用于高性能电子和光电器件的栅极控制 InSe/PtS2 范德华异质结构

IF 4.3 3区 材料科学 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC
Muhammad Wajid Zulfiqar, Sobia Nisar, Ghulam Dastgeer*, Faisal Ghafoor, Muhammad Rabeel, Vijay D. Chavan, Ali Alsalme, Muhammad Zahir Iqbal, Iqra Rabani and Deok-kee Kim*, 
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引用次数: 0

摘要

二维(2D)半导体中的原子薄层和定义明确的界面的独特组合为电子学和光电子学的应用带来了希望。p 型 InSe 和 n 型 PtS2 纳米片是前景广阔的新成员,它们的独特特性带来了令人兴奋的可能性。在这里,我们研究了门控 InSe/PtS2 范德瓦耳斯异质结构(vdWHs),强调了它们作为先进电子和光电应用候选材料的潜力。这项工作展示了具有精确定义的原子界面的二维 p-n 二极管的实现,它表现出很强的层间相互作用。InSe/PtS2 vdWHs 具有令人印象深刻的功能,其栅极电压为 Vg = -20 V 时的栅极整流率为 1.5 × 105,理想度系数为 1.17,接近理想二极管,超过了之前报道的范德华二极管。对 InSe/PtS2 异质结构在不同光照强度下的光电响应进行研究后发现,在波长为 220 纳米的光照下,其响应率从 31.85 到 43.2 A/W 不等。此外,还实现了 2.4 × 104 % 的可观外部量子效率 (EQE),以及 7.06 × 109 Jones 的高检测率 (D*)。这项工作展示了先进 p-n 结的发展,为实现高性能电子和光电器件铺平了道路。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Gate-Controlled InSe/PtS2 van der Waals Heterostructures for High-Performance Electronic and Optoelectronic Devices

Gate-Controlled InSe/PtS2 van der Waals Heterostructures for High-Performance Electronic and Optoelectronic Devices

The unique combination of atomically thin layers and well-defined interfaces in two-dimensional (2D) semiconductors holds promise for applications in electronics and optoelectronics. As promising newcomers, p-type InSe and n-type PtS2 nanosheets present exciting possibilities, with their unique characteristics. Here, we investigate gate-controlled InSe/PtS2 van der Waals heterostructures (vdWHs), highlighting their potential as candidates for advanced electronic and optoelectronic applications. This work demonstrates the realization of a 2D p-n diode with a precisely defined atomic interface, exhibiting strong interlayer interactions. InSe/PtS2 vdWHs demonstrate impressive functionalities surpassing previously reported van der Waals counterparts with gate-dependent rectification of 1.5 × 105 at a gate voltage of Vg = −20 V and ideality factor of 1.17, close to an ideal diode. Investigating the photovoltaic response of the InSe/PtS2 heterostructure under varied light intensities revealed a significant responsivity that varies from 31.85 to 43.2 A/W upon exposure to a light wavelength of 220 nm. Additionally, a substantial external quantum efficiency (EQE) ratio of ∼2.4 × 104 % with high detectivity (D*) of 7.06 × 109 Jones values is achieved. This work demonstrates the development of advanced p-n junctions, paving the way for the realization of high-performance electronics and optoelectronic devices.

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来源期刊
CiteScore
7.20
自引率
4.30%
发文量
567
期刊介绍: ACS Applied Electronic Materials is an interdisciplinary journal publishing original research covering all aspects of electronic materials. The journal is devoted to reports of new and original experimental and theoretical research of an applied nature that integrate knowledge in the areas of materials science, engineering, optics, physics, and chemistry into important applications of electronic materials. Sample research topics that span the journal's scope are inorganic, organic, ionic and polymeric materials with properties that include conducting, semiconducting, superconducting, insulating, dielectric, magnetic, optoelectronic, piezoelectric, ferroelectric and thermoelectric. Indexed/​Abstracted: Web of Science SCIE Scopus CAS INSPEC Portico
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