{"title":"通过降低 Bi2O3 的声子能量来增强碲玻璃中 Er3+ 的近红外发射","authors":"Jiawei Liu, Pengwei Yin, Xia Shao, Yiguang Jiang, Guoying Zhao","doi":"10.1007/s10854-024-14024-y","DOIUrl":null,"url":null,"abstract":"<div><p>Erbium ions, significant rare-earth ions used in the preparation of high-power near-infrared, have extensive applications in near-infrared lasers, fiber amplifiers, and radar. As a heavy metal glass, tellurite glass boasts stable physical and chemical properties, high mechanical strength, a large refractive index, and high solubility of rare-earth ions. Consequently, in this study, we modulate the tellurite glass grid to enhance the intensity of near-infrared emission from erbium ions in the classic TeO<sub>2</sub>–ZnO–Na<sub>2</sub>O (TZN) glass system. The local coordination field environment of erbium ions is optimized by the alternating grouping of bismuth oxide with low phonon energies. Thermal analysis indicates that the addition of an appropriate amount of bismuth oxide can improve the thermal stability of the glass and effectively reduce the content of OH<sup>−</sup> in the glass system. Upon replacing TeO<sub>2</sub> with Bi<sub>2</sub>O<sub>3</sub>, the 1.5 μm emission of erbium ions is enhanced by 38.9%, with a maximum emission cross section of 0.84 × 10<sup>–20</sup> cm<sup>2</sup>. Raman spectra reveal that after the introduction of bismuth oxide, most of the vibration modes of the system shift to low wavenumber sidebands, effectively suppressing the non-radiative transition in the <sup>4</sup>I<sub>13/2</sub> energy level. The full width at half maximum (FWHM) × emission cross section (σ<sub>e</sub>) reaches its maximum value of 58.958 when the concentration of Bi<sub>2</sub>O<sub>3</sub> replacing Na<sub>2</sub>O is 6 mol%, which is greater than other glasses such as tellurite, silicate, and phosphate glasses. All these results suggest that the newly created bismuth tellurite glass, characterized by excellent fiber-forming properties, has potential applications for near-infrared lasers.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"35 36","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2024-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Enhancement of near-infrared emission of Er3+ in tellurite glasses by reducing the phonon energy with Bi2O3 content\",\"authors\":\"Jiawei Liu, Pengwei Yin, Xia Shao, Yiguang Jiang, Guoying Zhao\",\"doi\":\"10.1007/s10854-024-14024-y\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Erbium ions, significant rare-earth ions used in the preparation of high-power near-infrared, have extensive applications in near-infrared lasers, fiber amplifiers, and radar. As a heavy metal glass, tellurite glass boasts stable physical and chemical properties, high mechanical strength, a large refractive index, and high solubility of rare-earth ions. Consequently, in this study, we modulate the tellurite glass grid to enhance the intensity of near-infrared emission from erbium ions in the classic TeO<sub>2</sub>–ZnO–Na<sub>2</sub>O (TZN) glass system. The local coordination field environment of erbium ions is optimized by the alternating grouping of bismuth oxide with low phonon energies. Thermal analysis indicates that the addition of an appropriate amount of bismuth oxide can improve the thermal stability of the glass and effectively reduce the content of OH<sup>−</sup> in the glass system. Upon replacing TeO<sub>2</sub> with Bi<sub>2</sub>O<sub>3</sub>, the 1.5 μm emission of erbium ions is enhanced by 38.9%, with a maximum emission cross section of 0.84 × 10<sup>–20</sup> cm<sup>2</sup>. Raman spectra reveal that after the introduction of bismuth oxide, most of the vibration modes of the system shift to low wavenumber sidebands, effectively suppressing the non-radiative transition in the <sup>4</sup>I<sub>13/2</sub> energy level. The full width at half maximum (FWHM) × emission cross section (σ<sub>e</sub>) reaches its maximum value of 58.958 when the concentration of Bi<sub>2</sub>O<sub>3</sub> replacing Na<sub>2</sub>O is 6 mol%, which is greater than other glasses such as tellurite, silicate, and phosphate glasses. All these results suggest that the newly created bismuth tellurite glass, characterized by excellent fiber-forming properties, has potential applications for near-infrared lasers.</p></div>\",\"PeriodicalId\":646,\"journal\":{\"name\":\"Journal of Materials Science: Materials in Electronics\",\"volume\":\"35 36\",\"pages\":\"\"},\"PeriodicalIF\":2.8000,\"publicationDate\":\"2024-12-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Materials Science: Materials in Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s10854-024-14024-y\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-024-14024-y","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Enhancement of near-infrared emission of Er3+ in tellurite glasses by reducing the phonon energy with Bi2O3 content
Erbium ions, significant rare-earth ions used in the preparation of high-power near-infrared, have extensive applications in near-infrared lasers, fiber amplifiers, and radar. As a heavy metal glass, tellurite glass boasts stable physical and chemical properties, high mechanical strength, a large refractive index, and high solubility of rare-earth ions. Consequently, in this study, we modulate the tellurite glass grid to enhance the intensity of near-infrared emission from erbium ions in the classic TeO2–ZnO–Na2O (TZN) glass system. The local coordination field environment of erbium ions is optimized by the alternating grouping of bismuth oxide with low phonon energies. Thermal analysis indicates that the addition of an appropriate amount of bismuth oxide can improve the thermal stability of the glass and effectively reduce the content of OH− in the glass system. Upon replacing TeO2 with Bi2O3, the 1.5 μm emission of erbium ions is enhanced by 38.9%, with a maximum emission cross section of 0.84 × 10–20 cm2. Raman spectra reveal that after the introduction of bismuth oxide, most of the vibration modes of the system shift to low wavenumber sidebands, effectively suppressing the non-radiative transition in the 4I13/2 energy level. The full width at half maximum (FWHM) × emission cross section (σe) reaches its maximum value of 58.958 when the concentration of Bi2O3 replacing Na2O is 6 mol%, which is greater than other glasses such as tellurite, silicate, and phosphate glasses. All these results suggest that the newly created bismuth tellurite glass, characterized by excellent fiber-forming properties, has potential applications for near-infrared lasers.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.