Adon Jose, Sone T. Sunny, T. Krishnapriya, Anitta Rose Varghese, Sincy Anna Oommen, Anns George, Saritha K. Jose, P. R. Biju
{"title":"显示器件和绿色激光用三价铽离子活化的bao - znf2 - k20 - sio2 - b2o3玻璃光谱降频特性研究","authors":"Adon Jose, Sone T. Sunny, T. Krishnapriya, Anitta Rose Varghese, Sincy Anna Oommen, Anns George, Saritha K. Jose, P. R. Biju","doi":"10.1007/s10854-024-14003-3","DOIUrl":null,"url":null,"abstract":"<div><p>The present work details the concentration-dependent luminescence features under UV excitation shown by a series of Tb<sup>3+</sup>-activated multicomponent borosilicate glasses (BaO-ZnF<sub>2</sub>-K<sub>2</sub>O-SiO<sub>2</sub>-B<sub>2</sub>O<sub>3</sub>) prepared via the melt-quench technique. XRD and FTIR spectra reveal the amorphous nature and the presence of various structural units such as B-O, Si–O-B, and Si-O-Si in the prepared glasses. Absorption studies identified the characteristic Tb<sup>3+</sup> absorption transitions from the samples and were further used for the evaluation of nephelauxetic ratio, bonding parameter, and the Judd–Ofelt intensity parameters of the system. The photoluminescence excitation, emission, and decay curves confirmed the intense green emission corresponding to the <sup>5</sup>D<sub>4</sub> → <sup>7</sup>F<sub>5</sub> transition from the as-prepared glasses. The CIE color coordinates comparable to those of European Broadcasting Union illuminant green (0.29, 0.60) and better radiative features suggest that the Tb<sup>3+</sup>-incorporated BaO-ZnF<sub>2</sub>-K<sub>2</sub>O-SiO<sub>2</sub>-B<sub>2</sub>O<sub>3</sub> glasses are suitable for green-emitting photonic device applications.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"35 35","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2024-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Investigation on the spectral downshifting features of trivalent Terbium ion-activated BaO-ZnF2-K2O-SiO2-B2O3 glasses for display devices and green laser applications\",\"authors\":\"Adon Jose, Sone T. Sunny, T. Krishnapriya, Anitta Rose Varghese, Sincy Anna Oommen, Anns George, Saritha K. Jose, P. R. Biju\",\"doi\":\"10.1007/s10854-024-14003-3\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>The present work details the concentration-dependent luminescence features under UV excitation shown by a series of Tb<sup>3+</sup>-activated multicomponent borosilicate glasses (BaO-ZnF<sub>2</sub>-K<sub>2</sub>O-SiO<sub>2</sub>-B<sub>2</sub>O<sub>3</sub>) prepared via the melt-quench technique. XRD and FTIR spectra reveal the amorphous nature and the presence of various structural units such as B-O, Si–O-B, and Si-O-Si in the prepared glasses. Absorption studies identified the characteristic Tb<sup>3+</sup> absorption transitions from the samples and were further used for the evaluation of nephelauxetic ratio, bonding parameter, and the Judd–Ofelt intensity parameters of the system. The photoluminescence excitation, emission, and decay curves confirmed the intense green emission corresponding to the <sup>5</sup>D<sub>4</sub> → <sup>7</sup>F<sub>5</sub> transition from the as-prepared glasses. The CIE color coordinates comparable to those of European Broadcasting Union illuminant green (0.29, 0.60) and better radiative features suggest that the Tb<sup>3+</sup>-incorporated BaO-ZnF<sub>2</sub>-K<sub>2</sub>O-SiO<sub>2</sub>-B<sub>2</sub>O<sub>3</sub> glasses are suitable for green-emitting photonic device applications.</p></div>\",\"PeriodicalId\":646,\"journal\":{\"name\":\"Journal of Materials Science: Materials in Electronics\",\"volume\":\"35 35\",\"pages\":\"\"},\"PeriodicalIF\":2.8000,\"publicationDate\":\"2024-12-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Materials Science: Materials in Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s10854-024-14003-3\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-024-14003-3","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Investigation on the spectral downshifting features of trivalent Terbium ion-activated BaO-ZnF2-K2O-SiO2-B2O3 glasses for display devices and green laser applications
The present work details the concentration-dependent luminescence features under UV excitation shown by a series of Tb3+-activated multicomponent borosilicate glasses (BaO-ZnF2-K2O-SiO2-B2O3) prepared via the melt-quench technique. XRD and FTIR spectra reveal the amorphous nature and the presence of various structural units such as B-O, Si–O-B, and Si-O-Si in the prepared glasses. Absorption studies identified the characteristic Tb3+ absorption transitions from the samples and were further used for the evaluation of nephelauxetic ratio, bonding parameter, and the Judd–Ofelt intensity parameters of the system. The photoluminescence excitation, emission, and decay curves confirmed the intense green emission corresponding to the 5D4 → 7F5 transition from the as-prepared glasses. The CIE color coordinates comparable to those of European Broadcasting Union illuminant green (0.29, 0.60) and better radiative features suggest that the Tb3+-incorporated BaO-ZnF2-K2O-SiO2-B2O3 glasses are suitable for green-emitting photonic device applications.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.