{"title":"白光led用Sr3NbGa3Si2O14:Tm3+/Dy3+荧光粉的结构与发光性能","authors":"Jinyang Li, Zhi Hong, Zhenggang Zou, Jianhui Huang","doi":"10.1007/s10854-024-14059-1","DOIUrl":null,"url":null,"abstract":"<div><p>Rare earth luminescent materials are employed in a multitude of fields, including illumination and luminescence, electronic information and biochemistry, due to their distinctive luminescent properties. This paper details the successful synthesis of a series of rare-earth ion-doped phosphors based on Sr<sub>3</sub>NbGa<sub>3</sub>Si<sub>2</sub>O<sub>14</sub> via a high-temperature solid-phase reaction method. The physical phase, structure and luminescence properties of the phosphor were characterised by X-ray diffraction (XRD), scanning electron microscopy (SEM) and fluorescence spectroscopy (FL), and the crystal structure, excitation and emission spectra, energy transfer mechanism, CIE colour coordinates quantum yield and thermal stability were analysed and investigated in order to understand the structural and optical properties of the phosphor. The results demonstrated that the excitation and emission spectra of the samples exhibited the typical spectrum of Dy<sup>3+</sup>. Furthermore, the luminescence colour of the Sr<sub>3(0.97-y)</sub>NbGa<sub>3</sub>Si<sub>2</sub>O<sub>14</sub>: 0.03Dy<sup>3+</sup>/yTm<sup>3+</sup> phosphor can be controlled by modulating the doping concentration of Tm<sup>3+</sup> for white light emission. The Sr<sub>2.79</sub>NbGa<sub>3</sub>Si<sub>2</sub>O<sub>14</sub>:0.03Dy<sup>3+</sup>/0.04Tm<sup>3+</sup> phosphor (0.3339, 0.3369) exhibits a good degree of agreement with the standard white light point (0.333, 0.333). By calculating the normalized intensity of the phosphor at different temperatures, the results demonstrated that the emission intensity of the Sr<sub>2.79</sub>NbGa<sub>3</sub>Si<sub>2</sub>O<sub>14</sub>:0.03Dy<sup>3+</sup>/0.04Tm<sup>3+</sup> phosphor at 150 degrees Celsius retained 89.9% of its initial intensity. This study has successfully demonstrated the white light emission of the Sr<sub>3</sub>NbGa<sub>3</sub>Si<sub>2</sub>O<sub>14</sub>:Dy<sup>3+</sup>/Tm<sup>3+</sup> phosphor, as well as the production of a phosphor with thermal stability. This phosphor has the potential to be applied in the field of near-ultraviolet light-excited white light-emitting diode lighting.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"35 36","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2024-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Structure and luminescence property of Sr3NbGa3Si2O14:Tm3+/Dy3+ phosphors for white LEDs\",\"authors\":\"Jinyang Li, Zhi Hong, Zhenggang Zou, Jianhui Huang\",\"doi\":\"10.1007/s10854-024-14059-1\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Rare earth luminescent materials are employed in a multitude of fields, including illumination and luminescence, electronic information and biochemistry, due to their distinctive luminescent properties. This paper details the successful synthesis of a series of rare-earth ion-doped phosphors based on Sr<sub>3</sub>NbGa<sub>3</sub>Si<sub>2</sub>O<sub>14</sub> via a high-temperature solid-phase reaction method. The physical phase, structure and luminescence properties of the phosphor were characterised by X-ray diffraction (XRD), scanning electron microscopy (SEM) and fluorescence spectroscopy (FL), and the crystal structure, excitation and emission spectra, energy transfer mechanism, CIE colour coordinates quantum yield and thermal stability were analysed and investigated in order to understand the structural and optical properties of the phosphor. The results demonstrated that the excitation and emission spectra of the samples exhibited the typical spectrum of Dy<sup>3+</sup>. Furthermore, the luminescence colour of the Sr<sub>3(0.97-y)</sub>NbGa<sub>3</sub>Si<sub>2</sub>O<sub>14</sub>: 0.03Dy<sup>3+</sup>/yTm<sup>3+</sup> phosphor can be controlled by modulating the doping concentration of Tm<sup>3+</sup> for white light emission. The Sr<sub>2.79</sub>NbGa<sub>3</sub>Si<sub>2</sub>O<sub>14</sub>:0.03Dy<sup>3+</sup>/0.04Tm<sup>3+</sup> phosphor (0.3339, 0.3369) exhibits a good degree of agreement with the standard white light point (0.333, 0.333). By calculating the normalized intensity of the phosphor at different temperatures, the results demonstrated that the emission intensity of the Sr<sub>2.79</sub>NbGa<sub>3</sub>Si<sub>2</sub>O<sub>14</sub>:0.03Dy<sup>3+</sup>/0.04Tm<sup>3+</sup> phosphor at 150 degrees Celsius retained 89.9% of its initial intensity. This study has successfully demonstrated the white light emission of the Sr<sub>3</sub>NbGa<sub>3</sub>Si<sub>2</sub>O<sub>14</sub>:Dy<sup>3+</sup>/Tm<sup>3+</sup> phosphor, as well as the production of a phosphor with thermal stability. This phosphor has the potential to be applied in the field of near-ultraviolet light-excited white light-emitting diode lighting.</p></div>\",\"PeriodicalId\":646,\"journal\":{\"name\":\"Journal of Materials Science: Materials in Electronics\",\"volume\":\"35 36\",\"pages\":\"\"},\"PeriodicalIF\":2.8000,\"publicationDate\":\"2024-12-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Materials Science: Materials in Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s10854-024-14059-1\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-024-14059-1","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Structure and luminescence property of Sr3NbGa3Si2O14:Tm3+/Dy3+ phosphors for white LEDs
Rare earth luminescent materials are employed in a multitude of fields, including illumination and luminescence, electronic information and biochemistry, due to their distinctive luminescent properties. This paper details the successful synthesis of a series of rare-earth ion-doped phosphors based on Sr3NbGa3Si2O14 via a high-temperature solid-phase reaction method. The physical phase, structure and luminescence properties of the phosphor were characterised by X-ray diffraction (XRD), scanning electron microscopy (SEM) and fluorescence spectroscopy (FL), and the crystal structure, excitation and emission spectra, energy transfer mechanism, CIE colour coordinates quantum yield and thermal stability were analysed and investigated in order to understand the structural and optical properties of the phosphor. The results demonstrated that the excitation and emission spectra of the samples exhibited the typical spectrum of Dy3+. Furthermore, the luminescence colour of the Sr3(0.97-y)NbGa3Si2O14: 0.03Dy3+/yTm3+ phosphor can be controlled by modulating the doping concentration of Tm3+ for white light emission. The Sr2.79NbGa3Si2O14:0.03Dy3+/0.04Tm3+ phosphor (0.3339, 0.3369) exhibits a good degree of agreement with the standard white light point (0.333, 0.333). By calculating the normalized intensity of the phosphor at different temperatures, the results demonstrated that the emission intensity of the Sr2.79NbGa3Si2O14:0.03Dy3+/0.04Tm3+ phosphor at 150 degrees Celsius retained 89.9% of its initial intensity. This study has successfully demonstrated the white light emission of the Sr3NbGa3Si2O14:Dy3+/Tm3+ phosphor, as well as the production of a phosphor with thermal stability. This phosphor has the potential to be applied in the field of near-ultraviolet light-excited white light-emitting diode lighting.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.