{"title":"化学溶液沉积法外延生长掺钙LaRhO3薄膜","authors":"Li Zhang, Chen Zhou, Renhuai Wei, Xuebin Zhu","doi":"10.1007/s10854-024-14040-y","DOIUrl":null,"url":null,"abstract":"<div><p>LaRhO<sub>3</sub> is a typical 4d transition metal perovskite oxide with p-type semiconductor-like properties. Few reports have been carried out about the La-site doping effects on the properties and no investigations have been carried out about Ca doping effects on LaRhO<sub>3</sub> thin films. Here, La<sub>1-x</sub>Ca<sub>x</sub>RhO<sub>3</sub> (0 ≤ <i>x</i> ≤ 0.2) thin films were firstly deposited by chemical solution deposition. Epitaxial La<sub>1-x</sub>Ca<sub>x</sub>RhO<sub>3</sub> thin films on single crystal SrTiO<sub>3</sub> (001) substrates with the epitaxial relationship of LaRhO<sub>3</sub>(001)[110]||SrTiO<sub>3</sub>(001)[110] have be successfully prepared. The solid solution limitation of Ca doping on La site is less than 0.3. The Ca doping effects on LRO thin film microstructures, electrical and optical properties were carefully investigated. With Ca doping, the lattice constant, the resistivity, and the optical gap were decreased. The results will provide a simple route to prepare La<sub>1-x</sub>Ca<sub>x</sub>RhO<sub>3</sub> based thin films for potential applications as near infrared transparent conducting thin films.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"35 36","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2024-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Epitaxial growth of Ca-doped LaRhO3 thin films by chemical solution deposition\",\"authors\":\"Li Zhang, Chen Zhou, Renhuai Wei, Xuebin Zhu\",\"doi\":\"10.1007/s10854-024-14040-y\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>LaRhO<sub>3</sub> is a typical 4d transition metal perovskite oxide with p-type semiconductor-like properties. Few reports have been carried out about the La-site doping effects on the properties and no investigations have been carried out about Ca doping effects on LaRhO<sub>3</sub> thin films. Here, La<sub>1-x</sub>Ca<sub>x</sub>RhO<sub>3</sub> (0 ≤ <i>x</i> ≤ 0.2) thin films were firstly deposited by chemical solution deposition. Epitaxial La<sub>1-x</sub>Ca<sub>x</sub>RhO<sub>3</sub> thin films on single crystal SrTiO<sub>3</sub> (001) substrates with the epitaxial relationship of LaRhO<sub>3</sub>(001)[110]||SrTiO<sub>3</sub>(001)[110] have be successfully prepared. The solid solution limitation of Ca doping on La site is less than 0.3. The Ca doping effects on LRO thin film microstructures, electrical and optical properties were carefully investigated. With Ca doping, the lattice constant, the resistivity, and the optical gap were decreased. The results will provide a simple route to prepare La<sub>1-x</sub>Ca<sub>x</sub>RhO<sub>3</sub> based thin films for potential applications as near infrared transparent conducting thin films.</p></div>\",\"PeriodicalId\":646,\"journal\":{\"name\":\"Journal of Materials Science: Materials in Electronics\",\"volume\":\"35 36\",\"pages\":\"\"},\"PeriodicalIF\":2.8000,\"publicationDate\":\"2024-12-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Materials Science: Materials in Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s10854-024-14040-y\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-024-14040-y","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Epitaxial growth of Ca-doped LaRhO3 thin films by chemical solution deposition
LaRhO3 is a typical 4d transition metal perovskite oxide with p-type semiconductor-like properties. Few reports have been carried out about the La-site doping effects on the properties and no investigations have been carried out about Ca doping effects on LaRhO3 thin films. Here, La1-xCaxRhO3 (0 ≤ x ≤ 0.2) thin films were firstly deposited by chemical solution deposition. Epitaxial La1-xCaxRhO3 thin films on single crystal SrTiO3 (001) substrates with the epitaxial relationship of LaRhO3(001)[110]||SrTiO3(001)[110] have be successfully prepared. The solid solution limitation of Ca doping on La site is less than 0.3. The Ca doping effects on LRO thin film microstructures, electrical and optical properties were carefully investigated. With Ca doping, the lattice constant, the resistivity, and the optical gap were decreased. The results will provide a simple route to prepare La1-xCaxRhO3 based thin films for potential applications as near infrared transparent conducting thin films.
期刊介绍：
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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