超高压原子层沉积法制备p型半导体用二维碲薄膜

IF 9.1 1区 材料科学 Q1 CHEMISTRY, MULTIDISCIPLINARY
Dai Cuong Tran, Giang Hoang Pham, Thi Thu Huong Chu, Jiyoung Kim, Jae Kyeong Jeong, Seongil Im, Byoung Hun Lee, Myung Mo Sung
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引用次数: 0

摘要

碲(Te)由于其令人印象深刻的特性,如高迁移率、稳定性和与低温加工的兼容性,已成为二维材料中突出的候选者。然而,在低温下沉积的超薄Te薄膜在大面积上实现一致的均匀性仍然是一个巨大的挑战。原子层沉积(ALD)被认为是一种很有前途的解决方案,即使在低温下也能提供精确的厚度控制和高度适形的薄膜沉积。本研究介绍了一种采用多剂量(MD)策略的高压ALD (HP-ALD)逐层生长Te薄膜的成功方法。所得薄膜的霍尔迁移率为51.2 cm2 V-1 s-1,具有很高的稳定性和良好的表面覆盖率。HP-ALD与MD的集成代表了Te薄膜制造的重大进步,克服了以前的限制,为Te在下一代技术中的更广泛应用铺平了道路。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Layer-by-Layer Growth of Two-Dimensional Tellurium Thin Films via Ultrahigh-Pressure Atomic Layer Deposition for p-Type Semiconductors

Layer-by-Layer Growth of Two-Dimensional Tellurium Thin Films via Ultrahigh-Pressure Atomic Layer Deposition for p-Type Semiconductors
Tellurium (Te) has emerged as a prominent candidate among two-dimensional materials due to its impressive properties, such as high mobility, stability, and compatibility with low-temperature processing. However, achieving consistent uniformity over large areas for ultrathin Te films deposited at low temperatures has remained a substantial challenge. Atomic layer deposition (ALD) has been proposed as a promising solution, offering precise thickness control and highly conformal thin film deposition even at low temperatures. This study introduces a successful method for the layer-by-layer growth of Te thin films using high-pressure ALD (HP-ALD) with a multiple-dosing (MD) strategy. The resulting films exhibit a promising Hall mobility of 51.2 cm2 V–1 s–1, alongside high stability and excellent surface coverage. The integration of HP-ALD with MD represents a significant advancement in Te thin film fabrication, overcoming previous limitations and paving the way for the broader utilization of Te in next-generation technologies.
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来源期刊
Nano Letters
Nano Letters 工程技术-材料科学:综合
CiteScore
16.80
自引率
2.80%
发文量
1182
审稿时长
1.4 months
期刊介绍: Nano Letters serves as a dynamic platform for promptly disseminating original results in fundamental, applied, and emerging research across all facets of nanoscience and nanotechnology. A pivotal criterion for inclusion within Nano Letters is the convergence of at least two different areas or disciplines, ensuring a rich interdisciplinary scope. The journal is dedicated to fostering exploration in diverse areas, including: - Experimental and theoretical findings on physical, chemical, and biological phenomena at the nanoscale - Synthesis, characterization, and processing of organic, inorganic, polymer, and hybrid nanomaterials through physical, chemical, and biological methodologies - Modeling and simulation of synthetic, assembly, and interaction processes - Realization of integrated nanostructures and nano-engineered devices exhibiting advanced performance - Applications of nanoscale materials in living and environmental systems Nano Letters is committed to advancing and showcasing groundbreaking research that intersects various domains, fostering innovation and collaboration in the ever-evolving field of nanoscience and nanotechnology.
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