Dawei Liu, Rui Wang, Chengyu Jia, Dingwei Wang, Zhiguo Zhao, Jiaqi Pan, Lei Shi
{"title":"通过超薄氧化镍过渡层的电位调节实现增强光伏响应的透明 CuI/InGaZnO4 pn 结","authors":"Dawei Liu, Rui Wang, Chengyu Jia, Dingwei Wang, Zhiguo Zhao, Jiaqi Pan, Lei Shi","doi":"10.1007/s10854-024-14029-7","DOIUrl":null,"url":null,"abstract":"<div><p>The transparent device in ultrathin NiO layer modified CuI/InGaZnO<sub>4</sub> pn junction is prepared via sputtering-in situ iodization method. The CuI/NiO/InGaZnO<sub>4</sub> exhibits transmittance of ~ 85–90%, photovoltaic enhancement of ~ 1.3 × 10<sup>3</sup>-folds, stable output in 15 days. It can be mainly attributed to the ultrathin NiO layer. Besides appropriate Fermi level can alleviate potential gradient, the ultrathin NiO layer, with surface optimization and p-type carrier injection via Cu<sup>+</sup>/Cu<sup>2+</sup>, Ni<sup>2+</sup>/Ni<sup>3+</sup>-interstitial oxygen synergism, as well as high transparency by wide band gap, can improve the photo-generated carrier kinetic equilibrium for achieving PCE-transparency balance, while exhibiting good stability via the all inorganic structures, making them being competitive in transparent devices.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"35 36","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2024-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"The transparent CuI/InGaZnO4 pn junction toward enhanced photovoltaic response via potential regulation of ultrathin NiO transition layer\",\"authors\":\"Dawei Liu, Rui Wang, Chengyu Jia, Dingwei Wang, Zhiguo Zhao, Jiaqi Pan, Lei Shi\",\"doi\":\"10.1007/s10854-024-14029-7\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>The transparent device in ultrathin NiO layer modified CuI/InGaZnO<sub>4</sub> pn junction is prepared via sputtering-in situ iodization method. The CuI/NiO/InGaZnO<sub>4</sub> exhibits transmittance of ~ 85–90%, photovoltaic enhancement of ~ 1.3 × 10<sup>3</sup>-folds, stable output in 15 days. It can be mainly attributed to the ultrathin NiO layer. Besides appropriate Fermi level can alleviate potential gradient, the ultrathin NiO layer, with surface optimization and p-type carrier injection via Cu<sup>+</sup>/Cu<sup>2+</sup>, Ni<sup>2+</sup>/Ni<sup>3+</sup>-interstitial oxygen synergism, as well as high transparency by wide band gap, can improve the photo-generated carrier kinetic equilibrium for achieving PCE-transparency balance, while exhibiting good stability via the all inorganic structures, making them being competitive in transparent devices.</p></div>\",\"PeriodicalId\":646,\"journal\":{\"name\":\"Journal of Materials Science: Materials in Electronics\",\"volume\":\"35 36\",\"pages\":\"\"},\"PeriodicalIF\":2.8000,\"publicationDate\":\"2024-12-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Materials Science: Materials in Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s10854-024-14029-7\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-024-14029-7","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
The transparent CuI/InGaZnO4 pn junction toward enhanced photovoltaic response via potential regulation of ultrathin NiO transition layer
The transparent device in ultrathin NiO layer modified CuI/InGaZnO4 pn junction is prepared via sputtering-in situ iodization method. The CuI/NiO/InGaZnO4 exhibits transmittance of ~ 85–90%, photovoltaic enhancement of ~ 1.3 × 103-folds, stable output in 15 days. It can be mainly attributed to the ultrathin NiO layer. Besides appropriate Fermi level can alleviate potential gradient, the ultrathin NiO layer, with surface optimization and p-type carrier injection via Cu+/Cu2+, Ni2+/Ni3+-interstitial oxygen synergism, as well as high transparency by wide band gap, can improve the photo-generated carrier kinetic equilibrium for achieving PCE-transparency balance, while exhibiting good stability via the all inorganic structures, making them being competitive in transparent devices.
期刊介绍：
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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