Fusheng Li, Lei Xu, Mingze Chen, Fuwen Zhang, Zhigang Wang, Xixue Liu, Huijun He
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Effects of Ga addition on the microstructure and mechanical performance of Sn-58Bi based alloys and the solder joints
In the research, 0.5 wt. % Ga were added in Sn-58Bi solder to investigate the effect of Ga addition on the microstructure and mechanical performance of Sn-58Bi based solders and corresponding solder joints. Elemental analysis of Ga-bearing bulk solder confirms the existence of solid solution Ga in β-Sn matrix and network α-Ga phase. The result of tensile test and post-test fracture surface analysis indicates that Ga addition improves the ultimate tensile strength, however, it depletes the plasticity by the precipitation of α-Ga phase with low melting point. With 0.5 wt. % Ga addition, the eutectic structure was much refined and the interfacial product changes from traditional scallop-like Cu6Sn5 layer to smooth Cu9Ga4 IMCs. In addition, the shear strength of Sn-58Bi solder joint was effectively improved by Ga addition due to the refinement strengthening of solder matrix and the improvement of interfacial IMC morphology. The shear fracture path changes from transgranular fracture in Cu6Sn5 layer to interfacial fracture between solder and Cu9Ga4 IMC layer.
期刊介绍：
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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