SOI MEMS压力传感器快速SPICE仿真等效电路参数提取方法

IF 2.2 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Sensors Letters Pub Date : 2024-11-19 DOI:10.1109/LSENS.2024.3502156

Artem T. Tulaev;V. V. Loboda

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引用次数: 0

摘要

本文介绍了一种利用SPICE仿真和集成电路（IC）电子接口对绝缘体上硅（SOI）微机电系统压力传感器的传感元件进行参数提取的方法。这种方法允许在早期设计阶段的传感元件和读出电子性能优化。采用深度反应离子刻蚀法在预掺杂SOI晶片上制备了基于SOI技术的压阻式传感元件。利用传感元件的有限元模型进行SPICE传感器的模型提取。这些参数转化为Verilog-A传感元件模型。采用由仪表放大器组成的集成电路电子接口进行了一组仿真。结果表明，有限元模型与SPICE模型的满尺非线性差异为11%。

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Parametric Extraction Method of Equivalent Circuit for SOI MEMS Pressure Sensor Rapid SPICE Simulation

This letter presents a method for parametric extraction of sensing elements of silicon-on-insulator (SOI) microelectromechanical system pressure sensors utilizing SPICE simulation with integrated circuit (IC) electronic interface. This approach allows the performance optimization of sensing elements and readout electronics in early design stage. The piezoresistive sensing element based on SOI technology is manufactured by means of deep reactive ion etching on predoped SOI wafers. The finite-element model (FEM) of the sensing element is used for SPICE sensor model extraction. These parameters translate to a Verilog-A sensing element model. The set of simulation with IC electronic interface consists of an instrumentation amplifier was performed. The 11% difference in fullscale (FS) nonlinearity for the FEM and the SPICE model was obtained.

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来源期刊

IEEE Sensors Letters Engineering-Electrical and Electronic Engineering

CiteScore

3.50

自引率

7.10%

发文量

194