{"title":"通过离子液体门控在 InP 纳米激光器中实现低能耗的可逆载流子调制。","authors":"Chia-Hung Wu, Chi-Wen Chen, Hung-Jung Shen, Hsiang-Yu Chuang, Hark Hoe Tan, Chennupati Jagadish, Tien-Chang Lu, Satoshi Ishii, Kuo-Ping Chen","doi":"10.1002/advs.202412340","DOIUrl":null,"url":null,"abstract":"<p><p>Nanoscale light sources are demanded vigorously due to rapid development in photonic integrated circuits (PICs). III-V semiconductor nanowire (NW) lasers have manifested themselves as indispensable components in this field, associated with their extremely compact footprint and ultra-high optical gain within the 1D cavity. In this study, the carrier concentrations of indium phosphide (InP) NWs are actively controlled to modify their emissive properties at room temperature. The InP NW lasers can achieve repetitive switching between photoluminescence (PL) and lasing with an extinction ratio of 22-fold by applying a gate voltage of 3 V using ionic liquid (IL) as a dielectric layer. IL brings forth ultra-high capacitance due to the nanometer-wide electric double layer (EDL) between interfaces, mapping out gating efficiency of ≈100-fold compared to the conventional bottom gate configurations. This IL-embedded nanolaser device can be a promising platform for the advanced integrated nanophotonic system.</p>","PeriodicalId":117,"journal":{"name":"Advanced Science","volume":" ","pages":"e2412340"},"PeriodicalIF":14.3000,"publicationDate":"2024-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Reversible Carrier Modulation in InP Nanolasers by Ionic Liquid Gating with Low Energy Consumption.\",\"authors\":\"Chia-Hung Wu, Chi-Wen Chen, Hung-Jung Shen, Hsiang-Yu Chuang, Hark Hoe Tan, Chennupati Jagadish, Tien-Chang Lu, Satoshi Ishii, Kuo-Ping Chen\",\"doi\":\"10.1002/advs.202412340\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p><p>Nanoscale light sources are demanded vigorously due to rapid development in photonic integrated circuits (PICs). III-V semiconductor nanowire (NW) lasers have manifested themselves as indispensable components in this field, associated with their extremely compact footprint and ultra-high optical gain within the 1D cavity. In this study, the carrier concentrations of indium phosphide (InP) NWs are actively controlled to modify their emissive properties at room temperature. The InP NW lasers can achieve repetitive switching between photoluminescence (PL) and lasing with an extinction ratio of 22-fold by applying a gate voltage of 3 V using ionic liquid (IL) as a dielectric layer. IL brings forth ultra-high capacitance due to the nanometer-wide electric double layer (EDL) between interfaces, mapping out gating efficiency of ≈100-fold compared to the conventional bottom gate configurations. This IL-embedded nanolaser device can be a promising platform for the advanced integrated nanophotonic system.</p>\",\"PeriodicalId\":117,\"journal\":{\"name\":\"Advanced Science\",\"volume\":\" \",\"pages\":\"e2412340\"},\"PeriodicalIF\":14.3000,\"publicationDate\":\"2024-12-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Advanced Science\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.1002/advs.202412340\",\"RegionNum\":1,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"CHEMISTRY, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Science","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1002/advs.202412340","RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
Reversible Carrier Modulation in InP Nanolasers by Ionic Liquid Gating with Low Energy Consumption.
Nanoscale light sources are demanded vigorously due to rapid development in photonic integrated circuits (PICs). III-V semiconductor nanowire (NW) lasers have manifested themselves as indispensable components in this field, associated with their extremely compact footprint and ultra-high optical gain within the 1D cavity. In this study, the carrier concentrations of indium phosphide (InP) NWs are actively controlled to modify their emissive properties at room temperature. The InP NW lasers can achieve repetitive switching between photoluminescence (PL) and lasing with an extinction ratio of 22-fold by applying a gate voltage of 3 V using ionic liquid (IL) as a dielectric layer. IL brings forth ultra-high capacitance due to the nanometer-wide electric double layer (EDL) between interfaces, mapping out gating efficiency of ≈100-fold compared to the conventional bottom gate configurations. This IL-embedded nanolaser device can be a promising platform for the advanced integrated nanophotonic system.
期刊介绍：
Advanced Science is a prestigious open access journal that focuses on interdisciplinary research in materials science, physics, chemistry, medical and life sciences, and engineering. The journal aims to promote cutting-edge research by employing a rigorous and impartial review process. It is committed to presenting research articles with the highest quality production standards, ensuring maximum accessibility of top scientific findings. With its vibrant and innovative publication platform, Advanced Science seeks to revolutionize the dissemination and organization of scientific knowledge.
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