Runzhou Chen;Hamdi Mani;Phil Marsh;Richard Al Hadi;Pragya Shrestha;Jason Campbell;Christopher Chen;Hao-Yu Chien;Kosmas Galatsis;Mau-Chung Frank Chang
{"title":"用于低温应用的16nm FinFET技术的4mw 2.2-6.9 GHz LNA","authors":"Runzhou Chen;Hamdi Mani;Phil Marsh;Richard Al Hadi;Pragya Shrestha;Jason Campbell;Christopher Chen;Hao-Yu Chien;Kosmas Galatsis;Mau-Chung Frank Chang","doi":"10.1109/LMWT.2024.3477328","DOIUrl":null,"url":null,"abstract":"This work presents the design and measurement of a low-power wide-band cryogenic low-noise amplifier (LNA) that operates at both room and cryogenic temperatures using 16 nm FinFET technology. The LNA is packaged and measured at both room and cryogenic temperatures. It features a compact multistage cascode topology and operates between 2.2 and 6.9 GHz, with a noise figure (NF) of 0.36 dB, a peak gain of 31.4 dB, and a total dc power consumption of 4 mW at 18 K temperature.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"34 12","pages":"1351-1354"},"PeriodicalIF":0.0000,"publicationDate":"2024-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A 4-mW 2.2–6.9 GHz LNA in 16 nm FinFET Technology for Cryogenic Applications\",\"authors\":\"Runzhou Chen;Hamdi Mani;Phil Marsh;Richard Al Hadi;Pragya Shrestha;Jason Campbell;Christopher Chen;Hao-Yu Chien;Kosmas Galatsis;Mau-Chung Frank Chang\",\"doi\":\"10.1109/LMWT.2024.3477328\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This work presents the design and measurement of a low-power wide-band cryogenic low-noise amplifier (LNA) that operates at both room and cryogenic temperatures using 16 nm FinFET technology. The LNA is packaged and measured at both room and cryogenic temperatures. It features a compact multistage cascode topology and operates between 2.2 and 6.9 GHz, with a noise figure (NF) of 0.36 dB, a peak gain of 31.4 dB, and a total dc power consumption of 4 mW at 18 K temperature.\",\"PeriodicalId\":73297,\"journal\":{\"name\":\"IEEE microwave and wireless technology letters\",\"volume\":\"34 12\",\"pages\":\"1351-1354\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2024-10-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE microwave and wireless technology letters\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10726929/\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"0\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE microwave and wireless technology letters","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/10726929/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"0","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
A 4-mW 2.2–6.9 GHz LNA in 16 nm FinFET Technology for Cryogenic Applications
This work presents the design and measurement of a low-power wide-band cryogenic low-noise amplifier (LNA) that operates at both room and cryogenic temperatures using 16 nm FinFET technology. The LNA is packaged and measured at both room and cryogenic temperatures. It features a compact multistage cascode topology and operates between 2.2 and 6.9 GHz, with a noise figure (NF) of 0.36 dB, a peak gain of 31.4 dB, and a total dc power consumption of 4 mW at 18 K temperature.
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