用于光电应用的 MgBiFeTiO6 双包晶石的结构、电学和多铁性研究

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Lutu Sahoo, Shubhashree Sahoo, Subhashree Mishra, Nimai C. Nayak, B. N. Parida, R. K. Parida
{"title":"用于光电应用的 MgBiFeTiO6 双包晶石的结构、电学和多铁性研究","authors":"Lutu Sahoo,&nbsp;Shubhashree Sahoo,&nbsp;Subhashree Mishra,&nbsp;Nimai C. Nayak,&nbsp;B. N. Parida,&nbsp;R. K. Parida","doi":"10.1007/s10854-024-13867-9","DOIUrl":null,"url":null,"abstract":"<div><p>Solid-state synthesis process with a higher thermal treatment of optimized sintering temperature of 1000 °C was utilized to develop the MgBiFeTiO<sub>6</sub> (MBFTO) orthorhombic (A21am) single-phase polycrystalline ceramic oxide. The initial investigation by the XRD method suggests an Aurivillius-type compound like A<sub>m-1</sub>B<sub>m</sub>O<sub>3m</sub>, <i>m</i> = 5, while Rietveld analysis and tolerance factor (<i>τ</i> ~ 0.8) were also involved as an additional approximation tools to verify the structural formation. The SEM image confirmed a single-phase polycrystalline compound formation with av. grain size (~ 0.614 μm) is greater as compared to mean crystallites (~ 11 nm). The EDS spectra and elemental color mapping suggest the purity and uniform distribution of essential element over the surface of the sample. The ultraviolet–visible (UV–vis) absorbance spectra have a higher threshold wavelength (~ 630 nm) with a direct bandgap of ~ 2.36 eV suggesting better absorbance features in IR and visible radiation range, thus it can be utilized as a source material in photovoltaic and photocatalytic applications. The electrical and transport property was examined over 25–500 °C with a frequency sweeping 100–5 M Hz. The compound possesses an average ambient dielectric (~ 433) and low loss (~ 0.071) value at 1 kHz. The contribution of grains and grain barriers effect in semiconductance essence while an out of Debye-based relaxation mechanism that relies on the heat-dependent carrier mobility were verified as well. The material exhibited weak ferromagnetic behaviour and non-zero electric polarisation, with antiferromagnetic behaviour predominating. The outcomes of the examination suggest the present sample can be used in photocatalytic and dielectric material in suitable electronic equipments.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"35 34","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2024-11-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Structural, electrical, and multiferroic investigations of MgBiFeTiO6 double perovskite for possible optoelectronic applications\",\"authors\":\"Lutu Sahoo,&nbsp;Shubhashree Sahoo,&nbsp;Subhashree Mishra,&nbsp;Nimai C. Nayak,&nbsp;B. N. Parida,&nbsp;R. K. Parida\",\"doi\":\"10.1007/s10854-024-13867-9\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Solid-state synthesis process with a higher thermal treatment of optimized sintering temperature of 1000 °C was utilized to develop the MgBiFeTiO<sub>6</sub> (MBFTO) orthorhombic (A21am) single-phase polycrystalline ceramic oxide. The initial investigation by the XRD method suggests an Aurivillius-type compound like A<sub>m-1</sub>B<sub>m</sub>O<sub>3m</sub>, <i>m</i> = 5, while Rietveld analysis and tolerance factor (<i>τ</i> ~ 0.8) were also involved as an additional approximation tools to verify the structural formation. The SEM image confirmed a single-phase polycrystalline compound formation with av. grain size (~ 0.614 μm) is greater as compared to mean crystallites (~ 11 nm). The EDS spectra and elemental color mapping suggest the purity and uniform distribution of essential element over the surface of the sample. The ultraviolet–visible (UV–vis) absorbance spectra have a higher threshold wavelength (~ 630 nm) with a direct bandgap of ~ 2.36 eV suggesting better absorbance features in IR and visible radiation range, thus it can be utilized as a source material in photovoltaic and photocatalytic applications. The electrical and transport property was examined over 25–500 °C with a frequency sweeping 100–5 M Hz. The compound possesses an average ambient dielectric (~ 433) and low loss (~ 0.071) value at 1 kHz. The contribution of grains and grain barriers effect in semiconductance essence while an out of Debye-based relaxation mechanism that relies on the heat-dependent carrier mobility were verified as well. The material exhibited weak ferromagnetic behaviour and non-zero electric polarisation, with antiferromagnetic behaviour predominating. The outcomes of the examination suggest the present sample can be used in photocatalytic and dielectric material in suitable electronic equipments.</p></div>\",\"PeriodicalId\":646,\"journal\":{\"name\":\"Journal of Materials Science: Materials in Electronics\",\"volume\":\"35 34\",\"pages\":\"\"},\"PeriodicalIF\":2.8000,\"publicationDate\":\"2024-11-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Materials Science: Materials in Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s10854-024-13867-9\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-024-13867-9","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

摘要

采用固态合成工艺,并在 1000 °C 的优化烧结温度下进行了较高的热处理,从而制备出 MgBiFeTiO6 (MBFTO) 正方体(A21am)单相多晶氧化物陶瓷。XRD 方法的初步研究表明,这是一种类似于 Am-1BmO3m(m = 5)的 Aurivillius 型化合物,而 Rietveld 分析和公差系数(τ ~ 0.8)也被用作验证结构形成的额外近似工具。扫描电子显微镜图像证实了单相多晶化合物的形成,平均晶粒尺寸(约 0.614 微米)大于平均晶粒尺寸(约 11 纳米)。EDS 光谱和元素颜色图显示,样品表面的基本元素纯度高且分布均匀。紫外-可见(UV-vis)吸收光谱具有较高的阈值波长(约 630 nm)和约 2.36 eV 的直接带隙,表明在红外和可见辐射范围内具有更好的吸收特性,因此它可用作光伏和光催化应用中的源材料。在 25-500 °C 的温度范围内,以 100-5 M Hz 的频率对其电气和传输特性进行了检测。该化合物具有平均环境介电值(~ 433)和 1 kHz 时的低损耗值(~ 0.071)。晶粒和晶界势垒效应对半导体本质的贡献,以及依赖于热相关载流子迁移率的基于 Debye 的弛豫机制都得到了验证。该材料表现出弱铁磁性和非零电极化,其中反铁磁性占主导地位。研究结果表明,该样品可用于合适的电子设备中的光催化和介电材料。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Structural, electrical, and multiferroic investigations of MgBiFeTiO6 double perovskite for possible optoelectronic applications

Solid-state synthesis process with a higher thermal treatment of optimized sintering temperature of 1000 °C was utilized to develop the MgBiFeTiO6 (MBFTO) orthorhombic (A21am) single-phase polycrystalline ceramic oxide. The initial investigation by the XRD method suggests an Aurivillius-type compound like Am-1BmO3m, m = 5, while Rietveld analysis and tolerance factor (τ ~ 0.8) were also involved as an additional approximation tools to verify the structural formation. The SEM image confirmed a single-phase polycrystalline compound formation with av. grain size (~ 0.614 μm) is greater as compared to mean crystallites (~ 11 nm). The EDS spectra and elemental color mapping suggest the purity and uniform distribution of essential element over the surface of the sample. The ultraviolet–visible (UV–vis) absorbance spectra have a higher threshold wavelength (~ 630 nm) with a direct bandgap of ~ 2.36 eV suggesting better absorbance features in IR and visible radiation range, thus it can be utilized as a source material in photovoltaic and photocatalytic applications. The electrical and transport property was examined over 25–500 °C with a frequency sweeping 100–5 M Hz. The compound possesses an average ambient dielectric (~ 433) and low loss (~ 0.071) value at 1 kHz. The contribution of grains and grain barriers effect in semiconductance essence while an out of Debye-based relaxation mechanism that relies on the heat-dependent carrier mobility were verified as well. The material exhibited weak ferromagnetic behaviour and non-zero electric polarisation, with antiferromagnetic behaviour predominating. The outcomes of the examination suggest the present sample can be used in photocatalytic and dielectric material in suitable electronic equipments.

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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