3C-SiCOI) platform with improved crystalline quality, offering exciting prospects for investigating the Kerr effect in 3C-SiC. In this paper, we demonstrate 3C-SiC's Kerr effects through design, fabrication, and experimental investigation. By using the cavity enhanced four-wave mixing based on microring resonator (MRRs) supporting transverse electric or magnetic (TE/TM) polarizations on the 3C-SiCOI platform, we experimentally retrieve the Kerr nonlinear index (n2) of 3C-SiC within diverse waveguide dimensions, revealing a value of 4.92 and 5.00 × 10−19 m2/W for TE and TM polarizations, respectively. We further confirm the thermal stability of the 3C-SiC in Kerr effects at elevated temperatures from 100 °C to 300 °C, showing negligible change of n2. Moreover, we demonstrated optical parametric oscillation (OPO) in the fabricated single mode MRR via a dual-pump configuration. With an input power of less than 50 mW, a distinct OPO spectrum covering the C band has been achieved. These results signify the emergence of 3C-SiCOI as a promising platform for Kerr applications.\",\"PeriodicalId\":8094,\"journal\":{\"name\":\"Applied Physics Letters\",\"volume\":\"30 1\",\"pages\":\"\"},\"PeriodicalIF\":3.6000,\"publicationDate\":\"2024-12-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Applied Physics Letters\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1063/5.0221324\",\"RegionNum\":2,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"PHYSICS, APPLIED\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applied Physics Letters","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1063/5.0221324","RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}

引用次数: 0

摘要

克尔非线性在非线性光子学中起着举足轻重的作用。最近，晶圆键合技术的进步促成了晶体质量更高的立方碳化硅绝缘体（3C-SiCOI）平台的诞生，为研究 3C-SiC 中的克尔效应提供了令人兴奋的前景。在本文中，我们通过设计、制造和实验研究证明了 3C-SiC 的克尔效应。通过在 3C-SiCOI 平台上使用基于支持横向电或磁（TE/TM）极化的微oring 谐振器（MRR）的空腔增强四波混频，我们在不同的波导尺寸内实验检索了 3C-SiC 的克尔非线性指数（n2），发现 TE 和 TM 极化的值分别为 4.92 和 5.00 × 10-19 m2/W。我们进一步证实了 3C-SiC 在 100 ℃ 至 300 ℃ 高温条件下的克尔效应热稳定性，n2 的变化可以忽略不计。此外，我们还在通过双泵配置制造的单模 MRR 中演示了光学参量振荡（OPO）。在输入功率小于 50 mW 的情况下，实现了覆盖 C 波段的独特 OPO 光谱。这些结果表明，3C-SiCOI 是一种很有前途的克尔应用平台。

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Kerr nonlinearity in TE/TM microring resonators on cubic silicon carbide-on-insulator platforms

Kerr nonlinearity plays a pivotal role in nonlinear photonics. Recent advancement in wafer bonding techniques has led to the creation of a cubic silicon carbide-on-insulator (3C-SiCOI) platform with improved crystalline quality, offering exciting prospects for investigating the Kerr effect in 3C-SiC. In this paper, we demonstrate 3C-SiC's Kerr effects through design, fabrication, and experimental investigation. By using the cavity enhanced four-wave mixing based on microring resonator (MRRs) supporting transverse electric or magnetic (TE/TM) polarizations on the 3C-SiCOI platform, we experimentally retrieve the Kerr nonlinear index (n2) of 3C-SiC within diverse waveguide dimensions, revealing a value of 4.92 and 5.00 × 10−19 m2/W for TE and TM polarizations, respectively. We further confirm the thermal stability of the 3C-SiC in Kerr effects at elevated temperatures from 100 °C to 300 °C, showing negligible change of n2. Moreover, we demonstrated optical parametric oscillation (OPO) in the fabricated single mode MRR via a dual-pump configuration. With an input power of less than 50 mW, a distinct OPO spectrum covering the C band has been achieved. These results signify the emergence of 3C-SiCOI as a promising platform for Kerr applications.

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来源期刊

Applied Physics Letters 物理-物理：应用

CiteScore

6.40

自引率

10.00%

发文量

1821

审稿时长

1.6 months

期刊介绍： Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology. In addition to regular articles, the journal also publishes invited Fast Track, Perspectives, and in-depth Editorials which report on cutting-edge areas in applied physics. APL Perspectives are forward-looking invited letters which highlight recent developments or discoveries. Emphasis is placed on very recent developments, potentially disruptive technologies, open questions and possible solutions. They also include a mini-roadmap detailing where the community should direct efforts in order for the phenomena to be viable for application and the challenges associated with meeting that performance threshold. Perspectives are characterized by personal viewpoints and opinions of recognized experts in the field. Fast Track articles are invited original research articles that report results that are particularly novel and important or provide a significant advancement in an emerging field. Because of the urgency and scientific importance of the work, the peer review process is accelerated. If, during the review process, it becomes apparent that the paper does not meet the Fast Track criterion, it is returned to a normal track.