{"title":"电容器用La/Bi共取代BaSm2Ti4O12陶瓷介电性能的改善","authors":"Jialing Xu, Haofeng Jing, Xiong Hou, Hengheng Feng, Hongtao Yu","doi":"10.1007/s10854-024-13974-7","DOIUrl":null,"url":null,"abstract":"<div><p>For capacitor applications, Ba(Sm<sub>1-<i>x</i>-<i>y</i></sub>La<sub><i>x</i></sub>Bi<sub><i>y</i></sub>)<sub>2</sub>Ti<sub>4</sub>O<sub>12</sub> dielectric ceramics with La/Bi co-substitution for Sm were prepared using the conventional solid-state method. Part of Sm<sup>3+</sup> was found to be replaced by La<sup>3+</sup> and Bi<sup>3+</sup> in ceramics that exhibit an orthorhombic tungsten bronze structure. As the concentration of Bi<sup>3+</sup> increased, a second phase of Bi<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub> was observed. The co-substitutions could reduce the sintering temperature and effectively increase the dielectric constant from 80 to 140. The dielectric loss increased slightly with increasing La<sup>3+</sup> and Bi<sup>3+</sup>, but it still remained below 0.1% at 1 kHz. After sintering, a specific composition was achieved with <i>x</i> = 0.1 and <i>y</i> = 0.4. It has a high dielectric constant of 132, an ultra-low dielectric loss of approximately 0.06%, and excellent frequency stability. Additionally, it exhibits a capacitance-temperature change of ± 1% at 1 kHz over a temperature range of − 55 to 125 °C.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"35 34","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2024-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Improvement of dielectric properties of La/Bi co-substituted BaSm2Ti4O12 ceramic for capacitor application\",\"authors\":\"Jialing Xu, Haofeng Jing, Xiong Hou, Hengheng Feng, Hongtao Yu\",\"doi\":\"10.1007/s10854-024-13974-7\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>For capacitor applications, Ba(Sm<sub>1-<i>x</i>-<i>y</i></sub>La<sub><i>x</i></sub>Bi<sub><i>y</i></sub>)<sub>2</sub>Ti<sub>4</sub>O<sub>12</sub> dielectric ceramics with La/Bi co-substitution for Sm were prepared using the conventional solid-state method. Part of Sm<sup>3+</sup> was found to be replaced by La<sup>3+</sup> and Bi<sup>3+</sup> in ceramics that exhibit an orthorhombic tungsten bronze structure. As the concentration of Bi<sup>3+</sup> increased, a second phase of Bi<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub> was observed. The co-substitutions could reduce the sintering temperature and effectively increase the dielectric constant from 80 to 140. The dielectric loss increased slightly with increasing La<sup>3+</sup> and Bi<sup>3+</sup>, but it still remained below 0.1% at 1 kHz. After sintering, a specific composition was achieved with <i>x</i> = 0.1 and <i>y</i> = 0.4. It has a high dielectric constant of 132, an ultra-low dielectric loss of approximately 0.06%, and excellent frequency stability. Additionally, it exhibits a capacitance-temperature change of ± 1% at 1 kHz over a temperature range of − 55 to 125 °C.</p></div>\",\"PeriodicalId\":646,\"journal\":{\"name\":\"Journal of Materials Science: Materials in Electronics\",\"volume\":\"35 34\",\"pages\":\"\"},\"PeriodicalIF\":2.8000,\"publicationDate\":\"2024-12-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Materials Science: Materials in Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s10854-024-13974-7\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-024-13974-7","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
摘要
在电容器方面,采用传统的固态方法制备了La/Bi共取代Sm的Ba(Sm1-x-yLaxBiy)2Ti4O12介电陶瓷。在具有正交钨青铜结构的陶瓷中,发现部分Sm3+被La3+和Bi3+所取代。随着Bi3+浓度的增加,出现了第二相Bi4Ti3O12。共取代可以降低烧结温度,有效地将介电常数从80提高到140。随着La3+和Bi3+的增加,介质损耗略有增加,但在1 kHz时仍保持在0.1%以下。烧结后,得到了x = 0.1, y = 0.4的特定成分。它具有132的高介电常数,约0.06%的超低介电损耗和优异的频率稳定性。此外,在- 55至125°C的温度范围内,在1 kHz时,它的电容温度变化为±1%。
Improvement of dielectric properties of La/Bi co-substituted BaSm2Ti4O12 ceramic for capacitor application
For capacitor applications, Ba(Sm1-x-yLaxBiy)2Ti4O12 dielectric ceramics with La/Bi co-substitution for Sm were prepared using the conventional solid-state method. Part of Sm3+ was found to be replaced by La3+ and Bi3+ in ceramics that exhibit an orthorhombic tungsten bronze structure. As the concentration of Bi3+ increased, a second phase of Bi4Ti3O12 was observed. The co-substitutions could reduce the sintering temperature and effectively increase the dielectric constant from 80 to 140. The dielectric loss increased slightly with increasing La3+ and Bi3+, but it still remained below 0.1% at 1 kHz. After sintering, a specific composition was achieved with x = 0.1 and y = 0.4. It has a high dielectric constant of 132, an ultra-low dielectric loss of approximately 0.06%, and excellent frequency stability. Additionally, it exhibits a capacitance-temperature change of ± 1% at 1 kHz over a temperature range of − 55 to 125 °C.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.