高钾铋锌铌氧化物在β-Ga2O3垂直肖特基二极管中的电场管理

IF 3.6 2区物理与天体物理 Q2 PHYSICS, APPLIED

Applied Physics Letters Pub Date : 2024-12-10 DOI:10.1063/5.0240375

Pooja Sharma, Yeshwanth Parasubotu, Saurabh Lodha

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引用次数: 0

摘要

在这项工作中，我们将铋锌铌氧化物（BZN），一种高k介电材料，集成在金属绝缘体半导体（MIS）和场镀金属半导体（FP-MS）肖特基势垒二极管上β-Ga2O3。通过重新分配电场，利用BZN （k ~ 210）的高介电常数，将击穿电压（VBR）从300 V提高到600 V。肖特基势垒高度的提高，MIS器件提高了约0.14 eV， FP-MS器件提高了约0.28 eV，也有助于提高VBR。BZN内含物对特定导通电阻的影响最小（Ron,sp）。此外，该器件具有优异的电流-电压特性，理想因数接近于1，开/关电流比大于1010。这项工作提出了迄今为止报道的MIS器件在β-Ga2O3上最显著的VBR增强，而不影响导通电压和Ron，sp。对FP-MS和MIS器件的比较表明，FP-MS在更低的Ron、sp、更高的肖特基势垒高度和改进的VBR方面优于MIS。

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Electric field management in β-Ga2O3 vertical Schottky diodes using high-k bismuth zinc niobium oxide

In this work, we have integrated bismuth zinc niobium oxide (BZN), a high-k dielectric material, in metal–insulator–semiconductor (MIS) and field-plated metal–semiconductor (FP-MS) Schottky barrier diodes on β-Ga2O3. This increases the breakdown voltage (VBR) from 300 to 600 V by redistributing the electric fields, leveraging the high permittivity of BZN (k ∼ 210). Enhancement in Schottky barrier height, by approximately 0.14 eV for MIS and 0.28 eV for FP-MS devices, also contributes to the improved VBR. BZN inclusion has minimal impact on specific on-resistance (Ron,sp). Additionally, the devices display excellent current–voltage characteristics with ideality factors close to unity and an on/off current ratio greater than 1010. This work presents the most significant VBR enhancement reported-to-date for MIS devices on β-Ga2O3 without compromising turn-on voltage and Ron,sp. A comparison of FP-MS and MIS devices shows that FP-MS outperforms MIS in terms of lower Ron,sp, higher Schottky barrier height, and improved VBR.

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来源期刊

Applied Physics Letters 物理-物理：应用

CiteScore

6.40

自引率

10.00%

发文量

1821

审稿时长

1.6 months

期刊介绍： Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology. In addition to regular articles, the journal also publishes invited Fast Track, Perspectives, and in-depth Editorials which report on cutting-edge areas in applied physics. APL Perspectives are forward-looking invited letters which highlight recent developments or discoveries. Emphasis is placed on very recent developments, potentially disruptive technologies, open questions and possible solutions. They also include a mini-roadmap detailing where the community should direct efforts in order for the phenomena to be viable for application and the challenges associated with meeting that performance threshold. Perspectives are characterized by personal viewpoints and opinions of recognized experts in the field. Fast Track articles are invited original research articles that report results that are particularly novel and important or provide a significant advancement in an emerging field. Because of the urgency and scientific importance of the work, the peer review process is accelerated. If, during the review process, it becomes apparent that the paper does not meet the Fast Track criterion, it is returned to a normal track.