Exploration of the normalized intradopant transition energy of GaAs quantum dot under the influence of noise

In this work the intradopant transition energy (IDTE) and the normalized intradopant transition energy (NIDTE) of GaAs quantum dot (QD) have been minutely explored. The QD contains Gaussian impurity as dopant. Gaussian white noise, applied via two different routes (additive and multiplicative), also becomes part of the QD confinement potential. Energy values are calculated using linear variational theory. The IDTE and NIDTE exhibit (depending on presence/absence of noise, mode of entrance of noise and the given physical parameter undergoing change) steady growth, steady fall, maximization, minimization and saturation. Throughout the entire study, the NIDTE plots efficiently highlight some weak features which IDTE plots fail to do and clearly announce their superiority over the IDTE plots in realizing the influences of various physical parameters. The findings of the study are expected to be quite relevant in elucidating the optical properties of low-dimensional nanostructures containing impurity and under the sway of noise.