用于量子应用的低温2.9 - 8.6 ghz窄带扩展技术

0 ENGINEERING, ELECTRICAL & ELECTRONIC
Teng-Shen Yang;I-Hsun Chen;Liang-Hung Lu
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引用次数: 0

摘要

这项工作提出了一种用于量子计算的宽带和低功耗低温低噪声放大器(LNA)。基于电感源退化拓扑,有损耗输出反馈变压器(OFT)产生两个微阻尼共轭极,在较高频率下拓宽3db带宽并保持低噪声性能。此外,还采用了输入匹配变压器(IMT)来保证输入匹配带宽。该LNA采用0.18- $\mu $ m CMOS技术制造,在室温(300 K)下,其峰值增益为9.24 dB, 3db带宽范围为2.9至7.8 GHz,最小测量噪声系数(NF)为2.24 dB。在低温(4 K)下,LNA的测量峰值增益为14.23 dB,带宽为2.9 ~ 8.6 GHz,最小测得NF为0.6 dB。LNA的功耗为10mw。据作者所知,在功耗低于10 mW的CMOS LNA中,所提出的LNA在4 K时提供了最宽的带宽。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A Cryogenic 2.9–8.6-GHz LNA With Bandwidth Extension Technique for Quantum Applications
This work presents a wideband and power-efficient cryogenic low-noise amplifier (LNA) for quantum computing. Based on the inductive source-degeneration topology, a lossy output-feedback transformer (OFT) generates two slightly damping conjugate poles, which broaden the 3-dB bandwidth at higher frequencies and maintain low-noise performance. In addition, an input-matching transformer (IMT) is adopted to guarantee the input-matching bandwidth. Fabricated in a 0.18- $\mu $ m CMOS technology, the proposed LNA exhibits a peak gain of 9.24 dB with a 3-dB bandwidth ranging from 2.9 to 7.8 GHz at room temperature (RT) (300 K). The minimum measured noise figure (NF) is 2.24 dB. At cryogenic temperature (CT) (4 K), the LNA shows a measured peak gain of 14.23 dB with a 3-dB bandwidth from 2.9 to 8.6 GHz, and the minimum measured NF is 0.6 dB. The power consumption of the LNA is 10 mW. To the best of the authors’ knowledge, the proposed LNA offers the widest bandwidth at 4 K among CMOS LNAs with power consumption below 10 mW.
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CiteScore
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