IF 7.3 1区 工程技术 Q1 INSTRUMENTS & INSTRUMENTATION
Michiel Gidts, Wei-Fan Hsu, Maria Recaman Payo, Shaswat Kushwaha, Frederik Ceyssens, Dominiek Reynaerts, Jean-Pierre Locquet, Michael Kraft, Chen Wang
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引用次数: 0

摘要

掺杂铬的 V2O3 薄膜在室温下随着受控外延应变而产生巨大的电阻率变化,这是应变导致的渐进式莫特金属-绝缘体相变的结果。这种新颖的压阻传导原理使掺杂铬的 V2O3 薄膜成为一种极具吸引力的压阻材料。为了研究掺杂铬的 V2O3 薄膜在 MEMS 传感器应用中的压阻系数,我们测量了不同取向的掺杂铬的 V2O3 薄膜压阻器在外部应变变化时的电阻变化。在室温下,纵向量规系数为 222,横向量规系数为 217,发现了各向同性的压阻系数。这使得掺杂铬的 V2O3 薄膜压阻器的电阻变化与应力取向无关,可用于新型传感器应用。为了证明这种新型压阻材料在传感器应用中的集成性,我们设计、制造并表征了一种带有掺铬 V2O3 薄膜压阻器的微机械压力传感器。在 20 °C 时,测得灵敏度、偏移量、灵敏度温度系数和偏移量温度系数分别为 21.81 mV/V/bar、-25.73 mV/V、-0.076 mV/V/bar/°C 和 0.182 mV/V/°C。这项工作为进一步研究这种在 MEMS 传感器应用中大有可为的压阻传导原理铺平了道路。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Study on the piezoresistivity of Cr-doped V2O3 thin film for MEMS sensor applications.

Cr-doped V2O3 thin film shows a huge resistivity change with controlled epitaxial strain at room temperature as a result of a gradual Mott metal-insulator phase transition with strain. This novel piezoresistive transduction principle makes Cr-doped V2O3 thin film an appealing piezoresistive material. To investigate the piezoresistivity of Cr-doped V2O3 thin film for implementation in MEMS sensor applications, the resistance change of differently orientated Cr-doped V2O3 thin film piezoresistors with external strain change was measured. With a longitudinal gauge factor of 222 and a transversal gauge factor of 217 at room temperature, isotropic piezoresistivity coefficients were discovered. This results in a significant orientation-independent resistance change with stress for Cr-doped V2O3 thin film piezoresistors, potentially useful for new sensor applications. To demonstrate the integration of this new piezoresistive material in sensor applications, a micromachined pressure sensor with Cr-doped V2O3 thin film piezoresistors was designed, fabricated and characterized. At 20 °C, a sensitivity, offset, temperature coefficient of sensitivity and temperature coefficient of offset of 21.81 mV/V/bar, -25.73 mV/V, -0.076 mV/V/bar/°C and 0.182 mV/V/°C, respectively, were measured. This work paves the way for further research on this promising piezoresistive transduction principle for use in MEMS sensor applications.

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来源期刊
Microsystems & Nanoengineering
Microsystems & Nanoengineering Materials Science-Materials Science (miscellaneous)
CiteScore
12.00
自引率
3.80%
发文量
123
审稿时长
20 weeks
期刊介绍: Microsystems & Nanoengineering is a comprehensive online journal that focuses on the field of Micro and Nano Electro Mechanical Systems (MEMS and NEMS). It provides a platform for researchers to share their original research findings and review articles in this area. The journal covers a wide range of topics, from fundamental research to practical applications. Published by Springer Nature, in collaboration with the Aerospace Information Research Institute, Chinese Academy of Sciences, and with the support of the State Key Laboratory of Transducer Technology, it is an esteemed publication in the field. As an open access journal, it offers free access to its content, allowing readers from around the world to benefit from the latest developments in MEMS and NEMS.
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