{"title":"低温烧结 BaNb2V2O11 陶瓷中的高κ和大正τf","authors":"Chia-Chien Wu, Cheng-Liang Huang","doi":"10.1007/s10854-024-13902-9","DOIUrl":null,"url":null,"abstract":"<div><p>The BaNb<sub>2</sub>V<sub>2</sub>O<sub>11</sub> microwave dielectric material, synthesized using a solid-state process, was proposed for utilization as a temperature compensator in LTCC applications. XRD analysis indicated that all samples revealed a trigonal structure of the BaNb<sub>2</sub>V<sub>2</sub>O<sub>11</sub> phase with the R3̅m (166) space group. Influence of lattice energy and bond energy on the dielectric characteristics were investigated. Correlation between the Full Width at Half Maximum (FWHM) of the primary Raman peak at 917 cm⁻<sup>1</sup> and the <i>Q</i> × <i>f</i> value was also analyzed. The sample sintered at 860 °C exhibited remarkable microwave dielectric properties, including a high relative permittivity (<i>ε</i><sub><i>r</i></sub>) of 88.7, a high <i>Q</i> × <i>f</i> value of 2100 GHz, and a significantly positive temperature coefficient of resonant frequency (<i>τ</i><sub><i>f</i></sub>) of + 602.4 ppm/°C. This notably large positive <i>τ</i><sub><i>f</i></sub> value makes it an effective <i>τ</i><sub><i>f</i></sub> compensator. Furthermore, the high <i>ε</i><sub><i>r</i></sub> value indicates its suitability for use in decoupling devices or as dielectric resonators in 5G base stations.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"35 34","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2024-11-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"High κ and large positive τf in the low temperature sintering BaNb2V2O11 ceramics\",\"authors\":\"Chia-Chien Wu, Cheng-Liang Huang\",\"doi\":\"10.1007/s10854-024-13902-9\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>The BaNb<sub>2</sub>V<sub>2</sub>O<sub>11</sub> microwave dielectric material, synthesized using a solid-state process, was proposed for utilization as a temperature compensator in LTCC applications. XRD analysis indicated that all samples revealed a trigonal structure of the BaNb<sub>2</sub>V<sub>2</sub>O<sub>11</sub> phase with the R3̅m (166) space group. Influence of lattice energy and bond energy on the dielectric characteristics were investigated. Correlation between the Full Width at Half Maximum (FWHM) of the primary Raman peak at 917 cm⁻<sup>1</sup> and the <i>Q</i> × <i>f</i> value was also analyzed. The sample sintered at 860 °C exhibited remarkable microwave dielectric properties, including a high relative permittivity (<i>ε</i><sub><i>r</i></sub>) of 88.7, a high <i>Q</i> × <i>f</i> value of 2100 GHz, and a significantly positive temperature coefficient of resonant frequency (<i>τ</i><sub><i>f</i></sub>) of + 602.4 ppm/°C. This notably large positive <i>τ</i><sub><i>f</i></sub> value makes it an effective <i>τ</i><sub><i>f</i></sub> compensator. Furthermore, the high <i>ε</i><sub><i>r</i></sub> value indicates its suitability for use in decoupling devices or as dielectric resonators in 5G base stations.</p></div>\",\"PeriodicalId\":646,\"journal\":{\"name\":\"Journal of Materials Science: Materials in Electronics\",\"volume\":\"35 34\",\"pages\":\"\"},\"PeriodicalIF\":2.8000,\"publicationDate\":\"2024-11-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Materials Science: Materials in Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s10854-024-13902-9\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-024-13902-9","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
High κ and large positive τf in the low temperature sintering BaNb2V2O11 ceramics
The BaNb2V2O11 microwave dielectric material, synthesized using a solid-state process, was proposed for utilization as a temperature compensator in LTCC applications. XRD analysis indicated that all samples revealed a trigonal structure of the BaNb2V2O11 phase with the R3̅m (166) space group. Influence of lattice energy and bond energy on the dielectric characteristics were investigated. Correlation between the Full Width at Half Maximum (FWHM) of the primary Raman peak at 917 cm⁻1 and the Q × f value was also analyzed. The sample sintered at 860 °C exhibited remarkable microwave dielectric properties, including a high relative permittivity (εr) of 88.7, a high Q × f value of 2100 GHz, and a significantly positive temperature coefficient of resonant frequency (τf) of + 602.4 ppm/°C. This notably large positive τf value makes it an effective τf compensator. Furthermore, the high εr value indicates its suitability for use in decoupling devices or as dielectric resonators in 5G base stations.
期刊介绍：
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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