Patrick Wiegand;Sebastian Simmich;Fatih Ilgaz;Franz Faupel;Benjamin Spetzler;Robert Rieger
{"title":"带MEMS Delta-E磁场传感器的ASIC电流复用放大器","authors":"Patrick Wiegand;Sebastian Simmich;Fatih Ilgaz;Franz Faupel;Benjamin Spetzler;Robert Rieger","doi":"10.1109/OJCAS.2024.3472124","DOIUrl":null,"url":null,"abstract":"An application specific integrated circuit (ASIC) and a custom-made microelectromechanical system (MEMS) sensor are presented, designed to function together as a sensor system for measuring low amplitude low frequency magnetic fields. The MEMS system comprises several free-standing double-wing magnetoelectric resonators with a size of \n<inline-formula> <tex-math>$900~\\mu $ </tex-math></inline-formula>\nm x \n<inline-formula> <tex-math>$150~\\mu $ </tex-math></inline-formula>\nm to measure alternating magnetic fields in the sub-kilohertz regime. It utilizes piezolelectric (AlN) and magnetostrictive (FeCoSiB) layers to exploit the delta-E effect for magnetic field sensing. On the ASIC a three-channel current-reuse amplifier with lateral bipolar transistors in the input stage is implemented occupying a chip area of 0.0864 mm2. Measurements demonstrate a voltage gain of 40 dB with a 3-dB bandwidth of 75 kHz and an input referred noise floor of 8 nV/\n<inline-formula> <tex-math>$\\surd $ </tex-math></inline-formula>\nHz while consuming \n<inline-formula> <tex-math>$199~\\mu $ </tex-math></inline-formula>\nW per channel. The sensor system is capable of detecting magnetic fields with a limit of detection (LOD) of 16 nT/\n<inline-formula> <tex-math>$\\surd $ </tex-math></inline-formula>\nHz for single sensor elements. By operating three sensor elements in parallel, one on each amplifier channel, the LOD is further reduced to 10 nT/\n<inline-formula> <tex-math>$\\surd $ </tex-math></inline-formula>\nHz. Owing to the high reproducibility of the sensor elements, this improvement in the LOD is close to the ideal value of \n<inline-formula> <tex-math>$\\surd 3$ </tex-math></inline-formula>\n. The results imply that the system can be scaled to large numbers of sensor elements without principle obstacles.","PeriodicalId":93442,"journal":{"name":"IEEE open journal of circuits and systems","volume":"5 ","pages":"398-407"},"PeriodicalIF":2.4000,"publicationDate":"2024-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10801234","citationCount":"0","resultStr":"{\"title\":\"ASIC Current-Reuse Amplifier With MEMS Delta-E Magnetic Field Sensors\",\"authors\":\"Patrick Wiegand;Sebastian Simmich;Fatih Ilgaz;Franz Faupel;Benjamin Spetzler;Robert Rieger\",\"doi\":\"10.1109/OJCAS.2024.3472124\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An application specific integrated circuit (ASIC) and a custom-made microelectromechanical system (MEMS) sensor are presented, designed to function together as a sensor system for measuring low amplitude low frequency magnetic fields. The MEMS system comprises several free-standing double-wing magnetoelectric resonators with a size of \\n<inline-formula> <tex-math>$900~\\\\mu $ </tex-math></inline-formula>\\nm x \\n<inline-formula> <tex-math>$150~\\\\mu $ </tex-math></inline-formula>\\nm to measure alternating magnetic fields in the sub-kilohertz regime. It utilizes piezolelectric (AlN) and magnetostrictive (FeCoSiB) layers to exploit the delta-E effect for magnetic field sensing. On the ASIC a three-channel current-reuse amplifier with lateral bipolar transistors in the input stage is implemented occupying a chip area of 0.0864 mm2. Measurements demonstrate a voltage gain of 40 dB with a 3-dB bandwidth of 75 kHz and an input referred noise floor of 8 nV/\\n<inline-formula> <tex-math>$\\\\surd $ </tex-math></inline-formula>\\nHz while consuming \\n<inline-formula> <tex-math>$199~\\\\mu $ </tex-math></inline-formula>\\nW per channel. The sensor system is capable of detecting magnetic fields with a limit of detection (LOD) of 16 nT/\\n<inline-formula> <tex-math>$\\\\surd $ </tex-math></inline-formula>\\nHz for single sensor elements. By operating three sensor elements in parallel, one on each amplifier channel, the LOD is further reduced to 10 nT/\\n<inline-formula> <tex-math>$\\\\surd $ </tex-math></inline-formula>\\nHz. Owing to the high reproducibility of the sensor elements, this improvement in the LOD is close to the ideal value of \\n<inline-formula> <tex-math>$\\\\surd 3$ </tex-math></inline-formula>\\n. The results imply that the system can be scaled to large numbers of sensor elements without principle obstacles.\",\"PeriodicalId\":93442,\"journal\":{\"name\":\"IEEE open journal of circuits and systems\",\"volume\":\"5 \",\"pages\":\"398-407\"},\"PeriodicalIF\":2.4000,\"publicationDate\":\"2024-12-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10801234\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE open journal of circuits and systems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10801234/\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE open journal of circuits and systems","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/10801234/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
ASIC Current-Reuse Amplifier With MEMS Delta-E Magnetic Field Sensors
An application specific integrated circuit (ASIC) and a custom-made microelectromechanical system (MEMS) sensor are presented, designed to function together as a sensor system for measuring low amplitude low frequency magnetic fields. The MEMS system comprises several free-standing double-wing magnetoelectric resonators with a size of
$900~\mu $
m x
$150~\mu $
m to measure alternating magnetic fields in the sub-kilohertz regime. It utilizes piezolelectric (AlN) and magnetostrictive (FeCoSiB) layers to exploit the delta-E effect for magnetic field sensing. On the ASIC a three-channel current-reuse amplifier with lateral bipolar transistors in the input stage is implemented occupying a chip area of 0.0864 mm2. Measurements demonstrate a voltage gain of 40 dB with a 3-dB bandwidth of 75 kHz and an input referred noise floor of 8 nV/
$\surd $
Hz while consuming
$199~\mu $
W per channel. The sensor system is capable of detecting magnetic fields with a limit of detection (LOD) of 16 nT/
$\surd $
Hz for single sensor elements. By operating three sensor elements in parallel, one on each amplifier channel, the LOD is further reduced to 10 nT/
$\surd $
Hz. Owing to the high reproducibility of the sensor elements, this improvement in the LOD is close to the ideal value of
$\surd 3$
. The results imply that the system can be scaled to large numbers of sensor elements without principle obstacles.