半导体电子显微镜中能量色散x射线光谱和图量化的最新进展

Thomas Walther
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引用次数: 0

摘要

这篇教程风格的文章描述了能量色散x射线光谱学定量应用的最新改进,以及电子显微镜对半导体的映射,重点是在表征薄层、量子阱和量子点的化学成分时可获得的空间分辨率、灵敏度和准确性。各种方法适用于扫描电子显微镜的大块和(扫描)透射电子显微镜的薄膜样品概述。举例说明了以砷化铟镓和硅锗为主要材料在半导体量子阱系统中的应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Recent improvements in quantification of energy-dispersive X-ray spectra and maps in electron microscopy of semiconductors

Recent improvements in quantification of energy-dispersive X-ray spectra and maps in electron microscopy of semiconductors

This tutorial-style article describes recent improvements in the quantitative application of energy-dispersive X-ray spectroscopy and mapping in electron microscopes to semiconductors, with a focus on spatial resolution, sensitivity and accuracy obtainable in characterising the chemical composition of thin layers, quantum wells and quantum dots. Various approaches applicable in scanning electron microscopy of bulk and (scanning) transmission electron microscopy of thin film samples are outlined. Applications to semiconductor quantum well systems, mainly based on indium gallium arsenide and silicon germanium studied in the author's laboratory, are provided as examples.

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CiteScore
0.70
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