PVP表面活性剂辅助的MoO3/g-C3N4纳米复合材料的简易合成提高了光催化降解染料和电催化整体分水的性能

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
G. Vasanthi, P. Dharani, T. Prabhuraj, A. Gomathi, K. A. Ramesh Kumar, P. Maadeswaran
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引用次数: 0

摘要

本研究介绍了通过水热法合成的 MoO3/g-C3N4 纳米复合材料,并展示了其在光催化降解 RhB 染料和电催化整体水分离方面的潜在应用。因此,XRD、FT-IR、UV-DRS、SEM、TEM 和 XPS 表征了功能电极的形态、光学和结构特征。这些技术表明,g-C3N4 表面有效地形成了 MoO3 纳米晶体,没有形成任何其他不需要的物种。在交替阳光照射下,MoO3/g-C3N4 纳米复合材料在 60 分钟内对 RhB 染料的光催化降解率高达 88%。与裸 MoO3 催化剂相比,MoO3/g-C3N4 纳米复合材料具有更高的电流密度、良好的稳定性、较低的过电位和较小的塔菲尔斜率。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Facile synthesis of PVP surfactant-aided MoO3/g-C3N4 nanocomposites improves the performance of photocatalytic dye degradation and electrocatalytic overall water-splitting bustle

This work describes the MoO3/g-C3N4 nanocomposite that has been synthesized via a hydrothermal process and it demonstrates a potential application designed for photocatalytic RhB dye degradation and electrocatalytic overall water splitting. Hence the XRD, FT-IR, UV-DRS, SEM, TEM and XPS characterized the functional electrode's morphological, optical, and structural characteristics. These techniques revealed that the g-C3N4 surfaces were effectively MoO3 nanocrystals without any other unwanted species formation. The MoO3/g-C3N4 nanocomposite demonstrates superior photocatalytic RhB dye degradation under alternating sunlight irradiation up to 88% for 60 min. The Electrocatalytic overall water-splitting performance is evaluated by LSV, chronoamperometry, chronopotentiometry, and EIS analysis which exhibit higher current density, good stability, low overpotential, and small Tafel slop of the MoO3/g-C3N4 nanocomposite than bare MoO3 catalyst.

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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