面向非辐射抑制和电致发光二极管增强的CsPbBr3量子点表面钝化策略

IF 3.3 3区 化学 Q2 CHEMISTRY, INORGANIC & NUCLEAR
Weiwei Chen, Lin Hu, Yi Wang, Lei Huang, Zhen Wang and Xiaosheng Tang
{"title":"面向非辐射抑制和电致发光二极管增强的CsPbBr3量子点表面钝化策略","authors":"Weiwei Chen, Lin Hu, Yi Wang, Lei Huang, Zhen Wang and Xiaosheng Tang","doi":"10.1039/D4DT02705A","DOIUrl":null,"url":null,"abstract":"<p >With many fascinating characteristics, such as color-tunability, narrow-band emission, and low-cost solution processability, all-inorganic lead halide perovskite quantum dots (QDs) have attracted keen attention for electroluminescent light-emitting diodes (QLEDs) and display applications. However, the performance of perovskite QLED devices is intrinsically limited by the inefficient electrical carrier transport capacity. Herein, one facile but effective method is proposed to enhance the perovskite QLED performance by incorporating a short carbon chain ligand of 2-phenethylammonium bromide (PEABr) to passivate the CsPbBr<small><sub>3</sub></small> QD surface. With the PEABr ligand, the Br<small><sup>−</sup></small> vacancies are passivated, which could eliminate nonradiative recombination of perovskite QDs; thus their optical properties are enhanced. Meanwhile, PEABr can interact with perovskite QDs to adjust the perovskite film morphology, resulting in low current leakage and efficient electron injection. After the PEABr treatment, the CsPbBr<small><sub>3</sub></small> QD film exhibits strong green emission located at 516 nm, with an average photoluminescence lifetime of 45.71 ns and a photoluminescence quantum yield of up to 78.64%. In addition, the surface roughness of the CsPbBr<small><sub>3</sub></small> QD film is reduced from 3.61 nm to 1.38 nm, which is essential to prepare a QD film with high surface coverage. As a result, the QLED device with PEABr treated CsPbBr<small><sub>3</sub></small> QDs exhibits a maximum current efficiency of 32.69 cd A<small><sup>−1</sup></small> corresponding to an external quantum efficiency of 9.67%, 3.88-fold higher than that of the control device (pure QDs as an emission layer). This research provides an effective strategy for the improvement of the perovskite QLED performance and may be helpful for extending their actual applications.</p>","PeriodicalId":71,"journal":{"name":"Dalton Transactions","volume":" 5","pages":" 2156-2165"},"PeriodicalIF":3.3000,"publicationDate":"2024-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Surface passivation strategies for CsPbBr3 quantum dots aiming at nonradiative suppression and enhancement of electroluminescent light-emitting diodes†\",\"authors\":\"Weiwei Chen, Lin Hu, Yi Wang, Lei Huang, Zhen Wang and Xiaosheng Tang\",\"doi\":\"10.1039/D4DT02705A\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p >With many fascinating characteristics, such as color-tunability, narrow-band emission, and low-cost solution processability, all-inorganic lead halide perovskite quantum dots (QDs) have attracted keen attention for electroluminescent light-emitting diodes (QLEDs) and display applications. However, the performance of perovskite QLED devices is intrinsically limited by the inefficient electrical carrier transport capacity. Herein, one facile but effective method is proposed to enhance the perovskite QLED performance by incorporating a short carbon chain ligand of 2-phenethylammonium bromide (PEABr) to passivate the CsPbBr<small><sub>3</sub></small> QD surface. With the PEABr ligand, the Br<small><sup>−</sup></small> vacancies are passivated, which could eliminate nonradiative recombination of perovskite QDs; thus their optical properties are enhanced. Meanwhile, PEABr can interact with perovskite QDs to adjust the perovskite film morphology, resulting in low current leakage and efficient electron injection. After the PEABr treatment, the CsPbBr<small><sub>3</sub></small> QD film exhibits strong green emission located at 516 nm, with an average photoluminescence lifetime of 45.71 ns and a photoluminescence quantum yield of up to 78.64%. In addition, the surface roughness of the CsPbBr<small><sub>3</sub></small> QD film is reduced from 3.61 nm to 1.38 nm, which is essential to prepare a QD film with high surface coverage. As a result, the QLED device with PEABr treated CsPbBr<small><sub>3</sub></small> QDs exhibits a maximum current efficiency of 32.69 cd A<small><sup>−1</sup></small> corresponding to an external quantum efficiency of 9.67%, 3.88-fold higher than that of the control device (pure QDs as an emission layer). This research provides an effective strategy for the improvement of the perovskite QLED performance and may be helpful for extending their actual applications.</p>\",\"PeriodicalId\":71,\"journal\":{\"name\":\"Dalton Transactions\",\"volume\":\" 5\",\"pages\":\" 2156-2165\"},\"PeriodicalIF\":3.3000,\"publicationDate\":\"2024-12-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Dalton Transactions\",\"FirstCategoryId\":\"92\",\"ListUrlMain\":\"https://pubs.rsc.org/en/content/articlelanding/2025/dt/d4dt02705a\",\"RegionNum\":3,\"RegionCategory\":\"化学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"CHEMISTRY, INORGANIC & NUCLEAR\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Dalton Transactions","FirstCategoryId":"92","ListUrlMain":"https://pubs.rsc.org/en/content/articlelanding/2025/dt/d4dt02705a","RegionNum":3,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"CHEMISTRY, INORGANIC & NUCLEAR","Score":null,"Total":0}
引用次数: 0

摘要

全无机卤化铅包晶量子点(QDs)具有颜色可调、窄带发射和低成本溶液可加工性等诸多迷人特性,在电致发光发光二极管(QLEDs)和显示应用中备受关注。然而,由于载流子传输能力低下,过氧化物 QLED 器件的性能受到了本质上的限制。本文提出了一种简便而有效的方法,通过加入 2-苯乙基溴化铵(PEABr)短碳链配体来钝化 CsPbBr3 QDs 表面,从而提高透镜型 QLED 的性能。有了 PEABr 配体,硼空位被钝化,从而消除了过氧化物质点的非辐射重组,增强了其光学性能。同时,由于 PEABr 可以与包晶 QDs 相互作用,调整包晶薄膜的形态,从而实现低漏电和高效电子注入。经过 PEABr 精密处理后,CsPbBr3 QDs 薄膜在 516 nm 处发出强烈的绿色光,平均光致发光寿命为 45.71 ns,光致发光量子产率高达 78.64%。此外,CsPbBr3 QDs 薄膜的表面粗糙度从 3.61 nm 降低到 1.38 nm,这对于制备高表面覆盖率的 QDs 薄膜至关重要。因此,采用 PEABr 处理 CsPbBr3 QDs 的 QLED 器件的最大电流效率为 32.69 cd A-1,外部量子效率为 9.67%,是对照器件(纯 QDs 作为发射层)的 3.88 倍。这项研究为提高包晶QLED的性能提供了一种有效的策略,并可能有助于扩大其实际应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Surface passivation strategies for CsPbBr3 quantum dots aiming at nonradiative suppression and enhancement of electroluminescent light-emitting diodes†

Surface passivation strategies for CsPbBr3 quantum dots aiming at nonradiative suppression and enhancement of electroluminescent light-emitting diodes†

With many fascinating characteristics, such as color-tunability, narrow-band emission, and low-cost solution processability, all-inorganic lead halide perovskite quantum dots (QDs) have attracted keen attention for electroluminescent light-emitting diodes (QLEDs) and display applications. However, the performance of perovskite QLED devices is intrinsically limited by the inefficient electrical carrier transport capacity. Herein, one facile but effective method is proposed to enhance the perovskite QLED performance by incorporating a short carbon chain ligand of 2-phenethylammonium bromide (PEABr) to passivate the CsPbBr3 QD surface. With the PEABr ligand, the Br vacancies are passivated, which could eliminate nonradiative recombination of perovskite QDs; thus their optical properties are enhanced. Meanwhile, PEABr can interact with perovskite QDs to adjust the perovskite film morphology, resulting in low current leakage and efficient electron injection. After the PEABr treatment, the CsPbBr3 QD film exhibits strong green emission located at 516 nm, with an average photoluminescence lifetime of 45.71 ns and a photoluminescence quantum yield of up to 78.64%. In addition, the surface roughness of the CsPbBr3 QD film is reduced from 3.61 nm to 1.38 nm, which is essential to prepare a QD film with high surface coverage. As a result, the QLED device with PEABr treated CsPbBr3 QDs exhibits a maximum current efficiency of 32.69 cd A−1 corresponding to an external quantum efficiency of 9.67%, 3.88-fold higher than that of the control device (pure QDs as an emission layer). This research provides an effective strategy for the improvement of the perovskite QLED performance and may be helpful for extending their actual applications.

求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
Dalton Transactions
Dalton Transactions 化学-无机化学与核化学
CiteScore
6.60
自引率
7.50%
发文量
1832
审稿时长
1.5 months
期刊介绍: Dalton Transactions is a journal for all areas of inorganic chemistry, which encompasses the organometallic, bioinorganic and materials chemistry of the elements, with applications including synthesis, catalysis, energy conversion/storage, electrical devices and medicine. Dalton Transactions welcomes high-quality, original submissions in all of these areas and more, where the advancement of knowledge in inorganic chemistry is significant.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信