N. Urgun , S.O. Tan , A. Feizollahi Vahid , B. Avar , Ş. Altındal
{"title":"在金属-半导体界面之间沉积(N:DLC)薄膜的频率相关介电特性的有效性","authors":"N. Urgun , S.O. Tan , A. Feizollahi Vahid , B. Avar , Ş. Altındal","doi":"10.1016/j.physb.2024.416753","DOIUrl":null,"url":null,"abstract":"<div><div>Dielectric characterization of metal-interlayer-semiconductor (MIS) structures of N-doped Diamond-Like Carbon (N:DLC) film-coated interlayer is performed to assess their dielectric properties, AC electrical conductivity (<em>σ</em><sub><em>ac</em></sub>), and polarization mechanisms. The interlayer's structural analysis is performed using Scanning Electron Microscopy (SEM) and X-ray Photo-electron Spectroscopy (XPS). The in-phase and out-of-phase parts of the complex dielectric constant (<em>ε∗</em>), the complex electric modulus (<em>M∗</em>), the values of tangent loss (tanδ), and <em>σ</em><sub><em>ac</em></sub> are determined utilizing admittance-voltage (Y = 1/Z = G + jωC) measurements revealing that their strong sensitivity to voltage and frequency. Remarkably, a relative permittivity (<em>ε′</em>) of 407 at 1 kHz, 104 times higher than traditional SiO<sub>2</sub> insulators, is observed, suggesting a significantly enhanced electron density and energy storage capacity for ultracapacitors. The double logarithmic <em>σ</em><sub><em>ac</em></sub> vs <em>f</em> plot slope changes between 0.36 and 0.20 at strong accumulation. The intersection point in <em>σ</em><sub><em>ac</em></sub> implies a lack of free electrons at higher frequencies, suggesting an electron trapping or recombination process.</div></div>","PeriodicalId":20116,"journal":{"name":"Physica B-condensed Matter","volume":"698 ","pages":"Article 416753"},"PeriodicalIF":2.8000,"publicationDate":"2024-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Effectuality of frequency dependent dielectric characterization of (N:DLC) film deposition between the metal-semiconductor interface\",\"authors\":\"N. Urgun , S.O. Tan , A. Feizollahi Vahid , B. Avar , Ş. Altındal\",\"doi\":\"10.1016/j.physb.2024.416753\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>Dielectric characterization of metal-interlayer-semiconductor (MIS) structures of N-doped Diamond-Like Carbon (N:DLC) film-coated interlayer is performed to assess their dielectric properties, AC electrical conductivity (<em>σ</em><sub><em>ac</em></sub>), and polarization mechanisms. The interlayer's structural analysis is performed using Scanning Electron Microscopy (SEM) and X-ray Photo-electron Spectroscopy (XPS). The in-phase and out-of-phase parts of the complex dielectric constant (<em>ε∗</em>), the complex electric modulus (<em>M∗</em>), the values of tangent loss (tanδ), and <em>σ</em><sub><em>ac</em></sub> are determined utilizing admittance-voltage (Y = 1/Z = G + jωC) measurements revealing that their strong sensitivity to voltage and frequency. Remarkably, a relative permittivity (<em>ε′</em>) of 407 at 1 kHz, 104 times higher than traditional SiO<sub>2</sub> insulators, is observed, suggesting a significantly enhanced electron density and energy storage capacity for ultracapacitors. The double logarithmic <em>σ</em><sub><em>ac</em></sub> vs <em>f</em> plot slope changes between 0.36 and 0.20 at strong accumulation. The intersection point in <em>σ</em><sub><em>ac</em></sub> implies a lack of free electrons at higher frequencies, suggesting an electron trapping or recombination process.</div></div>\",\"PeriodicalId\":20116,\"journal\":{\"name\":\"Physica B-condensed Matter\",\"volume\":\"698 \",\"pages\":\"Article 416753\"},\"PeriodicalIF\":2.8000,\"publicationDate\":\"2024-11-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Physica B-condensed Matter\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0921452624010949\",\"RegionNum\":3,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"PHYSICS, CONDENSED MATTER\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Physica B-condensed Matter","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0921452624010949","RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
引用次数: 0
摘要
对掺杂 N 的类金刚石碳(N:DLC)薄膜涂层夹层的金属-夹层-半导体(MIS)结构进行了介电性能表征,以评估其介电性能、交流导电率(σac)和极化机制。使用扫描电子显微镜(SEM)和 X 射线光电子能谱(XPS)对中间膜的结构进行了分析。复介电常数(ε∗)的同相和非同相部分、复电模量(M∗)、正切损耗值(tanδ)和σac 是利用导纳-电压(Y = 1/Z = G + jωC)测量法确定的,显示出它们对电压和频率的高度敏感性。值得注意的是,1 kHz 时的相对介电常数(ε′)为 407,是传统二氧化硅绝缘体的 104 倍,这表明超级电容器的电子密度和储能能力显著增强。在强积累时,σac vs f 的双对数图斜率在 0.36 和 0.20 之间变化。σac的交点意味着在较高频率下缺乏自由电子,表明存在电子捕获或重组过程。
Effectuality of frequency dependent dielectric characterization of (N:DLC) film deposition between the metal-semiconductor interface
Dielectric characterization of metal-interlayer-semiconductor (MIS) structures of N-doped Diamond-Like Carbon (N:DLC) film-coated interlayer is performed to assess their dielectric properties, AC electrical conductivity (σac), and polarization mechanisms. The interlayer's structural analysis is performed using Scanning Electron Microscopy (SEM) and X-ray Photo-electron Spectroscopy (XPS). The in-phase and out-of-phase parts of the complex dielectric constant (ε∗), the complex electric modulus (M∗), the values of tangent loss (tanδ), and σac are determined utilizing admittance-voltage (Y = 1/Z = G + jωC) measurements revealing that their strong sensitivity to voltage and frequency. Remarkably, a relative permittivity (ε′) of 407 at 1 kHz, 104 times higher than traditional SiO2 insulators, is observed, suggesting a significantly enhanced electron density and energy storage capacity for ultracapacitors. The double logarithmic σac vs f plot slope changes between 0.36 and 0.20 at strong accumulation. The intersection point in σac implies a lack of free electrons at higher frequencies, suggesting an electron trapping or recombination process.
期刊介绍:
Physica B: Condensed Matter comprises all condensed matter and material physics that involve theoretical, computational and experimental work.
Papers should contain further developments and a proper discussion on the physics of experimental or theoretical results in one of the following areas:
-Magnetism
-Materials physics
-Nanostructures and nanomaterials
-Optics and optical materials
-Quantum materials
-Semiconductors
-Strongly correlated systems
-Superconductivity
-Surfaces and interfaces