You You;Ruizhi Tian;Yacong Zhang;Zhongjian Chen;Wengao Lu;Yihan Zhang
{"title":"一种用于植入式医疗设备的具有动态电压供应的高压兼容86%峰值效率电流模式刺激器","authors":"You You;Ruizhi Tian;Yacong Zhang;Zhongjian Chen;Wengao Lu;Yihan Zhang","doi":"10.1109/JSSC.2024.3505059","DOIUrl":null,"url":null,"abstract":"This article introduces a high-voltage (HV) compliant, energy-efficient current-mode stimulator featuring a proposed boost-based dynamic voltage supply (DVS) to minimize the voltage dropout. The stimulator employs an activate-on-demand asynchronous strategy, instructing the boost converter to generate the dynamically increased high voltage that tracks the electrode’s voltage drop, thus achieving a near-adiabatic stimulation. The strategy relies on measuring the boost’s varying voltage conversion ratio (VCR), which is facilitated by an 8-bit voltage ratio quantizer (VRQ) proposed in this article. Furthermore, the boost converter employs a low-power, fast-speed, HV gate driver (HVGD) to control its p-type power switch that connects the inductor to the HV output. This article also presents a dedicated digital circuit that generates the pulse signals for controlling the n-type power switch and the HVGD. This digital circuit is driven by a five-phase clock from a current-starved ring oscillator. A highly efficient rotationally symmetric level shifter is utilized for the ring oscillator’s output, translating its level and improving its rise/fall time. The boost converter reaches a peak efficiency of 90.2%, enabling the stimulator to achieve an end-to-end energy efficiency of up to 86% during a biphasic stimulation of 6 mA. The stimulator IC, fabricated using 0.18-<inline-formula> <tex-math>$\\boldsymbol {\\mu }\\mathbf {m}$ </tex-math></inline-formula> bipolar-CMOS–DMOS (BCD) technology, occupies a compact area of 2.16 mm2. It exhibits low static power consumption at <inline-formula> <tex-math>$1.78~\\boldsymbol {\\mu }\\mathbf {W}$ </tex-math></inline-formula>, promising battery-powered implants with an extended lifetime and a reduced form factor.","PeriodicalId":13129,"journal":{"name":"IEEE Journal of Solid-state Circuits","volume":"60 7","pages":"2606-2618"},"PeriodicalIF":5.6000,"publicationDate":"2024-12-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A High-Voltage-Compliant 86% Peak Efficiency Current-Mode Stimulator With Dynamic Voltage Supply for Implantable Medical Devices\",\"authors\":\"You You;Ruizhi Tian;Yacong Zhang;Zhongjian Chen;Wengao Lu;Yihan Zhang\",\"doi\":\"10.1109/JSSC.2024.3505059\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This article introduces a high-voltage (HV) compliant, energy-efficient current-mode stimulator featuring a proposed boost-based dynamic voltage supply (DVS) to minimize the voltage dropout. The stimulator employs an activate-on-demand asynchronous strategy, instructing the boost converter to generate the dynamically increased high voltage that tracks the electrode’s voltage drop, thus achieving a near-adiabatic stimulation. The strategy relies on measuring the boost’s varying voltage conversion ratio (VCR), which is facilitated by an 8-bit voltage ratio quantizer (VRQ) proposed in this article. Furthermore, the boost converter employs a low-power, fast-speed, HV gate driver (HVGD) to control its p-type power switch that connects the inductor to the HV output. This article also presents a dedicated digital circuit that generates the pulse signals for controlling the n-type power switch and the HVGD. This digital circuit is driven by a five-phase clock from a current-starved ring oscillator. A highly efficient rotationally symmetric level shifter is utilized for the ring oscillator’s output, translating its level and improving its rise/fall time. The boost converter reaches a peak efficiency of 90.2%, enabling the stimulator to achieve an end-to-end energy efficiency of up to 86% during a biphasic stimulation of 6 mA. The stimulator IC, fabricated using 0.18-<inline-formula> <tex-math>$\\\\boldsymbol {\\\\mu }\\\\mathbf {m}$ </tex-math></inline-formula> bipolar-CMOS–DMOS (BCD) technology, occupies a compact area of 2.16 mm2. It exhibits low static power consumption at <inline-formula> <tex-math>$1.78~\\\\boldsymbol {\\\\mu }\\\\mathbf {W}$ </tex-math></inline-formula>, promising battery-powered implants with an extended lifetime and a reduced form factor.\",\"PeriodicalId\":13129,\"journal\":{\"name\":\"IEEE Journal of Solid-state Circuits\",\"volume\":\"60 7\",\"pages\":\"2606-2618\"},\"PeriodicalIF\":5.6000,\"publicationDate\":\"2024-12-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Journal of Solid-state Circuits\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10777070/\",\"RegionNum\":1,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Journal of Solid-state Circuits","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10777070/","RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
A High-Voltage-Compliant 86% Peak Efficiency Current-Mode Stimulator With Dynamic Voltage Supply for Implantable Medical Devices
This article introduces a high-voltage (HV) compliant, energy-efficient current-mode stimulator featuring a proposed boost-based dynamic voltage supply (DVS) to minimize the voltage dropout. The stimulator employs an activate-on-demand asynchronous strategy, instructing the boost converter to generate the dynamically increased high voltage that tracks the electrode’s voltage drop, thus achieving a near-adiabatic stimulation. The strategy relies on measuring the boost’s varying voltage conversion ratio (VCR), which is facilitated by an 8-bit voltage ratio quantizer (VRQ) proposed in this article. Furthermore, the boost converter employs a low-power, fast-speed, HV gate driver (HVGD) to control its p-type power switch that connects the inductor to the HV output. This article also presents a dedicated digital circuit that generates the pulse signals for controlling the n-type power switch and the HVGD. This digital circuit is driven by a five-phase clock from a current-starved ring oscillator. A highly efficient rotationally symmetric level shifter is utilized for the ring oscillator’s output, translating its level and improving its rise/fall time. The boost converter reaches a peak efficiency of 90.2%, enabling the stimulator to achieve an end-to-end energy efficiency of up to 86% during a biphasic stimulation of 6 mA. The stimulator IC, fabricated using 0.18-$\boldsymbol {\mu }\mathbf {m}$ bipolar-CMOS–DMOS (BCD) technology, occupies a compact area of 2.16 mm2. It exhibits low static power consumption at $1.78~\boldsymbol {\mu }\mathbf {W}$ , promising battery-powered implants with an extended lifetime and a reduced form factor.
期刊介绍:
The IEEE Journal of Solid-State Circuits publishes papers each month in the broad area of solid-state circuits with particular emphasis on transistor-level design of integrated circuits. It also provides coverage of topics such as circuits modeling, technology, systems design, layout, and testing that relate directly to IC design. Integrated circuits and VLSI are of principal interest; material related to discrete circuit design is seldom published. Experimental verification is strongly encouraged.