白光led用Sr3NbGa3Si2O14:Tm3+/Dy3+荧光粉的结构与发光性能

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Jinyang Li, Zhi Hong, Zhenggang Zou, Jianhui Huang
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引用次数: 0

摘要

稀土发光材料因其独特的发光特性被广泛应用于照明和发光、电子信息和生物化学等多个领域。本文详细介绍了通过高温固相反应法成功合成一系列基于 Sr3NbGa3Si2O14 的稀土离子掺杂荧光粉。通过 X 射线衍射(XRD)、扫描电子显微镜(SEM)和荧光光谱(FL)对荧光粉的物相、结构和发光特性进行了表征,并分析和研究了荧光粉的晶体结构、激发光谱和发射光谱、能量传递机制、CIE 色坐标量子产率和热稳定性,从而了解了荧光粉的结构和光学特性。结果表明,样品的激发光谱和发射光谱呈现出典型的 Dy3+ 光谱。此外,Sr3(0.97-y)NbGa3Si2O14: 0.03Dy3+/yTm3+ 荧光粉的发光颜色可通过调节 Tm3+ 的掺杂浓度来控制,以实现白光发射。Sr2.79NbGa3Si2O14:0.03Dy3+/0.04Tm3+荧光粉(0.3339,0.3369)与标准白光点(0.333,0.333)有很好的一致性。通过计算荧光粉在不同温度下的归一化强度,结果表明 Sr2.79NbGa3Si2O14:0.03Dy3+/0.04Tm3+ 荧光粉在 150 摄氏度时的发射强度保留了其初始强度的 89.9%。这项研究成功地证明了 Sr3NbGa3Si2O14:Dy3+/Tm3+ 荧光粉能发射白光,并生产出具有热稳定性的荧光粉。这种荧光粉有望应用于近紫外光激发的白光发光二极管照明领域。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Structure and luminescence property of Sr3NbGa3Si2O14:Tm3+/Dy3+ phosphors for white LEDs

Structure and luminescence property of Sr3NbGa3Si2O14:Tm3+/Dy3+ phosphors for white LEDs

Rare earth luminescent materials are employed in a multitude of fields, including illumination and luminescence, electronic information and biochemistry, due to their distinctive luminescent properties. This paper details the successful synthesis of a series of rare-earth ion-doped phosphors based on Sr3NbGa3Si2O14 via a high-temperature solid-phase reaction method. The physical phase, structure and luminescence properties of the phosphor were characterised by X-ray diffraction (XRD), scanning electron microscopy (SEM) and fluorescence spectroscopy (FL), and the crystal structure, excitation and emission spectra, energy transfer mechanism, CIE colour coordinates quantum yield and thermal stability were analysed and investigated in order to understand the structural and optical properties of the phosphor. The results demonstrated that the excitation and emission spectra of the samples exhibited the typical spectrum of Dy3+. Furthermore, the luminescence colour of the Sr3(0.97-y)NbGa3Si2O14: 0.03Dy3+/yTm3+ phosphor can be controlled by modulating the doping concentration of Tm3+ for white light emission. The Sr2.79NbGa3Si2O14:0.03Dy3+/0.04Tm3+ phosphor (0.3339, 0.3369) exhibits a good degree of agreement with the standard white light point (0.333, 0.333). By calculating the normalized intensity of the phosphor at different temperatures, the results demonstrated that the emission intensity of the Sr2.79NbGa3Si2O14:0.03Dy3+/0.04Tm3+ phosphor at 150 degrees Celsius retained 89.9% of its initial intensity. This study has successfully demonstrated the white light emission of the Sr3NbGa3Si2O14:Dy3+/Tm3+ phosphor, as well as the production of a phosphor with thermal stability. This phosphor has the potential to be applied in the field of near-ultraviolet light-excited white light-emitting diode lighting.

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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