微型led显示屏的光明前景

IF 20.6 Q1 OPTICS

Light-Science & Applications Pub Date : 2024-12-06 DOI:10.1038/s41377-024-01683-z

Vineeth K. Bandari, Oliver G. Schmidt

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引用次数: 0

摘要

基于gan的Micro-LED阵列实现了超过107尼特的亮度和高达1080×780像素的高密度微显示器的发展标志着该领域的真正突破。这一突破是掌握了包括晶圆级高质量外延生长、侧壁钝化、高效光子提取和优雅键合技术在内的长期挑战的结果，并有望为增强和虚拟现实设备、可穿戴设备和下一代消费电子产品带来显著优势。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

A bright future for micro-LED displays

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A bright future for micro-LED displays

The development of GaN-based Micro-LED arrays achieving brightnesses exceeding 10⁷ nits and high-density micro-displays with up to 1080×780 pixels marks a true breakthrough in the field. This breakthrough is a result of mastering a combination of long-standing challenges comprising wafer-scale high-quality epitaxial growth, sidewall passivation, efficient photon extraction, and elegant bonding technologies, and promises significant advantages for augmented and virtual reality devices, wearables, and next-generation consumer electronics.

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来源期刊

Light-Science & Applications 数理科学, 物理学I, 光学, 凝聚态物性 II ：电子结构、电学、磁学和光学性质, 无机非金属材料, 无机非金属类光电信息与功能材料, 工程与材料, 信息科学, 光学和光电子学, 光学和光电子材料, 非线性光学与量子光学

自引率

0.00%

发文量

803

审稿时长

2.1 months