Yuqiang Li , Yuyao Liu , Qiang Zhang , Chuanzhen Zhao , Jinlu Sun , Yuhong Li , Yang Liu , Pingfan Ning , Yi Liu , Haiying Xing
{"title":"高压下拓扑绝缘体 As2Te3 的电输运特性","authors":"Yuqiang Li , Yuyao Liu , Qiang Zhang , Chuanzhen Zhao , Jinlu Sun , Yuhong Li , Yang Liu , Pingfan Ning , Yi Liu , Haiying Xing","doi":"10.1016/j.physb.2024.416757","DOIUrl":null,"url":null,"abstract":"<div><div>The electrical transport properties of As<sub>2</sub>Te<sub>3</sub> were studied under high pressure using theoretical and experimental methods. The structural phase transition was observed at around 25 GPa using first-principles calculations, which was reflected in the collapse of the cell volume and the calculation of the enthalpy. The pressure-induced metallization was confirmed at approximately 7 GPa from closed energy bands and density of states, and the resistivity of variable temperature also shown a piece of evidence for metallization at 7.1 GPa. The curves of the electrical parameters at 7 GPa are consistent with the theoretical calculations. In addition, discontinuous changes in carrier parameters were observed at around 15 GPa, which is attributed to the isostructural phase transition of As<sub>2</sub>Te<sub>3</sub>. Studying the electrical transport properties of As<sub>2</sub>Te<sub>3</sub> under high pressure, especially its pressure-induced metallization properties, can provide a theoretical basis for its application in storage devices and thermoelectric materials, and help to understand the properties of other A<sub>2</sub>B<sub>3</sub>-type compounds under high pressure.</div></div>","PeriodicalId":20116,"journal":{"name":"Physica B-condensed Matter","volume":"698 ","pages":"Article 416757"},"PeriodicalIF":2.8000,"publicationDate":"2024-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Electrical transport properties of topological insulator As2Te3 under high pressure\",\"authors\":\"Yuqiang Li , Yuyao Liu , Qiang Zhang , Chuanzhen Zhao , Jinlu Sun , Yuhong Li , Yang Liu , Pingfan Ning , Yi Liu , Haiying Xing\",\"doi\":\"10.1016/j.physb.2024.416757\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>The electrical transport properties of As<sub>2</sub>Te<sub>3</sub> were studied under high pressure using theoretical and experimental methods. The structural phase transition was observed at around 25 GPa using first-principles calculations, which was reflected in the collapse of the cell volume and the calculation of the enthalpy. The pressure-induced metallization was confirmed at approximately 7 GPa from closed energy bands and density of states, and the resistivity of variable temperature also shown a piece of evidence for metallization at 7.1 GPa. The curves of the electrical parameters at 7 GPa are consistent with the theoretical calculations. In addition, discontinuous changes in carrier parameters were observed at around 15 GPa, which is attributed to the isostructural phase transition of As<sub>2</sub>Te<sub>3</sub>. Studying the electrical transport properties of As<sub>2</sub>Te<sub>3</sub> under high pressure, especially its pressure-induced metallization properties, can provide a theoretical basis for its application in storage devices and thermoelectric materials, and help to understand the properties of other A<sub>2</sub>B<sub>3</sub>-type compounds under high pressure.</div></div>\",\"PeriodicalId\":20116,\"journal\":{\"name\":\"Physica B-condensed Matter\",\"volume\":\"698 \",\"pages\":\"Article 416757\"},\"PeriodicalIF\":2.8000,\"publicationDate\":\"2024-11-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Physica B-condensed Matter\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0921452624010986\",\"RegionNum\":3,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"PHYSICS, CONDENSED MATTER\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Physica B-condensed Matter","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0921452624010986","RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
Electrical transport properties of topological insulator As2Te3 under high pressure
The electrical transport properties of As2Te3 were studied under high pressure using theoretical and experimental methods. The structural phase transition was observed at around 25 GPa using first-principles calculations, which was reflected in the collapse of the cell volume and the calculation of the enthalpy. The pressure-induced metallization was confirmed at approximately 7 GPa from closed energy bands and density of states, and the resistivity of variable temperature also shown a piece of evidence for metallization at 7.1 GPa. The curves of the electrical parameters at 7 GPa are consistent with the theoretical calculations. In addition, discontinuous changes in carrier parameters were observed at around 15 GPa, which is attributed to the isostructural phase transition of As2Te3. Studying the electrical transport properties of As2Te3 under high pressure, especially its pressure-induced metallization properties, can provide a theoretical basis for its application in storage devices and thermoelectric materials, and help to understand the properties of other A2B3-type compounds under high pressure.
期刊介绍:
Physica B: Condensed Matter comprises all condensed matter and material physics that involve theoretical, computational and experimental work.
Papers should contain further developments and a proper discussion on the physics of experimental or theoretical results in one of the following areas:
-Magnetism
-Materials physics
-Nanostructures and nanomaterials
-Optics and optical materials
-Quantum materials
-Semiconductors
-Strongly correlated systems
-Superconductivity
-Surfaces and interfaces