大尺寸有机半导体单晶的空间限制垂直生长

IF 8.2 2区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY
Qing Zhang, Aiqing Fan, Minghui Li, Weijie Ma, Ziyi Han, Yongshuai Wang, Lin Li, Hong Meng, Dechao Geng, Wenping Hu
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引用次数: 0

摘要

有机半导体单晶(OSSC)因其高电荷迁移率和原子尺度的光滑表面而备受关注。然而,由于传统外延生长不可避免的缺陷和有限的生长速度,高质量制备大尺寸有机半导体单晶仍然具有挑战性。在这里,我们展示了一种名为 "面外微间距空气升华(OPMAS)"的空间限制策略,通过将严重依赖基底的异质外延生长模式彻底转变为不受基底影响的自发均质生长模式,在几分钟内就能垂直生长出毫米级的 OSSC。这种转变的内在驱动力被证明是表面能的变化,晶体的最大尺寸在热力学上取决于微空间的距离。事实证明,OPMAS 适用于制备各种典型有机半导体的单晶体。已进行的大量特性分析证明了由此制备的有机半导体单晶体的高质量和均匀性。此外,制备的 OSSC 的光响应高度依赖于照明强度,因此适用于高对比度莫尔斯编码过程,显示出约 3.3 的稳定开关比。这项工作为制备大尺寸 OSSC 提供了一个通用平台,推动了基础(光)电子学研究和广泛的实际应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Space-Confined Vertical Growth of Large-Size Organic Semiconductor Single Crystals

Space-Confined Vertical Growth of Large-Size Organic Semiconductor Single Crystals
Organic semiconductor single crystals (OSSCs) have garnered considerable attention because of their high charge mobility and atomic-scale smooth surface. However, their large-size high-quality preparation remains challenging due to the inevitable defects and limited growth speed brought by traditional epitaxial growth. Here, we demonstrate a space-confined strategy, named out-of-plane microspacing in-air sublimation (OPMAS), for growing vertically millimeter-sized OSSCs in several minutes by revolutionizing the heterogeneous epitaxial growth mode severely depending on substrates into a spontaneous homogeneous growth mode free from substrates. The intrinsic driven force of this transformation is proved to be the change of surface energy, and the maximum size of crystals is thermodynamically dependent on the distance of the microspace. OPMAS has been proven to be suitable for preparing single crystals of various typical organic semiconductors. Numerous characterizations have been conducted to prove the high quality and uniformity of the thus-produced OSSCs. In addition, the photoresponse of the prepared OSSCs is highly dependent on the illumination intensities, making it suitable for high-contrast Morse coding process, demonstrating a stable switch ratio of about 3.3. This work provides a universal platform for preparing large-sized OSSCs, advancing both fundamental (opto)electronic studies and a wide range of practical applications.
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来源期刊
ACS Applied Materials & Interfaces
ACS Applied Materials & Interfaces 工程技术-材料科学:综合
CiteScore
16.00
自引率
6.30%
发文量
4978
审稿时长
1.8 months
期刊介绍: ACS Applied Materials & Interfaces is a leading interdisciplinary journal that brings together chemists, engineers, physicists, and biologists to explore the development and utilization of newly-discovered materials and interfacial processes for specific applications. Our journal has experienced remarkable growth since its establishment in 2009, both in terms of the number of articles published and the impact of the research showcased. We are proud to foster a truly global community, with the majority of published articles originating from outside the United States, reflecting the rapid growth of applied research worldwide.
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