具有 NLO 活性的 L-色氨酸三(4-硝基苯酚)单晶的生长、光学、热学和介电特性分析

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
B. Dhanalakshmi, B. Padmadevi
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引用次数: 0

摘要

本文讨论了有机非线性光学(NLO)单晶l -色氨酸三(4-硝基酚)(LTT4NP)的生长和表征。采用慢速溶剂蒸发法制备了尺寸为4 × 3 × 1 mm3的lt4np晶体。单晶XRD测试证明该晶体属于单斜晶系,具有非中心对称空间群P21。光吸收和透射研究表明,在364 ~ 1100 nm范围内具有理想的透明窗口,具有3.58 eV的宽带隙。该材料可见光到红外区的折射率为2.111 ~ 2.112,光导低于3.5 eV,表明光场与材料的相互作用较弱。晶体的介电色散和在光学频率下的低介电损耗表明了电光应用的积极属性。在100 kHz以上观察到高色散的交流电导率,表明在较高频率下存在强极化机制。通过Kurtz Perry技术估计,二次谐波产生(SHG)效率是KDP的2.2倍。该晶体的热稳定性可达146°C,机械稳定性可达30 g,易于制造和加工。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Growth, optical, thermal and dielectric characterization of NLO active L-Tryptophan tris (4-nitrophenol) single crystals

Growth, optical, thermal and dielectric characterization of NLO active L-Tryptophan tris (4-nitrophenol) single crystals

This report discusses growth and characterization of an organic nonlinear optical (NLO) single crystal L-Tryptophan tris (4-nitrophenol) (LTT4NP). Good optical quality crystals of LTT4NP with dimension 4 × 3 × 1 mm3 were harvested by slow solvent evaporation method. Single crystal XRD measurements proved that the crystal belongs to monoclinic system with non-centrosymmetric space group P21. The optical absorption and transmission studies showed a desirable transparency window from 364 to 1100 nm with a wide optical band gap of 3.58 eV. The study explored a low refractive index of 2.111–2.112 from visible to IR region and low optical conductance below 3.5 eV indicating weak interaction of optical field with the material. The dielectric dispersion of the crystal and low dielectric loss at optical frequencies suggested positive attributes towards electro-optic applications. A highly dispersive a.c. conductivity was observed above 100 kHz which indicated strong polarization mechanism in higher frequencies. The Second Harmonic Generation (SHG) efficiency was estimated to be 2.2 times of KDP by Kurtz Perry technique. The crystal was found to be thermally stable upto 146 °C and mechanically stable upto a load of 30 g favouring the easy fabrication and processing.

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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