Hye Jin Lee, Jeong-Hyeon Kim, Seung Hun Lee, Sung-Nam Lee
{"title":"用于内存传感和计算应用的基于 Ga2O3 的光电忆阻器和忆阻器突触。","authors":"Hye Jin Lee, Jeong-Hyeon Kim, Seung Hun Lee, Sung-Nam Lee","doi":"10.3390/nano14231972","DOIUrl":null,"url":null,"abstract":"<p><p>This study presents the fabrication and characterization of a dual-functional Pt/Ga<sub>2</sub>O<sub>3</sub>/Pt optoelectronic synaptic device, capable of operating as both a memristor and a memcapacitor. We detail the optimized radio frequency (RF) sputtering parameters, including a base pressure of 8.7 × 10<sup>-7</sup> Torr, RF power of 100 W, working pressure of 3 mTorr, and the use of high-purity Ga<sub>2</sub>O<sub>3</sub> and Pt targets. These precisely controlled conditions facilitated the formation of an amorphous Ga<sub>2</sub>O<sub>3</sub> thin film, as confirmed by XRD and AFM analyses, which demonstrated notable optical and electrical properties, including light absorption properties in the visible spectrum. The device demonstrated distinct resistive and capacitive switching behaviors, with memory characteristics highly dependent on the wavelength of the applied light. Ultraviolet (365 nm) exposure facilitated long-term memory retention, while visible light (660 nm) supported short-term memory behavior. Paired-pulse facilitation (PPF) measurements revealed that capacitance showed slower decay rates than EPSC, suggesting a more stable memory performance due to the dynamics of carrier trapping and detrapping at the insulator interface. Learning simulations further highlighted the efficiency of these devices, with improved memory retention upon repeated exposure to UV light pulses. Visual encoding simulations on a 3 × 3 pixel array also demonstrated effective multi-level memory storage using varying light intensities. These findings suggest that Ga<sub>2</sub>O<sub>3</sub>-based memristor and memcapacitor devices have significant potential for neuromorphic applications, offering tunable memory performance across various wavelengths from ultraviolet to red.</p>","PeriodicalId":18966,"journal":{"name":"Nanomaterials","volume":"14 23","pages":""},"PeriodicalIF":4.4000,"publicationDate":"2024-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Ga<sub>2</sub>O<sub>3</sub>-Based Optoelectronic Memristor and Memcapacitor Synapse for In-Memory Sensing and Computing Applications.\",\"authors\":\"Hye Jin Lee, Jeong-Hyeon Kim, Seung Hun Lee, Sung-Nam Lee\",\"doi\":\"10.3390/nano14231972\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p><p>This study presents the fabrication and characterization of a dual-functional Pt/Ga<sub>2</sub>O<sub>3</sub>/Pt optoelectronic synaptic device, capable of operating as both a memristor and a memcapacitor. We detail the optimized radio frequency (RF) sputtering parameters, including a base pressure of 8.7 × 10<sup>-7</sup> Torr, RF power of 100 W, working pressure of 3 mTorr, and the use of high-purity Ga<sub>2</sub>O<sub>3</sub> and Pt targets. These precisely controlled conditions facilitated the formation of an amorphous Ga<sub>2</sub>O<sub>3</sub> thin film, as confirmed by XRD and AFM analyses, which demonstrated notable optical and electrical properties, including light absorption properties in the visible spectrum. The device demonstrated distinct resistive and capacitive switching behaviors, with memory characteristics highly dependent on the wavelength of the applied light. Ultraviolet (365 nm) exposure facilitated long-term memory retention, while visible light (660 nm) supported short-term memory behavior. Paired-pulse facilitation (PPF) measurements revealed that capacitance showed slower decay rates than EPSC, suggesting a more stable memory performance due to the dynamics of carrier trapping and detrapping at the insulator interface. Learning simulations further highlighted the efficiency of these devices, with improved memory retention upon repeated exposure to UV light pulses. Visual encoding simulations on a 3 × 3 pixel array also demonstrated effective multi-level memory storage using varying light intensities. These findings suggest that Ga<sub>2</sub>O<sub>3</sub>-based memristor and memcapacitor devices have significant potential for neuromorphic applications, offering tunable memory performance across various wavelengths from ultraviolet to red.</p>\",\"PeriodicalId\":18966,\"journal\":{\"name\":\"Nanomaterials\",\"volume\":\"14 23\",\"pages\":\"\"},\"PeriodicalIF\":4.4000,\"publicationDate\":\"2024-12-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Nanomaterials\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.3390/nano14231972\",\"RegionNum\":3,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"CHEMISTRY, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nanomaterials","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.3390/nano14231972","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
Ga2O3-Based Optoelectronic Memristor and Memcapacitor Synapse for In-Memory Sensing and Computing Applications.
This study presents the fabrication and characterization of a dual-functional Pt/Ga2O3/Pt optoelectronic synaptic device, capable of operating as both a memristor and a memcapacitor. We detail the optimized radio frequency (RF) sputtering parameters, including a base pressure of 8.7 × 10-7 Torr, RF power of 100 W, working pressure of 3 mTorr, and the use of high-purity Ga2O3 and Pt targets. These precisely controlled conditions facilitated the formation of an amorphous Ga2O3 thin film, as confirmed by XRD and AFM analyses, which demonstrated notable optical and electrical properties, including light absorption properties in the visible spectrum. The device demonstrated distinct resistive and capacitive switching behaviors, with memory characteristics highly dependent on the wavelength of the applied light. Ultraviolet (365 nm) exposure facilitated long-term memory retention, while visible light (660 nm) supported short-term memory behavior. Paired-pulse facilitation (PPF) measurements revealed that capacitance showed slower decay rates than EPSC, suggesting a more stable memory performance due to the dynamics of carrier trapping and detrapping at the insulator interface. Learning simulations further highlighted the efficiency of these devices, with improved memory retention upon repeated exposure to UV light pulses. Visual encoding simulations on a 3 × 3 pixel array also demonstrated effective multi-level memory storage using varying light intensities. These findings suggest that Ga2O3-based memristor and memcapacitor devices have significant potential for neuromorphic applications, offering tunable memory performance across various wavelengths from ultraviolet to red.
期刊介绍:
Nanomaterials (ISSN 2076-4991) is an international and interdisciplinary scholarly open access journal. It publishes reviews, regular research papers, communications, and short notes that are relevant to any field of study that involves nanomaterials, with respect to their science and application. Thus, theoretical and experimental articles will be accepted, along with articles that deal with the synthesis and use of nanomaterials. Articles that synthesize information from multiple fields, and which place discoveries within a broader context, will be preferred. There is no restriction on the length of the papers. Our aim is to encourage scientists to publish their experimental and theoretical research in as much detail as possible. Full experimental or methodical details, or both, must be provided for research articles. Computed data or files regarding the full details of the experimental procedure, if unable to be published in a normal way, can be deposited as supplementary material. Nanomaterials is dedicated to a high scientific standard. All manuscripts undergo a rigorous reviewing process and decisions are based on the recommendations of independent reviewers.