{"title":"与 BEOL 工艺兼容的亚 6 纳米铁电 Hf0.5Zr0.5O2/ZrO2/Hf0.5Zr0.5O2 叠层薄膜的铁电性和可靠性得到增强","authors":"Yinchi Liu, Jining Yang, Hao Zhang, Dmitriy Anatolyevich Golosov, Chenjie Gu, Xiaohan Wu, Hongliang Lu, Lin Chen, Shijin Ding and Wenjun Liu*, ","doi":"10.1021/acsaelm.4c0174510.1021/acsaelm.4c01745","DOIUrl":null,"url":null,"abstract":"<p >In this work, the back-end of line (BEOL) compatible sub-6 nm Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>/ZrO<sub>2</sub>/Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> (HZO/ZrO<sub>2</sub>/HZO) stack and the corresponding capacitors were fabricated. The capacitor with the sub-6 nm HZO/ZrO<sub>2</sub>/HZO stack annealed at 400 °C shows a superior remanent polarization (2<i>P</i><sub>r</sub>) of 26.3 μC/cm<sup>2</sup> under only ±1.25 V sweeping, while the conventional HZO film presents nonferroelectricity. The enhanced ferroelectricity stems from the increased ferroelectric phase proportion with ZrO<sub>2</sub> insertion. Moreover, the capacitor with a HZO/ZrO<sub>2</sub>/HZO stack also achieved an excellent endurance with a 2<i>P</i><sub>r</sub> of 27.1 μC/cm<sup>2</sup> after 10<sup>11</sup> cycles without breakdown and only ∼12% 2<i>P</i><sub>r</sub> degradation at 85 °C. The robust reliability is ascribed to the suppressed generation of defects and domain pinning under the low operating voltage. The sub-6 nm HZO/ZrO<sub>2</sub>/HZO stack presents great potential for BEOL compatible nonvolatile memories in advanced process nodes.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"6 11","pages":"8507–8512 8507–8512"},"PeriodicalIF":4.3000,"publicationDate":"2024-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Enhanced Ferroelectricity and Reliability in Sub-6 nm Ferroelectric Hf0.5Zr0.5O2/ZrO2/Hf0.5Zr0.5O2 Stack Film Compatible with BEOL Process\",\"authors\":\"Yinchi Liu, Jining Yang, Hao Zhang, Dmitriy Anatolyevich Golosov, Chenjie Gu, Xiaohan Wu, Hongliang Lu, Lin Chen, Shijin Ding and Wenjun Liu*, \",\"doi\":\"10.1021/acsaelm.4c0174510.1021/acsaelm.4c01745\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p >In this work, the back-end of line (BEOL) compatible sub-6 nm Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>/ZrO<sub>2</sub>/Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> (HZO/ZrO<sub>2</sub>/HZO) stack and the corresponding capacitors were fabricated. The capacitor with the sub-6 nm HZO/ZrO<sub>2</sub>/HZO stack annealed at 400 °C shows a superior remanent polarization (2<i>P</i><sub>r</sub>) of 26.3 μC/cm<sup>2</sup> under only ±1.25 V sweeping, while the conventional HZO film presents nonferroelectricity. The enhanced ferroelectricity stems from the increased ferroelectric phase proportion with ZrO<sub>2</sub> insertion. Moreover, the capacitor with a HZO/ZrO<sub>2</sub>/HZO stack also achieved an excellent endurance with a 2<i>P</i><sub>r</sub> of 27.1 μC/cm<sup>2</sup> after 10<sup>11</sup> cycles without breakdown and only ∼12% 2<i>P</i><sub>r</sub> degradation at 85 °C. The robust reliability is ascribed to the suppressed generation of defects and domain pinning under the low operating voltage. The sub-6 nm HZO/ZrO<sub>2</sub>/HZO stack presents great potential for BEOL compatible nonvolatile memories in advanced process nodes.</p>\",\"PeriodicalId\":3,\"journal\":{\"name\":\"ACS Applied Electronic Materials\",\"volume\":\"6 11\",\"pages\":\"8507–8512 8507–8512\"},\"PeriodicalIF\":4.3000,\"publicationDate\":\"2024-11-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ACS Applied Electronic Materials\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://pubs.acs.org/doi/10.1021/acsaelm.4c01745\",\"RegionNum\":3,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ACS Applied Electronic Materials","FirstCategoryId":"88","ListUrlMain":"https://pubs.acs.org/doi/10.1021/acsaelm.4c01745","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Enhanced Ferroelectricity and Reliability in Sub-6 nm Ferroelectric Hf0.5Zr0.5O2/ZrO2/Hf0.5Zr0.5O2 Stack Film Compatible with BEOL Process
In this work, the back-end of line (BEOL) compatible sub-6 nm Hf0.5Zr0.5O2/ZrO2/Hf0.5Zr0.5O2 (HZO/ZrO2/HZO) stack and the corresponding capacitors were fabricated. The capacitor with the sub-6 nm HZO/ZrO2/HZO stack annealed at 400 °C shows a superior remanent polarization (2Pr) of 26.3 μC/cm2 under only ±1.25 V sweeping, while the conventional HZO film presents nonferroelectricity. The enhanced ferroelectricity stems from the increased ferroelectric phase proportion with ZrO2 insertion. Moreover, the capacitor with a HZO/ZrO2/HZO stack also achieved an excellent endurance with a 2Pr of 27.1 μC/cm2 after 1011 cycles without breakdown and only ∼12% 2Pr degradation at 85 °C. The robust reliability is ascribed to the suppressed generation of defects and domain pinning under the low operating voltage. The sub-6 nm HZO/ZrO2/HZO stack presents great potential for BEOL compatible nonvolatile memories in advanced process nodes.
期刊介绍：
ACS Applied Electronic Materials is an interdisciplinary journal publishing original research covering all aspects of electronic materials. The journal is devoted to reports of new and original experimental and theoretical research of an applied nature that integrate knowledge in the areas of materials science, engineering, optics, physics, and chemistry into important applications of electronic materials. Sample research topics that span the journal's scope are inorganic, organic, ionic and polymeric materials with properties that include conducting, semiconducting, superconducting, insulating, dielectric, magnetic, optoelectronic, piezoelectric, ferroelectric and thermoelectric.
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