基于无铅过氧化铋异质结的高性能紫外线光电探测器

IF 1.9 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY
Peng Wang, Zhenfu Pei, Qilin Dai, Hongshang Peng, Libo Fan, Zhi Zheng
{"title":"基于无铅过氧化铋异质结的高性能紫外线光电探测器","authors":"Peng Wang,&nbsp;Zhenfu Pei,&nbsp;Qilin Dai,&nbsp;Hongshang Peng,&nbsp;Libo Fan,&nbsp;Zhi Zheng","doi":"10.1007/s12034-024-03338-6","DOIUrl":null,"url":null,"abstract":"<div><p>Metal-based halide perovskite materials are very promising for high-performance optoelectronic devices due to their extraordinary photoelectric properties. Bismuth-based perovskites are believed to replace the toxic Pb-based perovskites in optoelectronics due to their remarkable stability, and nontoxic properties. Here, we report self-powered Cs<sub>3</sub>Bi<sub>2</sub>Br<sub>9</sub>/SnO<sub>2</sub> heterojunction ultraviolet (UV) photodetectors with excellent photoelectric detectivity. The optimized device exhibits an excellent ON/OFF ratio of 5.5 <span>\\(\\times\\)</span> 10<sup>3</sup>, a large responsivity of 25 mA/W, and a detectivity of 6.9 <span>\\(\\times\\)</span> 10<sup>11</sup> Jones at 0 V bias, which is much better than other bismuth halide perovskites with the same structure. In addition, our photodetector performance of the optimized device exhibits almost no change even after 30 days of exposure under an ambient environment, indicating excellent stability. Sulphur is introduced to Cs<sub>3</sub>Bi<sub>2</sub>Br<sub>9</sub> via bismuth ethyl-xanthogenate (Bi(Xt)<sub>3</sub>) to further improve the device performance. Detectivity of 9.2 × 10<sup>11</sup> Jones and responsivity of 37 mAW<sup>–1</sup> are achieved, which shows the best performance for bismuth-perovskite photodetector in this work. This work provides a method for fabricating high-performance and stable bismuth-based perovskite photodetectors with perovskite/inorganic heterojunctions.</p></div>","PeriodicalId":502,"journal":{"name":"Bulletin of Materials Science","volume":"48 1","pages":""},"PeriodicalIF":1.9000,"publicationDate":"2024-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"High performance ultraviolet photodetector based on lead-free bismuth perovskite heterojunction\",\"authors\":\"Peng Wang,&nbsp;Zhenfu Pei,&nbsp;Qilin Dai,&nbsp;Hongshang Peng,&nbsp;Libo Fan,&nbsp;Zhi Zheng\",\"doi\":\"10.1007/s12034-024-03338-6\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Metal-based halide perovskite materials are very promising for high-performance optoelectronic devices due to their extraordinary photoelectric properties. Bismuth-based perovskites are believed to replace the toxic Pb-based perovskites in optoelectronics due to their remarkable stability, and nontoxic properties. Here, we report self-powered Cs<sub>3</sub>Bi<sub>2</sub>Br<sub>9</sub>/SnO<sub>2</sub> heterojunction ultraviolet (UV) photodetectors with excellent photoelectric detectivity. The optimized device exhibits an excellent ON/OFF ratio of 5.5 <span>\\\\(\\\\times\\\\)</span> 10<sup>3</sup>, a large responsivity of 25 mA/W, and a detectivity of 6.9 <span>\\\\(\\\\times\\\\)</span> 10<sup>11</sup> Jones at 0 V bias, which is much better than other bismuth halide perovskites with the same structure. In addition, our photodetector performance of the optimized device exhibits almost no change even after 30 days of exposure under an ambient environment, indicating excellent stability. Sulphur is introduced to Cs<sub>3</sub>Bi<sub>2</sub>Br<sub>9</sub> via bismuth ethyl-xanthogenate (Bi(Xt)<sub>3</sub>) to further improve the device performance. Detectivity of 9.2 × 10<sup>11</sup> Jones and responsivity of 37 mAW<sup>–1</sup> are achieved, which shows the best performance for bismuth-perovskite photodetector in this work. This work provides a method for fabricating high-performance and stable bismuth-based perovskite photodetectors with perovskite/inorganic heterojunctions.</p></div>\",\"PeriodicalId\":502,\"journal\":{\"name\":\"Bulletin of Materials Science\",\"volume\":\"48 1\",\"pages\":\"\"},\"PeriodicalIF\":1.9000,\"publicationDate\":\"2024-12-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Bulletin of Materials Science\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s12034-024-03338-6\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Bulletin of Materials Science","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1007/s12034-024-03338-6","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

摘要

金属卤化物类包晶石材料具有非凡的光电特性,因此在高性能光电设备中大有可为。铋基包晶石因其卓越的稳定性和无毒性,被认为可以在光电领域取代有毒的铅基包晶石。在此,我们报告了具有出色光电探测性能的自供电 Cs3Bi2Br9/SnO2 异质结紫外线(UV)光电探测器。优化后的器件具有 5.5 103 的出色导通/关断比、25 mA/W 的大响应度以及 0 V 偏压下 6.9 1011 Jones 的检测度,远优于具有相同结构的其他卤化铋过氧化物。此外,即使在环境中暴露 30 天,优化器件的光电探测器性能也几乎没有变化,这表明它具有出色的稳定性。通过乙基黄原酸铋(Bi(Xt)3)将硫引入 Cs3Bi2Br9,进一步提高了器件的性能。该器件的探测率达到了 9.2 × 1011 琼斯,响应率达到了 37 mAW-1,显示了铋-透镜光电探测器的最佳性能。这项研究为利用包晶/无机异质结制造高性能、稳定的铋基包晶光电探测器提供了一种方法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
High performance ultraviolet photodetector based on lead-free bismuth perovskite heterojunction

Metal-based halide perovskite materials are very promising for high-performance optoelectronic devices due to their extraordinary photoelectric properties. Bismuth-based perovskites are believed to replace the toxic Pb-based perovskites in optoelectronics due to their remarkable stability, and nontoxic properties. Here, we report self-powered Cs3Bi2Br9/SnO2 heterojunction ultraviolet (UV) photodetectors with excellent photoelectric detectivity. The optimized device exhibits an excellent ON/OFF ratio of 5.5 \(\times\) 103, a large responsivity of 25 mA/W, and a detectivity of 6.9 \(\times\) 1011 Jones at 0 V bias, which is much better than other bismuth halide perovskites with the same structure. In addition, our photodetector performance of the optimized device exhibits almost no change even after 30 days of exposure under an ambient environment, indicating excellent stability. Sulphur is introduced to Cs3Bi2Br9 via bismuth ethyl-xanthogenate (Bi(Xt)3) to further improve the device performance. Detectivity of 9.2 × 1011 Jones and responsivity of 37 mAW–1 are achieved, which shows the best performance for bismuth-perovskite photodetector in this work. This work provides a method for fabricating high-performance and stable bismuth-based perovskite photodetectors with perovskite/inorganic heterojunctions.

求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
Bulletin of Materials Science
Bulletin of Materials Science 工程技术-材料科学:综合
CiteScore
3.40
自引率
5.60%
发文量
209
审稿时长
11.5 months
期刊介绍: The Bulletin of Materials Science is a bi-monthly journal being published by the Indian Academy of Sciences in collaboration with the Materials Research Society of India and the Indian National Science Academy. The journal publishes original research articles, review articles and rapid communications in all areas of materials science. The journal also publishes from time to time important Conference Symposia/ Proceedings which are of interest to materials scientists. It has an International Advisory Editorial Board and an Editorial Committee. The Bulletin accords high importance to the quality of articles published and to keep at a minimum the processing time of papers submitted for publication.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信