G. Rajasekar, A. Venkatesan, P. Rekha, S. Reena Devi, S. Usharani, A. Bhaskaran, S. Mohandoss, S. Sudhahar
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引用次数: 0
摘要
缓慢冷却可以成功生长硼酸锂(LBOB)金属有机单晶。采用单晶XRD分析了生长的LBOB晶体的晶格胞参数。LBOB单晶属于具有空间群Pbca的正交体系,计算参数为a = 6.43 Å, b = 7.58 Å, c = 13.22 Å。通过高分辨率x射线衍射(HRXRD)摇摆曲线测量分析了生长晶体的结晶完善性。紫外可见光谱分析测定了生长的LBOB晶体的带隙和透过率(%)。从紫外可见光谱观察,LBOB晶体的下限截止波长为231 nm,带隙值为5.1 eV。采用TG-DTA分析研究了LBOB化合物的热稳定性。激光诱导损伤阈值研究表明,生长的LBOB晶体具有优异的抗激光辐射能力,激光损伤阈值高达9.74 GW/cm2。采用维氏硬度计测定LBOB晶体的硬度值。采用Z-scan技术验证三阶非线性敏感性为(χ3) = 3.0371 X 10-11 esu。
Investigation on synthesis, growth, optical, thermal, etching, and mechanical characterization of lithium bis (oxalato) borate organo-metallic single crystal
Slow cooling was allowed for the successful growth of metal–organic single crystal of lithium bis (oxalato) borate (LBOB). The single crystal XRD was used to analysis the lattice cell parameters of grown LBOB crystal. The LBOB single crystal belongs to orthorhombic system with space group Pbca and calculated parameters are found to be a = 6.43 Å, b = 7.58 Å, and c = 13.22 Å. The crystalline perfection of the grown crystal was analyzed by high-resolution X-ray diffraction (HRXRD) rocking curve measurement. UV–Vis spectral analysis was used to determine the grown LBOB crystal’s band gap and transmittance (%) value. From the observed UV–Vis spectrum, the lower cut-off wavelength and band gap values of LBOB crystal are 231 nm and 5.1 eV, respectively. Thermal stability of LBOB compound was studied using TG–DTA analysis. The laser-induced damage threshold study revealed that the grown LBOB crystal possesses excellent resistance to laser radiation with a high laser damage threshold value up to 9.74 GW/cm2. Vickers hardness tester was used to examine the LBOB crystal’s hardness value. Z-scan technique was employed to clarify that the third-order nonlinear susceptibility was found to be (χ3) = 3.0371 X 10–11 esu.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.