压力下立方GdAlO3钙钛矿的性质:密度泛函理论和蒙特卡罗模拟

IF 2.2 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Bilal Aladerah, Abeer Alrousan, Abdalla Obeidat, Abdullah Al-Sharif
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引用次数: 0

摘要

本研究利用密度泛函理论(DFT)和蒙特卡罗(MC)模拟研究了外部静水压力对立方GdAlO3的机械、电子和磁性能的影响。力学上,随着压力的增加,可以观察到GdAlO3的弹性常数C12、C11和C44以及体积模量、杨氏模量和剪切模量有相当大的增加。这表明在压力增加时刚度和抗变形能力增强。带隙显示出压力的显著增加,这对于调整特定电子器件的电子特性具有潜在的应用价值。此外,在压力变化下观察到稳定的总磁矩,Gd-Gd对的交换相互作用参数增加,表明铁磁有序性更强。此外,蒙特卡罗模拟显示,居里温度(TC)从0 GPa时的67K增加到90 GPa时的142K,表明磁性相互作用和压缩下的热弹性增强。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Properties of cubic GdAlO3 perovskite under pressure: density functional theory and Monte Carlo simulations

This study investigates the influence of external hydrostatic pressure on the mechanical, electronic, and magnetic properties of cubic GdAlO3 using density functional theory (DFT) and Monte Carlo (MC) simulations. Mechanically, upon pressure increase, a sizable increase in the elastic constants C12, C11, and C44, as well as in bulk, Young's, and shear moduli of GdAlO3, is observed. This indicates an enhanced stiffness and resistance to deformation upon pressure increase. The band gap shows a notable increase in pressure, which is useful in tuning the electronic properties of specific electronic devices for potential applications. In addition, a stable overall magnetic moment is observed under pressure variation, with increased exchange interaction parameters for Gd-Gd pairs, indicating more robust ferromagnetic ordering. Furthermore, the Monte Carlo simulation revealed increased Curie temperature (TC) from 67K at 0 GPa to 142K at 90 GPa, underscoring strengthened magnetic interactions and thermal resilience under compression.

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来源期刊
Journal of Computational Electronics
Journal of Computational Electronics ENGINEERING, ELECTRICAL & ELECTRONIC-PHYSICS, APPLIED
CiteScore
4.50
自引率
4.80%
发文量
142
审稿时长
>12 weeks
期刊介绍: he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered. In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.
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