{"title":"非晶铜镓氧化物扩展门场效应晶体管pH传感器","authors":"You-En Dai;An-Ting Zheng;Jei-Li Hou;Ting-Jen Hsueh","doi":"10.1109/JSEN.2024.3476452","DOIUrl":null,"url":null,"abstract":"The structural characteristics and the sensitivity of copper gallium oxide (CGO) extended gate field-effect transistor (EGFET) pH sensors were investigated in this study. An amorphous CGO thin film was synthesized by co-sputtering Cu and Ga2O3 targets, ensuring uniform composition throughout the film. The voltage sensitivity was found to be 51 mV/pH with an excellent linearity of approximately 99.59%, and the current sensitivity was \n<inline-formula> <tex-math>$80~\\mu $ </tex-math></inline-formula>\nA\n<inline-formula> <tex-math>$^{\\text {1/2}}$ </tex-math></inline-formula>\n/pH with a linearity of around 99.1%. The sensor demonstrated good linearity and stability across a pH range from 2 to 10. The net hysteresis value of the sensor was approximately 0.003 V. These results indicate that CGO-based EGFETs are promising candidates for reliable and high-performance pH sensing.","PeriodicalId":447,"journal":{"name":"IEEE Sensors Journal","volume":"24 23","pages":"38693-38698"},"PeriodicalIF":4.3000,"publicationDate":"2024-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Amorphous Copper Gallium Oxide Extended Gate Field-Effect Transistor pH Sensor\",\"authors\":\"You-En Dai;An-Ting Zheng;Jei-Li Hou;Ting-Jen Hsueh\",\"doi\":\"10.1109/JSEN.2024.3476452\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The structural characteristics and the sensitivity of copper gallium oxide (CGO) extended gate field-effect transistor (EGFET) pH sensors were investigated in this study. An amorphous CGO thin film was synthesized by co-sputtering Cu and Ga2O3 targets, ensuring uniform composition throughout the film. The voltage sensitivity was found to be 51 mV/pH with an excellent linearity of approximately 99.59%, and the current sensitivity was \\n<inline-formula> <tex-math>$80~\\\\mu $ </tex-math></inline-formula>\\nA\\n<inline-formula> <tex-math>$^{\\\\text {1/2}}$ </tex-math></inline-formula>\\n/pH with a linearity of around 99.1%. The sensor demonstrated good linearity and stability across a pH range from 2 to 10. The net hysteresis value of the sensor was approximately 0.003 V. These results indicate that CGO-based EGFETs are promising candidates for reliable and high-performance pH sensing.\",\"PeriodicalId\":447,\"journal\":{\"name\":\"IEEE Sensors Journal\",\"volume\":\"24 23\",\"pages\":\"38693-38698\"},\"PeriodicalIF\":4.3000,\"publicationDate\":\"2024-10-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Sensors Journal\",\"FirstCategoryId\":\"103\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10716554/\",\"RegionNum\":2,\"RegionCategory\":\"综合性期刊\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Sensors Journal","FirstCategoryId":"103","ListUrlMain":"https://ieeexplore.ieee.org/document/10716554/","RegionNum":2,"RegionCategory":"综合性期刊","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
摘要
研究了氧化铜镓(CGO)扩展栅场效应晶体管(EGFET) pH传感器的结构特性和灵敏度。采用Cu和Ga2O3靶材共溅射法制备了CGO非晶薄膜,保证了薄膜的均匀组成。电压灵敏度为51 mV/pH,线性度约为99.59%;电流灵敏度为$80~\mu $ A $^{\text {1/2}}$ /pH,线性度约为99.1%。该传感器在2到10的pH范围内表现出良好的线性和稳定性。传感器的净迟滞值约为0.003 V。这些结果表明,基于cgo的egfet是可靠和高性能pH传感的有希望的候选者。
The structural characteristics and the sensitivity of copper gallium oxide (CGO) extended gate field-effect transistor (EGFET) pH sensors were investigated in this study. An amorphous CGO thin film was synthesized by co-sputtering Cu and Ga2O3 targets, ensuring uniform composition throughout the film. The voltage sensitivity was found to be 51 mV/pH with an excellent linearity of approximately 99.59%, and the current sensitivity was
$80~\mu $
A
$^{\text {1/2}}$
/pH with a linearity of around 99.1%. The sensor demonstrated good linearity and stability across a pH range from 2 to 10. The net hysteresis value of the sensor was approximately 0.003 V. These results indicate that CGO-based EGFETs are promising candidates for reliable and high-performance pH sensing.
期刊介绍:
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