击穿电压超过 3 kV 的超宽带隙金刚石/ε-Ga2O3 异质结 pn 二极管

IF 9.1 1区材料科学 Q1 CHEMISTRY, MULTIDISCIPLINARY

Nano Letters Pub Date : 2024-12-16 DOI:10.1021/acs.nanolett.4c05446

Jianguo Zhang, Ningtao Liu, Li Chen, Xun Yang, Haizhong Guo, Zefeng Wang, Ming-Qian Yuan, Xue-Jun Yan, Jianqun Yang, Xingji Li, Chongxin Shan, Jichun Ye, Wenrui Zhang

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引用次数: 0

摘要

基于超宽带隙（UWBG）半导体的稳健双极器件是先进电力电子器件的迫切需求。由于在同一UWBG材料中缺乏有效的双极掺杂，异质结策略一直是制造双极器件的主流方法。在这里，我们展示了一种独特的异质结设计，将p型金刚石和n型ε-Ga2O3集成在一起，实现了超过3000 V的显著击穿电压。尽管晶格不匹配，但在金刚石衬底上建立了异质外延ε-Ga2O3薄膜，形成了与C-O-Ga键合的原子锋利界面，使o端金刚石表面能够构建有效的整流异质结。超高质量的界面加上轻掺杂的金刚石作为漂移层，大大削弱了功率二极管中常见的电场拥挤效应，提供了一种经济有效的热管理途径。该研究提供了一种高效的异质结设计，以实现UWBG半导体在超高功率应用中的潜力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

Ultrawide Bandgap Diamond/ε-Ga2O3 Heterojunction pn Diodes with Breakdown Voltages over 3 kV

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Ultrawide Bandgap Diamond/ε-Ga2O3 Heterojunction pn Diodes with Breakdown Voltages over 3 kV

Robust bipolar devices based on exclusively ultrawide bandgap (UWBG) semiconductors are highly desired for advanced power electronics. The heterojunction strategy has been a prevailing method for fabricating a bipolar device due to the lack of effective bipolar doping in the same UWBG material. Here, we demonstrate a unique heterojunction design integrating the p-type diamond and n-type ε-Ga₂O₃ that achieves remarkable breakdown voltages surpassing 3000 V. Despite the lattice mismatch, the heteroepitaxial ε-Ga₂O₃ film is established on the diamond substrate, forming an atomically sharp interface with C–O–Ga bonding and enabling the O-terminated diamond surface for constructing an effective rectifying heterojunction. The ultra-high-quality interface, together with the lightly doped diamond as the drift layer, largely weakens the commonly met electric field crowding effect in power diodes and provides a cost-effective thermal management route. This study provides an efficient heterojunction design to realize the potential of UWBG semiconductors for ultra-high-power applications.

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来源期刊

Nano Letters 工程技术-材料科学：综合

CiteScore

16.80

自引率

2.80%

发文量

1182

审稿时长

1.4 months

期刊介绍： Nano Letters serves as a dynamic platform for promptly disseminating original results in fundamental, applied, and emerging research across all facets of nanoscience and nanotechnology. A pivotal criterion for inclusion within Nano Letters is the convergence of at least two different areas or disciplines, ensuring a rich interdisciplinary scope. The journal is dedicated to fostering exploration in diverse areas, including: - Experimental and theoretical findings on physical, chemical, and biological phenomena at the nanoscale - Synthesis, characterization, and processing of organic, inorganic, polymer, and hybrid nanomaterials through physical, chemical, and biological methodologies - Modeling and simulation of synthetic, assembly, and interaction processes - Realization of integrated nanostructures and nano-engineered devices exhibiting advanced performance - Applications of nanoscale materials in living and environmental systems Nano Letters is committed to advancing and showcasing groundbreaking research that intersects various domains, fostering innovation and collaboration in the ever-evolving field of nanoscience and nanotechnology.