显示器件和绿色激光用三价铽离子活化的bao - znf2 - k20 - sio2 - b2o3玻璃光谱降频特性研究

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Adon Jose, Sone T. Sunny, T. Krishnapriya, Anitta Rose Varghese, Sincy Anna Oommen, Anns George, Saritha K. Jose, P. R. Biju
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引用次数: 0

摘要

本文详细介绍了通过熔融淬火技术制备的Tb3+活化的多组分硼硅酸盐玻璃(bao - znf2 - k20 - sio2 - b2o3)在紫外激发下的浓度依赖性发光特征。XRD和FTIR光谱分析表明,所制备的玻璃具有非晶性质,并存在B-O、Si-O-B和Si-O-Si等多种结构单元。吸收研究确定了样品的特色化Tb3+吸收跃迁,并进一步用于评价系统的散射比、键合参数和Judd-Ofelt强度参数。光致发光激发、发射和衰减曲线证实了从制备的玻璃中发出的5D4→7F5跃迁对应的强烈绿色发射。该玻璃的CIE色坐标可与欧洲广播联盟(European Broadcasting Union)的绿色光源相比较(0.29,0.60),且具有较好的辐射特性,表明含Tb3+的bao - znf2 - k20 - sio2 - b2o3玻璃适合于绿色发光光子器件的应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Investigation on the spectral downshifting features of trivalent Terbium ion-activated BaO-ZnF2-K2O-SiO2-B2O3 glasses for display devices and green laser applications

The present work details the concentration-dependent luminescence features under UV excitation shown by a series of Tb3+-activated multicomponent borosilicate glasses (BaO-ZnF2-K2O-SiO2-B2O3) prepared via the melt-quench technique. XRD and FTIR spectra reveal the amorphous nature and the presence of various structural units such as B-O, Si–O-B, and Si-O-Si in the prepared glasses. Absorption studies identified the characteristic Tb3+ absorption transitions from the samples and were further used for the evaluation of nephelauxetic ratio, bonding parameter, and the Judd–Ofelt intensity parameters of the system. The photoluminescence excitation, emission, and decay curves confirmed the intense green emission corresponding to the 5D4 → 7F5 transition from the as-prepared glasses. The CIE color coordinates comparable to those of European Broadcasting Union illuminant green (0.29, 0.60) and better radiative features suggest that the Tb3+-incorporated BaO-ZnF2-K2O-SiO2-B2O3 glasses are suitable for green-emitting photonic device applications.

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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